| 2023 |
石墨烯熱摻雜的量子鋁棒特性之研究 |
| 2022 |
離散分數傅立葉轉換在浮水印的應用 |
| 2021 |
樹莓派家庭監控系統 |
| 2014 |
Optoelectronic characterization of Ta-doped ZnO thin films by pulsed laser deposition |
| 2013 |
The Side Effects on N-Type FinFET Devices |
| 2012 |
Enhancement on the Efficiency of Non-Contact Charging |
| 2012 |
0.18 微米製程5.2/5.8GHz 高增益與絕佳隔離之疊接式低雜訊放大器應用於射頻鑑別系統 |
| 2012 |
0.18 微米製程2.4GHz高輸出增益與低雜訊指數疊接式低雜訊放大器整合於RFID 晶片 |
| 2012 |
<100>矽基片奈米p型電晶體在單軸CESL應變下之汲極接面電位研究 |
| 2012 |
<100>矽基片奈米製程MOS電晶體在源/汲極回填矽壓縮應變下之汲極接面電位研究 |
| 2012 |
探討奈米製程CESL壓縮應變於<100>矽基片上p型電晶體之汲極接面電位 |
| 2012 |
重填矽源/汲極應變和CESL壓縮應變對奈米等級<100> nMOSFET之汲極接面電位研究 |
| 2012 |
CESL壓/拉應變對奈米等級<100>不同通道長度nMOSFETs之汲極接面電位研究 |
| 2012 |
奈米製程在單軸CESL拉伸應變於<100>晶圓表面上nMOSFET之汲極接面電位研究 |
| 2012 |
<110>矽基片45奈米電晶體在CESL應變與矽鍺回填源/汲極製程下之接面效能研究 |
| 2012 |
射頻鑑別系統中2.4GHz高增益/高隔離度串接式低雜訊放大器 |
| 2012 |
Determination of Threshold Voltages of PMOSFET Devices Using FinFET Structure |
| 2012 |
Threshold Voltages of MOSFET Devices Using 3-D FinFET Structure |
| 2012 |
Fin-Thickness Effects on p-Channel FinFET Devices |
| 2011 |
Distinguishing Repeatability of CESL Strained NMOSFET Devices Fabricated on <100> Substrate Associated with Junction Breakdown, and Punch-Through |
| 2011 |
Promising Reliability of Refilled S/D Strained N/PMOSFET Devices Fabricated on <100> Substrate Linked to Junction Breakdown, and Punch-Through |
| 2011 |
從「流於野」到「求諸野」—談客家飲食的野地翻身 |