一. SCI Papers
1. Hsin-Chia Yang, SungChing Chi, “Conclusive Model-Fit Current-Voltage Characteristic Curves with Kink Effects”, Applied Sciences, October, 2023,13, 12379
2. Hsin-Chia Yang, SungChing Chi, Wen-Shiang Liao, “Comparison of Fitting Current-Voltage Characteristics Curves of FinFET Transistors with Various Fixed Parameters”, Applied Sciences, October, 2022,12, 10519
3.Hsin-Chia Yang, SungChing Chi, “Optimized E-Class Power Amplifiers Widely Covering 4.5 GHz from 2.5 to 7.0 GHz”, Journal of Internet Technology, V23, No.4, July, 2022
4. Hsin-Chia Yang, SungChing Chi, “Process Corresponding Implications Associated with a Conclusive Model-Fit Current-Voltage Characteristics Curves”, Applied Sciences, January, 2022,12, 462
5. Hsin-Chia Yang, Jui-Ming Tsai, Tsin-Yuan Chang, Wen-Shiang Liao, SungChing Chi, “The Effects of Thickness of Source/Drain Fin on P-Channel FinFET Devices and the Corresponding Quantum Effects”, NanoScience and Nano-Technology Letters,
Volume 6, 2, pp165-169, Feb 2014
6. Mu-Chun Wang, Heng-Sheng Huang, Ming-Ru Peng, Shea-Jue Wang, Tsao-Yeh Chen, Weng-Shiang Liao, Hsin-Chia Yang, …etc. “Punch-Through and Junction Breakdown Characteristics for Uni-Axial Strained Nano-Node MOSFET on (100) Wafer”, International Journal of Material Product Technology, Vol 49, No.1, 2014
7. Szu-Hung Chen, Wen-Shiang Liao, Hsin-Chia Yang, etc, “High Performance III-V MOSFET with Nano-Stacked High k Gate Dielectric and 3D Fin-Shape Structure”, Nanoscale Research Letters,
Vol 7, 431, Aug.1, 2012
8. Mu-Chun Wang, Hsin-Chia Yang, Hong-Wen Hsu, Zhen-Ying Hsieh, Shuang-Yuan Chen, Shih-Ying Chang, and Chuan-His Liu, “Degradation Mechanism for Continuous-Wave Green Laser-crystallized Polycrystalline Silicon n-Channel Thin-Film Transistors under Low Vertical-Field Hot-Carrier Stress with Different Laser Annealing Powers”, Japanese Journal of Applied Physics (JJAP), (SCI IF 2009: 1.138) ISSN: 1347-4065, Nov., 2010.
9. Mu-Chun Wang, Chuan-Hsi Liu, Kuo-Shu Huang, Zhen-Ying Hsieh, Shuang-Yuan Chen, Hsin-Chia Yang, Chii-Ruey Lin, “Promoting of Charged-Device Model/Electrostatic Discharge Immunity in the Dicing Saw Process” Microelectronics Reliability, Vol. 50, Iss.6, pp.839-846, (SCI IF 2008: 1.29)
ISSN: 0026-2714, Mar, 2010.
10. Hsin-Chia Yang, Yi-Chang Cheng, “Low Effective SiO2 Thickness and Low Leakage Current Ta2O5 Capacitors Based on Tantalum Tetraethoxide Dimethylamino-Ethoxide Precursor”,
Japanese Journal of Applied Physics(SCI), ISSN:1347-4065, Vol.44, No.4A, April 2005, pp1711-1716
二 . 參考資料-專利發明
01.中華民國Patent No.發明I 745165電流參數計算方法2021/11/01
02.中華民國Patent No.發明I 736472電流參數計算方法2021/08/11
03.中華民國Patent No.發明I 525822半導體元件結構2016/03/11
04.中華民國Patent No.發明I 419330 功率電晶體結構 2013/12/11
05.中華民國Patent No.發明I 419330 電容量測校正方法2013/03/11
06.中華民國Patent No.發明I 381528半導體元件 2013/01/01
07.中國大陸 Patent No. ZL2013 1 0349646.6 半導體元件結構 2016/03/02
08.中國大陸 Patent No. ZL2009 1 0252766.8 功率電晶體結構 2012/07/04
09.中國大陸 Patent No. ZL2008 1 0177032.3 功率半導體元件 2010/06/09
10.中華民國 Patent No. 304120: 拋物線型微帶天線 2007/01/01
11.中華民國 Patent No. 303777: 施液器 2007/01/01
12.中華民國 Patent No.發明I 466633 氧化氮薄膜的蝕刻方法2001/12/01
13.中華民國 Patent No.發明I 466533 離子之即時監控裝置與方法2001/12/01
14.中華民國 Patent No.發明I 464898 高電流離子束產生裝置2001/11/21
15.中華民國 Patent No.發明I 463245 離子數據交調整裝置2001/11/11
16.中華民國 Patent No.發明I 461024 使用淡化材料作為超淺介面蓋層之方法2001/10/21
17.中華民國 Patent No.發明I 457588 熱氧化護層的製作方法2001/10/01
18.中華民國 Patent No.發明I 451311 電磁式質量解析系統2001/08/21
19.中華民國 Patent No.發明I 449803 以低溫同步蒸氣製成形成氧化材料之方法2001/08/11
20.中華民國 Patent No.發明I 449782 電漿沉浸系統之磁力瓶裝置2001/08/11
21.中華民國 Patent No.發明I 439109 離子束能量分析裝置與方法2001/04/24
22.中華民國 Patent No.發明I 432539 氮氧化矽之製程方法2001/05/01
23.中華民國 Patent No.發明I 426919 利用遠端微波源對閘氧化層進行低溫熱退火製程的方法2001/03/21
24.中華民國 Patent No.發明I 417208 金屬化合物介電材質之熱處理方法2001/01/01
三. EI Paper or IEEE Conference Paper
1. 1Hsin-Chia Yang, 1You-Sheng Lin, 1Zhe-Wei Lin, 1Tzu-Chien Chen, 1Sheng-Ping Wen, 1Chen-Yu Tsai, 1Kuan-Hung Chen, 1Pei-Jun Yang, 1Chia-Chun Lin, 1Chang-Ping Hsu, 1Chen-Chien Tsai, 2Yu-Tsung Liao, 1Sung-Ching Chi " Negative Fixed Threshold Voltage on NFinFET Current-Voltage Characteristics Curves”, Proceedings of the 2022 IEEE International Conference on Applied System Innovation, IEEE-ICACII 2022( ISBN:978-1-6654- 9650-6, EI)
2. 1Hsin-Chia Yang, 1Kuan-Hung Chen, 1Tzu-Chien Chen, 1Sheng-Ping Wen, 1Zhe-Wei Lin, 1Chen-Yu Tsai, 1You-Sheng Lin, 1Kuan-Hung Chen, 1Pei-Jun Yang, 1Chia-Chun Lin, 1Chang-Ping Hsu, 1Chen-Chien Tsai, 2Yu-Tsung Liao, 1Sung-Ching Chi " Current-Voltage Characteristics Curves with Fixed Kn”, Proceedings of the 2022 IEEE International Conference on Applied System Innovation, IEEE-ICACII 2022 (ISBN:978- 1-6654- 9650-6, EI)
3.Hsin-Chia Yang, Sung-Ching Chi,, Pei-Jun Yang, Chia-Chun Lin, Kuan-Hung Chen, You-Sheng Lin Promising Algorithm Addressing Characteristic Curves of Insulated Gated Bipolar Transistor (IGBT) Fitted by Applying Bipolar Transistor Driven by Insulated Gate Bias 7th IEEE International Conference on Applied System Innovation, IEEE-ICASI 2021 ( ISBN:978-1-6654- 4143 -8, EI)
4.Hsin-Chia Yang, Pei-Jun Yang, Chia-Chun Lin, Kuan-Hung Chen, You-Sheng Lin, Sung-Ching Chi Current-Voltage Characteristic Curves Addressing Non-Linear Kink-like Effects 7th IEEE International Conference on Applied System Innovation, IEEE-ICASI 2021 ( ISBN:978-1-6654-4143-8,EI)
5.Hsin-Chia Yang, Ming-Jun Weng, Yuan-Chou Shen, Yi-Syuan Lin, Min-Hsuan Yang, Yu-Tsung Liao, Sung-Ching Chi, " A Conclusive Algorithm to Model Fit Current Voltage Characteristics Curves of FinFET Transisitor”, 6th IEEE International Conference on Applied System Innovation, IEEE-ICASI 2020 ( ISBN:978-1-7281-7536-2,EI)
6.Hsin-Chia Yang, Yang-Ming Yang, Min-Hsuan Yang, Yi-Syuan Lin, Jia-Jun Lin, Rung Jin Chang, Han Ya Yang, Yu-Tsung Liao, Sung-Ching Chi, "A Conclusive Model-Fit Current-Voltage Characteristics Curves of FinFET Transisitors with Fin Width 120nm”, 6th IEEE International Conference on Applied System Innovation, IEEE-ICASI 2020 ( ISBN:978-1-7281-7536-2,EI)
7. Hsin-Chia Yang, Yi-Syuan Lin, Rung Jin Chang, Han Ya Yang, Sung Ching Chi," Electrical Performances of Insulated Gated Bipolar Transistor (IGBT) in Terms of Bipolar Transistor Driven by Insulated Gate Bias”, 6th IEEE International Conference on Applied System Innovation, IEEE-ICASI 2020 ( ISBN:978-1-7281-7536-2,EI)
8. Hsin-Chia Yang, Chi-Chan Li, Yuan-Chou Shen, Yi-Syuan Lin, Sung-Ching Chi, Yu-Tsung Liao, "Wide Band Low Noise Power Amplifiers covering 2.4 to 7.1GHz”, 6th IEEE International Conference on Applied System Innovation, IEEE-ICASI 2020 ( ISBN:978-1-7281-7536-2,EI)
9. Hsin-Chia Yang, Rui-Sheng Chen, Ya Yuan Yang, Chun-Kai Tseng, Chia-Juan Tsai, Jian-Jia Tseng, Sung-Ching Chi, 2Yu-Jung Liao " Electrical Performances of NFinFET and PFinFET Transistors Correlating Processing Conditions and Scales of the Fin Structure”, 8th IEEE International Conference on Innovation and CE, IEEE-ICICE 2019 ( First Prize Award, ISBN: 978-1-7281 -0110-1,EI)
10.Hsin-Chia Yang, Chia-Juan Tsai, Chun-Kai Tseng, Ya Yuan Yang, Rui-Sheng Chen, Jian-Jia Tseng, Sung-Ching Chi, 2Yu-Jung Liao" Temperature Effects on Electrical Performances of NFinFET Transistors with Channel Length 90 nanometer” 8th IEEE International Conference on Innovation and CE, IEEE-ICICE 2019 ( ISBN:978-1- 7281-0110-1,EI)
11. Hsin-Chia Yang, Kai-Hung Hsieh, Hsiu-Hsien Yu, Chun-Yian Chang, Kun-Hong Liao, Yu-Jung Liao, Sung-Ching Chi " An Alternative Algorithm to Fit All-Aspect Current-Voltage Characteristics Curves on FinFET Devices”, 2nd IEEE International Conference on Innovation and Invention, IEEE-ICKII 2019 ( ISBN:978-1-7281-0110-1,EI)
12.Hsin-Chia Yang, Kuo-Chin Lo, Hsiu-Hsien Yu, Chun-Yian Chang, Kun-Hong Liao, 2Yu-Jung Liao, Sung-Ching Ch" Electrical Performances of Insulated Gated Bipolar Transistor on Breakdown Voltage Corresponding to the Resulted Voltage due to the Applied Current Source”, 2nd IEEE International Conference on Innovation and Invention, IEEE-ICKII 2019 ( ISBN:978-1-7281-0110-1,EI)
13.Hsin-Chia Yang, Cheng-Cian Wang, Sung-Ching Chi, Yu-Jung Liao " Evaluation and analysis of the effect of an insulated gated bipolar transistor on the electrical performance of trans-conductance”, Proceedings of the 2018 IEEE International Conference on Innovation CE, IEEE-ICICE 2018 - Meen, Prior & Lam (Eds, EI)
14.Hsin-Chia Yang, Ting-Wei Lu, Tsin-Yuan Chang, Sung-Ching Chi ," The Comparisons between the Two Different Current-Voltage Characteristics Curves on FinFET Device”, Proceedings of the 2018 IEEE International Conference on Innovation CE
IEEE-ICICE 2018 - Meen, Prior & Lam (Eds, EI)
15.Hsin-Chia Yang,"Collective Quantum Behaviors in the Quantum Well Associated with the Strongly Inversed Channel",Proceedings of the 2017 IEEE International Conference on Applied System Innovation
IEEE-ICASI 2017 - Meen, Prior & Lam (Eds)
16.Hsin-Chia Yang, Ting-Wei Lu, Tsin-Yuan Chang, Sung-Ching Chi ,"The Variation of Threshold Voltages Associated with Various Applied Gate Voltages at Different Temperatures on FinFET Devices",Proceedings of the 2017 IEEE International Conference on Applied System Innovation (Best Conference Paper Award)
IEEE-ICASI 2017 - Meen, Prior & Lam (Eds)
17.Hsin-Chia Yang, Guan-Hao Shen “An Optimal Low Noise Power Amplifier of Ultra-High Gain Extensively Applicable from 2.1 to 5.1 GHz”, Proceedings of 2014 3rd Asia Pacific conference on Antenna and Propagation, 2014, ISSN: 9781-4799-4354
18.Hsin-Chia Yang, Jui-Ming Tsai, Tsin-Yuan Chang, SungChing Chi, “The Determination of Threshold Voltages on N-Channel Fin-FET Devices and the Associated Quantum Effects”, International Journal of Engineering Innovative Technology,
Vol. 3, Issue 5, Nov. 2013, ISSN: 2277-3754
19.Hsin-Chia Yang, Mu-Chun Wang, “Extensive 6.0 -18.0 GHz Frequency Low Noise Amplifiers Integrated to Form LC-Feedback Oscillators,” Advanced Materials Research (AMR), (ISSN: 1022-6680, EI), Apr., 2011
20.Hsin-Chia Yang, Mu-Chun Wang, “Evaluation of the Capacitances by Using High Frequency Roll-Off Fitting to the second order approximation”, Advanced Materials Research (AMR),
(ISSN: 1022-6680, EI), Feb., 2011
21.Hsin-Chia Yang, Evaluation of the Capacitances by Using High Frequency Roll-Off Fitting to the second order approximation,Advanced Materials Research (AMR), (ISSN: 1022-6680, EI), 2011
Vols.204-210
22.Hsin-Chia Yang, Min-Ru Peng, Wen-Shiang Liao, Mu-Chun Wang, Shuang-Yuan Chen, Heng-Sheng Huang, “Performance of Uni-axial Strained Nano-regime nMOSFETs with CESL Process on <100> Silicon Substrate,” 電子資訊---發光二極體磊晶生產設備專刊, 2011 (ISSN1996796-9), Jan, 2011
23.Hsin-Chia Yang, Ming-Der Chang, Mu-Chun Wang, Sungching Chi, Chuei-Tang Wang, “3.5 GHz to 10.0 GHz Mixers of High Gain and Good Isolation”, IEEE/ The 6th International Conference on Wireless Communications, Network and Mobile Computing (WiCOM 2011), Wuhan, China
(ISBN 978-1-6252-0) Sep., 2011
24.Hsin-Chia Yang, Wen-Shiang Liao, Min-Ru Peng, Mu-Chun Wang, Zhen-Ying Hsieh, Shuang-Yuan Chen, Heng-Sheng Huang, “Study of Temperature Effects of Mobility, Swing, and Early Voltages on Strained MOSFET Devices “, 4th 2011 IEEE International NanoElectronics Conference (ISBN 978-1-4577-0379-9) Mar., 2011
25.Hsin-Chia Yang, Kan-Tse Yeh, Ming-Der Chang, Sungching Chi, Shih-Chia Lin, Chuei-Tang Wang, “Study of Nano-regime Strained MOSFETs with Temperature Effect”, 2010 IEEE International Symposium on Next-Generation Electronics, pp. 186-189 , KaoHsiung, Taiwan
(ISBN 978-1-4244-6694-8), Nov. 2010
26.Hsin-Chia Yang, Ming-Der Chang, Kan-Tse Yeh, Sungching Chi, Mu-Chun Wang, Chuei-Tang Wang, “Promising 5.0-15.0 GHz LC Feedback Oscillators”, IEEE/ The 6th International Conference on Wireless Communications, Network and Mobile Computing (WiCOM 2010), Chengdu , China(ISBN 978-1-4244-3709-2) Sep., 2010,
27.Hsin-Chia Yang, “Determination of Capacitance of DRAM Capacitor as Encountering Roll-Off Problems,IEEE/ICEMI/2009
(ISBN 978-1-4244-3864-8), Aug., 2009
28.Hsin-Chia Yang, Shih-Chia Lin, Zhi-Guang Feng, Cheng-Yong Wang, Chingyei Chung, Chuei-Tang Wang, “Promising 6.0-12 GHz Low Noise Amplifiers by Combining Two Matched Amplifiers”, IEEE 5th International Conference on Wireless Communications, Networking and Mobile Computing(ISBN 978-1-4244-3693-4), Sep., 2009
29.Hsin-Chia Yang, Po-Yu Chen, Chuei-Tang Wang, “A 6.0 GHz Low Noise Amplifier and A 6.0 GHz E-Class Power Amplifier”, Electronic Devices and Solid Circuits, 2007, IEEE Conference
(ISBN 978-1-4244-0637-4), Dec.,2007
30.Mu-Chun Wang, Hsin-Chia Yang, “Surface Channel Hot Carrier Effect on CLC nTFTs”
Advanced Materials Research (AMR), (ISSN: 1022-6680, EI), Aug., 2011
31.Mu-Chun Wang, Hsin-Chia Yang, “Instability Effect on CLC nTFTs with Positive Bias Temperature Stress” Advanced Materials Research (AMR), (ISSN: 1022-6680, EI), Aug., 2011
32.Mu-Chun Wang, Hsin-Chia Yang, “Probing Drain Current with Vertical and Horizontal Electrical Fields under Temperature Stress on CLC nTFTs”, Advanced Materials Research (AMR),
(ISSN: 1022-6680, EI), Aug., 2011
33.Mu-Chun Wang, Hsin-Chia Yang, “Surface-Channel Drain-Avalanche Hot-Carrier Effect under Temperature Variation on CLC TFTs”, Advanced Materials Research (AMR),
(ISSN: 1022-6680, EI), Aug., 2011
34.Mu-Chun Wang, Hsin-Chia Yang, “Collar TEOS Integrity of Deep Trench DRAM Capacitor with a Vertical Parasitic NMOSFET”, Advanced Materials Research (AMR), (ISSN: 1022-6680, EI), Aug., 2011
35.Mu-Chun Wang, Hsin-Chia Yang, “Probing Active-Area Shift with Improved Kelvin Measurement for Trench DRAM”, Advanced Materials Research (AMR),
(ISSN: 1022-6680, EI), Aug., 2011
36.Mu-Chun Wang, Hsin-Chia Yang, Wen-Shiang Liao, “Performance of Surface Carrier Mobility for Nano-node Strained (110) MOSFETs with Temperature Effect,” (AEMT2011) Advanced Materials Research (AMR),
(ISSN: 1022-6680, EI ) Jul., 2011
37.Mu-Chun Wang, Hsin-Chia Yang, Wen-Shiang Liao, “MOSFET Performance Manufactured on <100> Silicon Wafer Using CESL Strain Technology with Temperature Effect”, (AEMT2011) Advanced Materials Research (AMR),
(ISSN: 1022-6680, EI), Jul., 2011
38.Mu-Chun Wang, Hsin-Chia Yang, “A Non-destructive and Effective Metrology to Automatically Monitor Kink Effect of MOSFETs”, (AEMT2011) Advanced Materials Research (AMR),
(ISSN: 1022-6680, EI), Jul., 2011
39.Mu-Chun Wang, Hsin-Chia Yang, and Yi-Jhen Li, “Minimization of Cascade Low-Noise Amplifier with 0.18 μm CMOS Process for 2.4 GHz RFID Applications” (EEIC 2011), Lecture Notes in Electrical Engineering Springer）(EELN),
(ISSN: 1876-1100, EI)Jun., 2011.
40.Mu-Chun Wang, Hsin-Chia Yang, and Ren-Hau Yang, “Parasitic Effect Degrading Cascode LNA Circuits with 0.18μm CMOS Process for 2.4GHz RFID Applications”,(EEIC 2011), Lecture Notes in Electrical Engineering（Springer）(EELN),
(ISSN: 1876-1100 , EI) Jun., 2011.
41.Mu-Chun Wang, Hsin-Chia Yang, “A Monopole Scoop-Shape Antenna for 2.4GHz RFID Applications,” (EEIC 2011), Lecture Notes in Electrical Engineering（Springer）(EELN),
(ISSN: 1876-1100 ,EI ), Jun., 2011.
42.Mu-Chun Wang, Long-Sian Lin, Wen-Shiang Liao, Ren-Hau Yang, Hsin-Chia Yang, Heng-Sheng Huang, “Embedded SiGe Source/Drain and Temperature Degrading Junction Performance on <110> 45 nm MOSFETs,”,4th 2011 IEEE International NanoElectronics Conference
(ISBN 978-1-4577-0379-9) Mar., 2011
43.Mu-Chun Wang, Ren-Hau Yang, Wen-Shiang Liao, Hsin-Chia Yang, Yi-Jhen Li, Heng-Sheng Huang, “Nano-Scale Si-Capping Thicknesses Impacting Junction Performance on <110> Silicon Substrate 4th 2011 IEEE International NanoElectronics Conference
(ISBN 978-1-4577-0379-9), Mar., 2011
44.Mu-Chun Wang, Ren-Hau Yang, Wen-Shiang Liao, Hsin-Chia Yang, Yi-Cheng Liao, Zhen-Ying Hsieh, Heng-Sheng Huang, “Mobility Enhancement on Nano-strained NMOSFET with Epitaxial Silicon Buffer Layers”, 2010 IEEE International Symposium on Next-Generation Electronics, pp. 237-240, KaoHsiung, Taiwan
(ISBN 978-1-4244-6694-8), Nov. 2010,
45.Mu-Chun Wang, Hsin-Chia Yang, Wen-Shiang Liao, Hsiu-Yen Yang, Yao-Yuan Hoe, Kuang-Hung Lin, Shuang-Yuang Chen, “CESL Deposition Promoting n/p MOSFETs under 45-nm-node Process Fabrication”, 2010 IEEE International Symposium on Next-Generation Electronics,
pp. 17-20, KaoHsiung, Taiwan
(ISBN 978-1-4244-6694-8) Nov. 2010,
46.Mu-Chun Wang, Kuo-Shu Huang, Shuang-Yuan Chen, Zhen-Ying Hsieh, Hsin-Chia Yang, Chuan-His Liu, Chii-Ruey Lin, “Efficiency of Dispenser with Nozzle Technology in Assembly”, IEEE/ 2010 International Conference on Electronic Packaging Technology ＆ High Density Packaging (ICEPT-HDP), pp. 476-479, Xi’an, China
(ISBN 978-1-4244-8142-2) Aug., 2010
47.Mu-Chun Wang, Kuo-Shu Huang, Zhen-Ying Hsieh, Hsin-Chia Yang, Chuan-Hsi Liu, Chii-Ruey Lin, “A Study to Performance of Electroplating Solder Bump in Assembly”, IEEE/ 2010 International Conference on Electronic Packaging Technology ＆ High Density Packaging (ICEPT-HDP), pp.794-797, Xi’an, China
(ISBN 978-1-4244-8142-2), Aug., 2010,
48.Mu-Chun Wang, Kuo-Shu Huang, Zhen-Ying Hsieh, Hsin-Chia Yang, Chuan-Hsi Liu, Chii-Ruey Lin, “Performance of Silver-Glue Attachment Technology in Assembly”, ,” IEEE/ 2010 International Conference on Electronic Packaging Technology ＆ High Density Packaging (ICEPT-HDP), p. 472-475, , Xi’an, China
(ISBN 978-1-4244-8142-2) Aug., 2010
49.Mu-Chun Wang, Ting-Yu Yang, Zhen-Ying Hsieh, Hsin-Chia Yang, Chuan-Hsi Liu, Chii-Ruey Lin, “Optimization of Solderability for 2.4GHz RF Printed-Circuit-Board Products”, IEEE/IMPACT, paper number TW009-2, pp.227-230, (ISBN 978-1-4244-4342-0), Oct., 2009, Taipei, Taiwan
四. 其他PAPER
1. Chang-Chih Hsieh, Ren-Hau Yang, Hsin-Chia Yang, Kuo-Hua Wu, and Mu-Chun Wang*, “
Miniaturization of Cascode Low-Noise Amplifier with 0.18um CMOS Process for 2.4GHz RFID
Applications,” 2010 Asia Pacific International Conference on RFID (APICOR), paper
number 46, Dec., 2010, Taipei, Taiwan.
2. Chang-Chih Hsieh, Yi-Jhen Li, Hsin-Chia Yang, and Mu-Chun Wang*, “Minimizing Size of
Cascade Low-Noise Amplifier with 0.18um CMOS Process for 2.4GHz RFID Applications,” 2010 Asia Pacific International Conference on RFID (APICOR), Number 38, Dec., 2010, Taipei, Taiwan.
3. Hsin-Chia Yang, Yao-Yuan Hoe, Ming-Feng Lu, Mu-Chun Wang*, You-Ming Hu, “Contrivance
and Proof of Ladder-Like Antenna for 2.46GHz RFID Applications,” 2010 Asia Pacific
International Conference on RFID (APICOR), paper number 53, Dec., 2010, Taipei, Taiwan.
4. Hsin-Chia Yang, Yao-Yuan Hoe, Ming-Feng Lu, Mu-Chun Wang*, You-Ming Hu, “Design and
Proof of Spiral-Like Antenna for 2.45GHz RFID Tag Applications,” 2010 Asia Pacific International Conference on RFID (APICOR), paper number 50, Dec., 2010, Taipei, Taiwan.
5. Hsin-Chia Yang, Yi-Cheng Luo, Ming-Feng Lu, Mu-Chun Wang*, You-Ming Hu, “Clamp-Like
Planar Antenna for 2.45GHz RFID Tag Applications,” 2010 Asia Pacific International
Conference on RFID (APICOR), paper number 52, Dec., 2010, Taipei, Taiwan.
6. Mu-Chun Wang*, Hsin-Chia Yang, Shih-Ying Chang, Yi-Jhen Li , Heng-Sheng Huang, “C-V
Analysis and Degradation of HC Stress near Vt Bias for CLC Poly-Si n-TFTs with Laser
Annealing Powers,” 2010 International Electron Devices and Materials Symposia (IEDMS),
paper number: B1-8, Nov. 2010, Taoyuan, Taiwan.
7. Hsin-Chia Yang , Min-Ru Peng, Wen-Shiang Liao, Mu-Chun Wang*, Shuang-Yuan Chen, Heng-
Sheng Huang, “Characteristics of Uni-axial Strained Nano-scale nMOSFETs with CESL Process on <100> Silicon Substrate,” 2010 International Electron Devices and Materials Symposia (IEDMS), Number: P-D-14, Nov. 2010, Taoyuan, Taiwan.
8. Hsin-Chia Yang, Yi-Cheng Luo, Wen-Shiang Liao, Mu-Chun Wang* , Shuang-Yuan Chen, Heng-
Sheng Huang, “A Study on N/P-Type Short / Long Channel Strained Devices on <100> Substrate with Various Thicknesses of Si-Cap Layer at Different Testing Temperatures,” 2010 International Electron Devices and Materials Symposia (IEDMS), paper number: P-D-35, Nov. 2010, Taoyuan, Taiwan.
9. Hsin-Chia Yang, Huei-Jyun Peng, Wen-Shiang Liao, Mu-Chun Wang*, Shuang-Yuan Chen, Heng-
Sheng Huang , “Performance of Nanoscale Strained PMOSFET Devices Measured at Different
Temperatures,” 2010 International Electron Devices and Materials Symposia (IEDMS), paper number:
P-D-32, Nov. 2010, Taoyuan, Taiwan.
10.Hsin-Chia Yang, Yao-Yuan Hoe, Wen-Shiang Liao, Mu-Chun Wang*, Shuang-Yuan Chen, Heng-
Sheng Huang, “N/PMOSFET Characteristics Fabricated on <100> Silicon Substrate Using
Strained Technology at Different temperatures,” 2010 International Electron Devices and Materials Symposia (IEDMS), paper number: P-D-33, Nov. 2010, Taoyuan, Taiwan.
11.Mu-Chun Wang, Zhen-Ying Hsieh, Shih-Ying Chang, Hsin-Chia Yang, Chih Chen, Shuang-Yuan
Chen, “Analysis of Degradation Mechanism for CLC poly-Si n-TFTs under Voltage Stress with Different Laser Annealing Powers,” (Accepted) 2009 International Electron Devices and Materials Symposia (IEDMS), pp., Nov. 2009, Taoyuan, Taiwan.
12.Mu-Chun Wang, Zhen-Ying Hsieh, Hsiu-Yen Yang, Chih Chen, Hsin-Chia Yang, Shuang-Yuan
Chen, “A Study of CHC Deterioration for CLC n-TFTs under Voltage Stresses,” (Accepted)
2009 International Electron Devices and Materials Symposia (IEDMS), pp., Nov. 2009, Taoyuan, Taiwan.
13.Shi-Jia Lin, Hsin-Chia Yang, Cheng-Yong Wang, Zhi-Guang Feng, Cheui-Tang Wang, “
Designs and Analysis of the 6~12 GHz Power Amplifiers,” Ming-Chuan University 2009
International Academic Conference, Applications of Communication Technology and Embedded Systems, pp. 241-247, Mar., 2009, Taoyan, Taiwan.
14.Cheng-Yong Wang, Hsin-Chia Yang, Shi-Jia Lin, Zhi-Guang Feng, Cheui-Tang Wang, “A 3.5
Low Noise Band-Pass Filter Using Active Inductor,” Ming-Chuan University 2009 International Academic Conference, Optoelectronic Devices, Circuits and Systems Design Conference, pp. 1-8, Mar., 2009, Taoyan, Taiwan.
15.Zhi-Guang Feng, Hsin-Chia Yang, Cheng-Yong Wang, Shi-Jia Lin, Cheui-Tang Wang, “6.5~10
GH Low Noise Amplifier (LNA),” Ming-Chuan University 2009 International Academic
Conference, Applications of Communication Technology and Embedded Systems, pp. 248-
254, Mar., 2009, Taoyan, Taiwan.
16.Cheng-Yong Wang, Hsin-Chia Yang, Shi-Jia Lin, Zhi-Guang Feng, Cheui-Tang Wang, “A 3.5
GHz High-Gain Mixer,” I-Shou University’s Electronic Technology Symposium Conference,
July 2008..
17.Po-Yu Chen , Hsin-Chia Yang, and Chuei-Tang Wang, “前端低功率低雜訊放大器設計1.5V 6.0
GHZ,” 智慧型工程系統研討會(遠東科技大學) MARCH. 2007.
18.Po-Yu Chen , Hsin-Chia Yang, and Chuei-Tang Wang, “A 5.0 GHz E-Class Power Amplifier
(5.0 GHZ 射頻E類放大器,” 高速電路設計研討會 MAY 2007
19.Hsin-Chia Yang and Yi-Chang Cheng, Japanese Journal of Applied Physics, vol. 44, No.
4A. 2005. pp1711-1716.
20.Mu-Chun Wang, Guang-Yi Yeh, Yi-Chang Cheng, Hsin-Chia Yang, Chieu-Ying Hsu, “A 2.4 GHz Class-E Full CMOS Power Amplifier with-micron Process for ISM Band Wireless
Communication,” 2005 International Academic Conference at Ming-Chuan University,
Electronic Group, pp41-47, Mar., 2005, Taiwan.
21.Kuo-Yu Chan, Yi-Chang Cheng, Hsin-Chia Yang, Mu-Chun Wang, and Chung-Chih Chi, “Design and Simulation of 2.4 GHz CMOS Down-Conversion Double Balanced Mixer for Wireless Communication, 2005 International Academic Conference at Ming-Chuan University,
Electronic Group, pp29-36, Mar., 2005, Taiwan.
22.Chung-Chih Ghi, Yi-Chang Cheng, Hsin-Chia Yang, Mu-Chun Wang, Kuo-Yu Chan, “Design of
2.4 GHz CMOS Low Noide Amplifier for Wireless Communication,” National Kaohsiung
Marine University and Science and Technology, 2005 Third Microelectronics Technology
Development and Applications of the Seminar.
23.Hsin-Chia Yang, Chong-Kuan Du, Wen-Shiang Liao, Yi-Jhen Li, Mu-Chun Wang, Tsao-Yeh
Chen, “Promising Reliability of Refilled S/D Strained N/PMOSFET Devices Fabricated on
<100> Substrate Linked to Junction Breakdown, and Punch-Through,” 2011 IEDMS, paper ID:092, Oct., 2011, Taipei, Taiwan.
24.Hsin-Chia Yang, Jing-Zong Jhang, Wen-Shiang Liao, Yi-Jhen Li, Mu-Chun Wang,
"Distinguishing Reliability of CESL Strained N/PMOSFET Devices Fabricated on <110>
Substrate Correlated with Junction Breakdown, and Punch-Through,” 2011 IEDMS, paper ID:090, Oct., 2011, Taipei, Taiwan.
25.Hsin-Chia Yang*, Yi-Jhen Li, Wen-Shiang Liao, Mu-Chun Wang, “Distinguishing
Characteristics of Refilled S/D Strained NMOSFET Devices Fabricated on <110> Substrate
Associated with Junction Breakdown, and Punch-Through,” 2011 IEDMS, paper
ID:084, Oct., 2011, Taipei, Taiwan.
26.Hsin-Chia Yang, Guo-Wei Wu, Wen-Shiang Liao, Yi-Jhen Li, Mu-Chun Wang, “Promising
Characteristics of CESL Strained PMOSFET Devices Fabricated on <100> Substrate
Correlated with Junction Breakdown, and Punch-Through,” 2011 IEDMS, paper
ID:089, Oct., 2011, Taipei, Taiwan.
27.Hsin-Chia Yang, Jhe-Chuen Yeh, Wen-Shiang Liao, Mu-Chun Wang, “Distinguishing
Repeatability of CESL Strained NMOSFET Devices Fabricated on <100> Substrate
Associated with Junction Breakdown, and Punch-Through,” 2011 IEDMS, paper
ID:083, Oct., 2011, Taipei, Taiwan.
28.Hsin-Chia Yang, etc. “探討奈米等級<100>應變矽PMOSFETs於不同矽覆蓋層下的通道電阻效應”2011第九屆微電子技術發展與應用研討會論文集，半導體元件?A20，國立高雄海洋科技大學(2011, 9th Conference on Micro-electronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, paper number A20, Taiwan, ISBN 978-986-02-7755-5) May, 2011,
29. Hsin-Chia Yang, etc, “CESL壓/拉應變對奈米等級<100>nMOFET之通道電阻研究”, 2011第九屆微電子技術發展與應用研討會論文集，半導體元件?A6，國立高雄海洋科技大學(2011, 9th Conference on Micro-electronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, paper number A6, Taiwan, ISBN 978-986-02-7755-5), May, 2011
30. Hsin-Chia Yang, etc, “<100>矽基片奈米n型電晶體在單軸CESL應變下之通道電阻特性研究”, 2011第九屆微電子技術發展與應用研討會論文集，半導體元件?A5，國立高雄海洋科技大學(2011, 9th Conference on Micro-electronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, paper number A5, Taiwan, ISBN 978-986-02-7755-5), May, 2011
31. Hsin-Chia Yang, etc, “<110>晶格平面下磊晶矽緩衝層於p通道應變矽電晶體特性之研究”, 2010第八屆微電子技術發展與應用研討會論文集，半導體材料?B12，國立高雄海洋科技大學(2010, 8th Conference on Micro-electronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Materials Group, B12, Taiwan, ISBN 978-986-02-3143-4)
May, 2010, Taiwan
32. Hsin-Chia Yang, etc, “覆蓋氮化矽接觸孔蝕刻停止層對<100>矽基底奈米n型單軸應力通道電晶體之特性研究”, 2010第八屆微電子技術發展與應用研討會論文集，半導體材料?B4，國立高雄海洋科技大學(2010, 8th Conference on Micro-electronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Materials Group, B4, Taiwan, ISBN 978-986-02-3143-4) May, 2010, Taiwan
33. Hsin-Chia Yang, etc, “矽鍺源汲極製程對奈米單軸壓縮應力應變通道電晶體特性之研究 “, 2010第八屆微電子技術發展與應用研討會論文集，半導體材料?B5，國立高雄海洋科技大學(2010, 8th Conference on Micro-electronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Materials Group, B5, Taiwan, ISBN 978-986-02-3143-4), May, 2010, Taiwan
五.參考資料-論文
1. Hsin-Chia Yang, Yi-Chang Cheng, “Low Effective SiO2 Thickness and Low Leakage Current
Ta2O5 Capacitors Based on Tantalum Tetraethoxide Dimethylamino-Ethoxide Precursor”,
Japanese Journal of Applied Physics(SCI), ISSN:1347-4065, Vol.44, No.4A, April 2005, pp1711-1716
2. Hsin-Chia Yang, Po-Yu Chen, and Chuei-Tang Wang*, “A 6.0 GHz Low Noise Amplifier and A 6.0 GHz E-Class Power Amplifier,” Electronic Devices and Solid Circuits, 2007, IEEE Conference
3. Hsin-Chia Yang, Yao-Yuan Hoe, Ming-Feng Lu, Mu-Chun Wang*, You-Ming Hu, “Contrivance and Proof of Ladder-Like Antenna for 2.46GHz RFID Applications,” 2010 Asia Pacific International Conference on RFID (APICOR), paper number 53, Dec., 2010, Taipei, Taiwan.
4. Hsin-Chia Yang, Yao-Yuan Hoe, Ming-Feng Lu, Mu-Chun Wang*, You-Ming Hu, “Design and
Proof of Spiral-Like Antenna for 2.45GHz RFID Tag Applications,” 2010 Asia Pacific International Conference on RFID (APICOR), paper number 50, Dec., 2010, Taipei, Taiwan.
5. Hsin-Chia Yang, Yi-Cheng Luo, Ming-Feng Lu, Mu-Chun Wang*, You-Ming Hu, “Clamp-Like
Planar Antenna for 2.45GHz RFID Tag Applications,” 2010 Asia Pacific International
Conference on RFID (APICOR), paper number 52, Dec., 2010, Taipei, Taiwan.
6. Hsin-Chia Yang , Min-Ru Peng, Wen-Shiang Liao, Mu-Chun Wang*, Shuang-Yuan Chen, Heng-
Sheng Huang, “Characteristics of Uni-axial Strained Nano-scale nMOSFETs with CESL
Process on <100> Silicon Substrate,” 2010 International Electron Devices and Materials
Symposia (IEDMS), paper number: P-D-14, Nov. 2010, Taoyuan, Taiwan.
7. Hsin-Chia Yang, Yi-Cheng Luo, Wen-Shiang Liao, Mu-Chun Wang* , Shuang-Yuan Chen, Heng-
Sheng Huang, “A Study on N/P-Type Short / Long Channel Strained Devices on <100>
Substrate with Various Thicknesses of Si-Cap Layer at Different Testing Temperatures,”
2010 International Electron Devices and Materials Symposia (IEDMS), paper number: P-D-
35, Nov. 2010, Taoyuan, Taiwan.
8. Hsin-Chia Yang, Huei-Jyun Peng, Wen-Shiang Liao, Mu-Chun Wang*, Shuang-Yuan Chen, Heng-
Sheng Huang , “Performance of Nanoscale Strained PMOSFET Devices Measured at Different
Temperatures,” 2010 International Electron Devices and Materials Symposia (IEDMS), paper number: P-D-32, Nov. 2010, Taoyuan, Taiwan.
9.Hsin-Chia Yang, Yao-Yuan Hoe, Wen-Shiang Liao, Mu-Chun Wang*, Shuang-Yuan Chen, Heng-
Sheng Huang, “N/PMOSFET Characteristics Fabricated on <100> Silicon Substrate Using
Strained Technology at Different temperatures,” 2010 International Electron Devices
and Materials Symposia (IEDMS), paper number: P-D-33, Nov. 2010, Taoyuan, Taiwan.
10.Shi-Jia Lin, Hsin-Chia Yang, Cheng-Yong Wang, Zhi-Guang Feng, Cheui-Tang Wang, “
Designs and Analysis of the 6~12 GHz Power Amplifiers,” Ming-Chuan University 2009
International Academic Conference, Applications of Communication Technology and
Embedded Systems, pp. 241-247, Mar., 2009, Taoyan, Taiwan.
11.Cheng-Yong Wang, Hsin-Chia Yang, Shi-Jia Lin, Zhi-Guang Feng, Cheui-Tang Wang, “A 3.5
Low Noise Band-Pass Filter Using Active Inductor,” Ming-Chuan University 2009 International Academic Conference, Optoelectronic Devices, Circuits and Systems Design
Conference, pp. 1-8, Mar., 2009, Taoyan, Taiwan.
12.Zhi-Guang Feng, Hsin-Chia Yang, Cheng-Yong Wang, Shi-Jia Lin, Cheui-Tang Wang, “6.5~10
GH Low Noise Amplifier (LNA),” Ming-Chuan University 2009 International Academic
Conference, Applications of Communication Technology and Embedded Systems, pp. 248-
254, Mar., 2009, Taoyan, Taiwan.
13.Cheng-Yong Wang, Hsin-Chia Yang, Shi-Jia Lin, Zhi-Guang Feng, Cheui-Tang Wang, “A 3.5
GHz High-Gain Mixer,” I-Shou University’s Electronic Technology Symposium Conference,
July 2008..
14.Po-Yu Chen , Hsin-Chia Yang, and Chuei-Tang Wang, “前端低功率低雜訊放大器設計1.5V 6.0
GHZ,” 智慧型工程系統研討會(遠東科技大學) MARCH. 2007.
15.Po-Yu Chen , Hsin-Chia Yang, and Chuei-Tang Wang, “A 5.0 GHz E-Class Power Amplifier
(5.0 GHZ 射頻E類放大器,” 高速電路設計研討會 MAY 2007
16.Hsin-Chia Yang, Chong-Kuan Du, Wen-Shiang Liao, Yi-Jhen Li, Mu-Chun Wang, Tsao-Yeh
Chen, “Promising Reliability of Refilled S/D Strained N/PMOSFET Devices Fabricated on
<100> Substrate Linked to Junction Breakdown, and Punch-Through,” 2011
IEDMS, paper ID:092, Oct., 2011, Taipei, Taiwan.
17.Hsin-Chia Yang, Jing-Zong Jhang, Wen-Shiang Liao, Yi-Jhen Li, Mu-Chun Wang,
"Distinguishing Reliability of CESL Strained N/PMOSFET Devices Fabricated on <110>
Substrate Correlated with Junction Breakdown, and Punch-Through,” 2011
IEDMS, paper ID:090, Oct., 2011, Taipei, Taiwan.
18.Hsin-Chia Yang*, Yi-Jhen Li, Wen-Shiang Liao, Mu-Chun Wang, “Distinguishing
Characteristics of Refilled S/D Strained NMOSFET Devices Fabricated on <110> Substrate
Associated with Junction Breakdown, and Punch-Through,” 2011 IEDMS, paper
ID:084, Oct., 2011, Taipei, Taiwan.
19.Hsin-Chia Yang, Guo-Wei Wu, Wen-Shiang Liao, Yi-Jhen Li, Mu-Chun Wang, “Promising
Characteristics of CESL Strained PMOSFET Devices Fabricated on <100> Substrate
Correlated with Junction Breakdown, and Punch-Through,” 2011 IEDMS, paper ID:089, Oct., 2011, Taipei, Taiwan.
20.Hsin-Chia Yang, Jhe-Chuen Yeh, Wen-Shiang Liao, Mu-Chun Wang, “Distinguishing
Repeatability of CESL Strained NMOSFET Devices Fabricated on <100> Substrate
Associated with Junction Breakdown, and Punch-Through,” 2011 IEDMS, paper ID:083, Oct., 2011, Taipei, Taiwan.