Academic Experience

Professor, Minghsin University of Science and Technolgy, Taiwan

Research Group and Part-Time Lecturer, Tsing-Hua University, Taiwan

Ph.D in Physics, University of Oregon, USA

Master Program in Computer Engineering, Santa Clara University, USA

Master in Physics, Tsing-Hua University R.O.C

Bachelor in Physics, Tsing-Hua University R.O.C

Industrial Experience

R&D Project Manager, Episil Technology Co., Taiwan, 1998-2002

Technologist, Applied Materials Taiwan, 1995-1998

Field Engineer, Delatech, USA, 1994-1995

Technique Experience

(I) SCI Papers
1. Hsin-Chia Yang, SungChing Chi, Bo-Hao Huang, Tung-Cheng Lai, Han-Ya Yang ², Yu-Tzu Yang “Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors”, Micromachines, December, 2025,16, 1393

2. Hsin-Chia Yang, SungChing Chi, Han-Ya Yang ², Yu-Tzu Yang “A Conclusive Algorithm with Kink Effects for Fitting 3-D FinFET and Planar MOSFET Characteristic Curves”, Applied Sciences, October, 2024,14, 09371

3. Hsin-Chia Yang, SungChing Chi,  “Conclusive Model-Fit Current-Voltage Characteristic Curves with Kink Effects”, Applied Sciences, October, 2023,13, 12379

4. Hsin-Chia Yang, SungChing Chi, Wen-Shiang Liao, “Comparison of Fitting Current-Voltage Characteristics Curves of FinFET Transistors with Various Fixed Parameters”, Applied Sciences, October, 2022,12, 10519

5.Hsin-Chia Yang, SungChing Chi, “Optimized E-Class Power Amplifiers Widely Covering 4.5 GHz from 2.5 to 7.0 GHz”, Journal of Internet Technology, V23, No.4, July, 2022

6. Hsin-Chia Yang, SungChing Chi, “Process Corresponding Implications Associated with a Conclusive Model-Fit Current-Voltage Characteristics Curves”, Applied Sciences, January, 2022,12, 462

7. Hsin-Chia Yang, Jui-Ming Tsai, Tsin-Yuan Chang, Wen-Shiang Liao, SungChing Chi, “The Effects of Thickness of Source/Drain Fin on P-Channel FinFET Devices and the Corresponding Quantum Effects”, NanoScience and Nano-Technology Letters, 
Volume 6, 2, pp165-169, Feb 2014
8. Mu-Chun Wang, Heng-Sheng Huang, Ming-Ru Peng, Shea-Jue Wang, Tsao-Yeh Chen, Weng-Shiang Liao, Hsin-Chia Yang, …etc. “Punch-Through and Junction Breakdown Characteristics for Uni-Axial Strained Nano-Node MOSFET on (100) Wafer”, International Journal of Material Product Technology, Vol 49, No.1, 2014
9. Szu-Hung Chen, Wen-Shiang Liao, Hsin-Chia Yang, etc, “High Performance III-V MOSFET  with Nano-Stacked High k Gate Dielectric and 3D Fin-Shape Structure”, Nanoscale Research Letters, 
Vol 7, 431, Aug.1, 2012
10. Mu-Chun Wang, Hsin-Chia Yang, Hong-Wen Hsu, Zhen-Ying Hsieh, Shuang-Yuan Chen, Shih-Ying Chang, and Chuan-His Liu, “Degradation Mechanism for Continuous-Wave Green Laser-crystallized Polycrystalline Silicon n-Channel Thin-Film Transistors under Low Vertical-Field Hot-Carrier Stress with Different Laser Annealing Powers”, Japanese Journal of Applied Physics (JJAP), (SCI IF 2009: 1.138) ISSN: 1347-4065, Nov., 2010.
11. Mu-Chun Wang, Chuan-Hsi Liu, Kuo-Shu Huang, Zhen-Ying Hsieh, Shuang-Yuan Chen, Hsin-Chia Yang, Chii-Ruey Lin, “Promoting of Charged-Device Model/Electrostatic Discharge Immunity in the Dicing Saw Process” Microelectronics Reliability, Vol. 50, Iss.6, pp.839-846, (SCI IF 2008: 1.29)
ISSN: 0026-2714, Mar, 2010.
12. Hsin-Chia Yang, Yi-Chang Cheng, “Low Effective SiO2 Thickness and Low Leakage Current Ta2O5 Capacitors Based on  Tantalum Tetraethoxide Dimethylamino-Ethoxide Precursor”,
Japanese Journal of Applied Physics(SCI), ISSN:1347-4065, Vol.44, No.4A, April 2005, pp1711-1716

(II) Reference-Inventive Patents
01.Republic of China,Patent No.I 886729, Timer Electrical circuit, 2025/06/11

02. Republic of China,Patent No.I 861914, RF Power Amplifier 2024/11/11

03. Republic of China, Patent No.I 745165 Current Parameter Calculation 2021/11/01

04. Republic of China, Patent, Patent No.I 736472 Current Parameter Calculation 2021/08/11
05. Republic of China, Patent No.I 525822 Structure of Semiconductor Device 2016/03/11
06. Republic of China, Patent No.I 419330  Structure of Semiconductor Device 2013/12/11
07. Republic of China, Patent No.I 419330 Calibration of Capacitor Measuring 2013/03/11
08. Republic of China, Patent No.I 381528 A Semiconductor Device 2013/01/01
09. People Republic of China, Patent No. ZL2013 1 0349646.6 Structure of Semiconductor Device 2016/03/02
10. People Republic of China, Patent No. ZL2009 1 0252766.8 Structure of Semiconductor Power Device 2012/07/04
11. People Republic of China, Patent No. ZL2008 1 0177032.3 Semiconductor Power Device 2010/06/09
12. Republic of China, Patent No. I304120: Parabolic Micro-strip Antenna 2007/01/01
13. Republic of China, Patent No. I 303777: Liquid Dispenser 2007/01/01
14. Republic of China, Patent No. I 466633 Etching Processing of Oxided Nitrogen Layer 2001/12/01
15. Republic of China, Patent No.I 466533 Ionic Real Time Monitoring Device 2001/12/01
16. Republic of China, Patent No.I 464898 Device of High Current Ion Production 2001/11/21
17. Republic of China, Patent No. I 463245 Device of Ionic Data Adjuctment 2001/11/11
18. Republic of China, Patent No. I 461024 Ultra Shallow Interfacial Layer by Using Nitrided Materials 2001/10/21
19. Republic of China, Patent No. I 457588 Processing of Thermal Oxidized Protective Layer 2001/10/01
20. Republic of China, Patent No. I 451311 Mass Analytic System by Using Electromagnetic Way 2001/08/21
21. Republic of China, Patent No. I 449803 Oxide Material Forming by Using Low Temperature In- Situ Vapor Processing 2001/08/11
22. Republic of China, Patent No. I 449782 Device of Magnetic Bottle Using Plasma Sinking System 2001/08/11
23. Republic of China, Patent No. I 439109 Ionic Energy Analytic Devices 2001/04/24
24. Republic of China, Patent No. I 432539 Nitrided Silicon Oxide Processing 2001/05/01
25. Republic of China, Patent No. I 426919 Low Temperature RPS Annealing to Gate Dielectric Oxide by using Microwave 2001/03/21
26. Republic of China, Patent No. I 417208 Thermal Processing to Metal oxide dielectric 2001/01/01


(III) EI Paper or IEEE Conference Paper

1. ¹Hsin-Chia Yang, ¹Sung-Ching Chi , ²Han-Ya Yang,” Promising New Understanding of 3D FinFET by Fitting Electrical Characteristic Curves”, Proceedings of the 2025 IEEE International Conference on Applied System Innovation, IEEE-ICACII 2025( ISBN:979-8-3503- 9492-4, EI)

2. ¹Hsin-Chia Yang, ¹Sung-Ching Chi , ¹Yu-Chih Su, ¹Chun-Wei Tseng, ¹Ven-Hau Nguyen, ¹Yi-Sheng Peng, ¹Jia-Ruei Shih, ¹Nai-Yun Hsu, ¹Hsin-Hung Chen, ¹Shin-Yu Feng, ¹Kai-Xiang Li, "Implicit Indication of Planar MOSFET and 3D FinFET by Fitting Electrical Characteristic Curves”, Proceedings of the 2024 IEEE International Conference on Innovation, Communication and Engineering, IEEE-ICICE 2024( ISBN:979-8-3503- 9492-4, EI)

3. ¹Hsin-Chia Yang, ¹Sung-Ching Chi , Yu-Chen Chang,  ¹Hsing-Hao Wei, ¹Po-Sheng Kuo, ¹Yuan-Jheng He,¹Yi-Jun Lin, Chun-Wei Tseng, Chieh Chang, Ren-Wei Kuo, Yi-Chun Hung, "Edge Trigger and its Application”, Proceedings of the 2024 IEEE International Conference on Innovation, Communication and Engineering, IEEE-ICICE 2024 ( ISBN:979-8-3503- 9492-4, EI)

4. ¹Hsin-Chia Yang, ¹Sung-Ching Chi , ¹Yu-Chih Su, ¹Chun-Wei Tseng, ¹Ven-Hau Nguyen, ¹Po-Hao Cheng, ¹Kai-Chieh Chang, ¹Pei-Chi Wu, " Conclusive Algorithm with Kink Effects for Fitting Planar MOSFET Characteristic Curves”, Proceedings of the 2024 IEEE International Conference on Applied System Innovation, IEEE-ICACII 2024( ISBN:979-8-3503- 9492-4, EI)

5. ¹Hsin-Chia Yang, ¹Sung-Ching Chi , Kai-Chieh Chang,  ¹Ven-Hau Nguyen, ¹Po-Hao Cheng, ¹Pei-Chi Wu,¹Chun-Wei Tseng, "Promising Low Noise Amplifiers in Various Frequency Bands from 1.8GHz to 5.8GHz”, Proceedings of the 2024 IEEE International Conference on Applied System Innovation, IEEE-ICACII 2024( ISBN:979-8-3503- 9492-4, EI)

6. Hsin-Chia Yang, Sung-Ching Chi, Kai-Chieh Chang, ¹Ven-Hau Nguyen, ¹Po-Hao Cheng, ¹Chun-Wei Tseng, ¹Yu-Hong Lai, ¹Shao-Ming Chang, "Promising Implicit Indication by Fitting Algorithm on MOSFET Electrical Characteristic Curves”, Proceedings of the 2023 IEEE International Conference on Innovation, Communication and Engineering, IEEE-ICICE 2023 ( ISBN: 978-1-83953 -995-4,EI)

7. Hsin-Chia Yang, Sung-Ching Chi, ¹Pei-Jun Yang, ¹Bo-Hao Huang, ¹Jin-An Kuo, ¹Pei-Chi Wu, ¹Yi-Sheng Peng, ¹Zhen-Yu Cai, "Electrical Performances of Insulated Gated Bipolar Transistor (IGBT) Addressed by Promising Mechanism”, Proceedings of the 2023 IEEE International Conference on Innovation, Communication and Engineering, IEEE-ICICE 2023 ( ISBN: 978-1-83953 -995-4,EI)

8. Hsin-Chia Yang, Sung-Ching Chi, Yu-Kuan Fan, Yu-Hong Lai, ¹Shao-Ming Chang, ¹Chen-Yu Tsai, ¹Chieh Chang ¹Yute Chao, "Intelligent Protection for Airport Potential Threat”, Proceedings of the 2023 IEEE International Conference on Innovation, Communication and Engineering, IEEE-ICICE 2023 ( ISBN: 978-1-83953 -995-4,EI)

9. ¹Hsin-Chia Yang, ¹You-Sheng Lin, ¹Zhe-Wei Lin, ¹Tzu-Chien Chen, ¹Sheng-Ping Wen, ¹Chen-Yu Tsai, ¹Kuan-Hung Chen, ¹Pei-Jun Yang, ¹Chia-Chun Lin, ¹Chang-Ping Hsu, ¹Chen-Chien Tsai, ²Yu-Tsung Liao, ¹Sung-Ching Chi " Negative Fixed Threshold Voltage on NFinFET Current-Voltage Characteristics Curves”, Proceedings of the 2022 IEEE International Conference on Applied System Innovation, IEEE-ICACII 2022( ISBN:978-1-6654- 9650-6, EI)

10. ¹Hsin-Chia Yang, ¹Kuan-Hung Chen, ¹Tzu-Chien Chen, ¹Sheng-Ping Wen, ¹Zhe-Wei Lin, ¹Chen-Yu Tsai, ¹You-Sheng Lin, ¹Kuan-Hung Chen, ¹Pei-Jun Yang, ¹Chia-Chun Lin, ¹Chang-Ping Hsu, ¹Chen-Chien Tsai, ²Yu-Tsung Liao, ¹Sung-Ching Chi " Current-Voltage Characteristics Curves with Fixed Kn”, Proceedings of the 2022 IEEE International Conference on Applied System Innovation, IEEE-ICACII 2022 (ISBN:978- 1-6654- 9650-6, EI)

11.Hsin-Chia Yang, Sung-Ching Chi,, Pei-Jun Yang, Chia-Chun Lin, Kuan-Hung Chen, You-Sheng Lin Promising Algorithm Addressing Characteristic Curves of Insulated Gated Bipolar Transistor (IGBT) Fitted by Applying Bipolar Transistor Driven by Insulated Gate Bias 7th IEEE International Conference on Applied System Innovation, IEEE-ICASI 2021 ( ISBN:978-1-6654- 4143 -8, EI)

12.Hsin-Chia Yang, Pei-Jun Yang, Chia-Chun Lin, Kuan-Hung Chen, You-Sheng Lin, Sung-Ching Chi Current-Voltage Characteristic Curves Addressing Non-Linear Kink-like Effects 7th IEEE International Conference on Applied System Innovation, IEEE-ICASI 2021 ( ISBN:978-1-6654-4143-8,EI)

13.Hsin-Chia Yang, Ming-Jun Weng, Yuan-Chou Shen, Yi-Syuan Lin, Min-Hsuan Yang, Yu-Tsung Liao, Sung-Ching Chi, " A Conclusive Algorithm to Model Fit Current Voltage Characteristics Curves of FinFET Transisitor”, 6th IEEE International Conference on Applied System Innovation, IEEE-ICASI 2020 ( ISBN:978-1-7281-7536-2,EI)

14.Hsin-Chia Yang, Yang-Ming Yang, Min-Hsuan Yang,  Yi-Syuan Lin, Jia-Jun Lin, Rung Jin Chang, Han Ya Yang, Yu-Tsung Liao, Sung-Ching Chi, "A Conclusive Model-Fit Current-Voltage Characteristics Curves of FinFET Transisitors with Fin Width 120nm”, 6th IEEE International Conference on Applied System Innovation, IEEE-ICASI 2020 ( ISBN:978-1-7281-7536-2,EI)

15. Hsin-Chia Yang, Yi-Syuan Lin, Rung Jin Chang, Han Ya Yang, Sung Ching Chi," Electrical Performances of Insulated Gated Bipolar Transistor (IGBT) in Terms of Bipolar Transistor Driven by Insulated Gate Bias”, 6th IEEE International Conference on Applied System Innovation, IEEE-ICASI 2020 ( ISBN:978-1-7281-7536-2,EI)

16. Hsin-Chia Yang, Chi-Chan Li, Yuan-Chou Shen, Yi-Syuan Lin, Sung-Ching Chi, Yu-Tsung Liao, "Wide Band Low Noise Power Amplifiers covering 2.4 to 7.1GHz”, 6th IEEE International Conference on Applied System Innovation, IEEE-ICASI 2020 ( ISBN:978-1-7281-7536-2,EI)

17. Hsin-Chia Yang, Rui-Sheng Chen, Ya Yuan Yang, Chun-Kai Tseng, Chia-Juan Tsai, Jian-Jia Tseng, Sung-Ching Chi, ²Yu-Jung Liao " Electrical Performances of NFinFET and PFinFET Transistors Correlating Processing Conditions and Scales of the Fin Structure”, 8th IEEE International Conference on Innovation and CE, IEEE-ICICE 2019 ( First Prize Award, ISBN: 978-1-7281 -0110-1,EI)

18.Hsin-Chia Yang, Chia-Juan Tsai, Chun-Kai Tseng, Ya Yuan Yang, Rui-Sheng Chen, Jian-Jia Tseng, Sung-Ching Chi, ²Yu-Jung Liao" Temperature Effects on Electrical Performances of NFinFET Transistors with Channel Length 90 nanometer” Proceedings of the 2019 IEEE International Conference on Innovation, Communication and Engineering, IEEE-ICICE 2019 ( ISBN:978-1- 7281-0110-1,EI)

19. Hsin-Chia Yang, Kai-Hung Hsieh, Hsiu-Hsien Yu, Chun-Yian Chang, Kun-Hong Liao, Yu-Jung Liao, Sung-Ching Chi " An Alternative Algorithm to Fit All-Aspect Current-Voltage Characteristics Curves on FinFET Devices”, 2^nd IEEE International Conference on Innovation and Invention, IEEE-ICKII 2019 ( ISBN:978-1-7281-0110-1,EI)

20.Hsin-Chia Yang, Kuo-Chin Lo, Hsiu-Hsien Yu, Chun-Yian Chang, Kun-Hong Liao, ²Yu-Jung Liao, Sung-Ching Ch" Electrical Performances of Insulated Gated Bipolar Transistor on Breakdown Voltage Corresponding to the Resulted Voltage due to the Applied Current Source”, 2^nd IEEE International Conference on Innovation and Invention,  IEEE-ICKII 2019 ( ISBN:978-1-7281-0110-1,EI)

21.Hsin-Chia Yang, Cheng-Cian Wang, Sung-Ching Chi, Yu-Jung Liao " Evaluation and analysis of the effect of an insulated gated bipolar transistor on the electrical performance of trans-conductance”, Proceedings of the 2018 IEEE International Conference on Innovation, Communication and Engineering, IEEE-ICICE 2018 - Meen, Prior & Lam (Eds, EI)

22.Hsin-Chia Yang, Ting-Wei Lu, Tsin-Yuan Chang, Sung-Ching Chi ," The Comparisons between the Two Different Current-Voltage Characteristics Curves on FinFET Device”, Proceedings of the 2018 IEEE International Conference on Innovation, Communication and Engineering, IEEE-ICICE 2018- Meen, Prior & Lam (Eds, EI)

23.Hsin-Chia Yang,"Collective Quantum Behaviors in the Quantum Well Associated with the Strongly Inversed Channel",Proceedings of the 2017 IEEE International Conference on Applied System Innovation
IEEE-ICASI 2017 - Meen, Prior & Lam (Eds)

24.Hsin-Chia Yang, Ting-Wei Lu, Tsin-Yuan Chang, Sung-Ching Chi ,"The Variation of Threshold Voltages Associated with Various Applied Gate Voltages at Different Temperatures on FinFET Devices",Proceedings of the 2017 IEEE International Conference on Applied System Innovation (Best Conference Paper Award)
IEEE-ICASI 2017 - Meen, Prior & Lam (Eds)
25.Hsin-Chia Yang, Guan-Hao Shen “An Optimal Low Noise Power Amplifier of Ultra-High Gain Extensively Applicable from 2.1 to 5.1 GHz”, Proceedings of 2014 3^rd Asia Pacific conference on Antenna and Propagation, 2014, ISSN: 9781-4799-4354
26.Hsin-Chia Yang, Jui-Ming Tsai, Tsin-Yuan Chang, SungChing Chi, “The Determination of Threshold Voltages on N-Channel Fin-FET Devices and the Associated Quantum Effects”, International Journal of Engineering Innovative Technology,
Vol. 3, Issue 5, Nov. 2013, ISSN: 2277-3754
27.Hsin-Chia Yang, Mu-Chun Wang, “Extensive 6.0 -18.0 GHz Frequency Low Noise Amplifiers Integrated to Form LC-Feedback Oscillators,” Advanced Materials Research (AMR), (ISSN: 1022-6680, EI), Apr., 2011
28.Hsin-Chia Yang, Mu-Chun Wang, “Evaluation of the Capacitances by Using High Frequency Roll-Off Fitting to the second order approximation”, Advanced Materials Research (AMR), 
(ISSN: 1022-6680, EI), Feb., 2011
29.Hsin-Chia Yang, Evaluation of the Capacitances by Using High Frequency Roll-Off Fitting to the second order approximation,Advanced Materials Research (AMR), (ISSN: 1022-6680, EI), 2011
Vols.204-210
30.Hsin-Chia Yang, Min-Ru Peng, Wen-Shiang Liao, Mu-Chun Wang, Shuang-Yuan Chen, Heng-Sheng Huang, “Performance of Uni-axial Strained Nano-regime nMOSFETs with CESL Process on <100> Silicon  Substrate,” 電子資訊---發光二極體磊晶生產設備專刊, 2011 (ISSN1996796-9), Jan, 2011
31.Hsin-Chia Yang, Ming-Der Chang, Mu-Chun Wang, Sungching Chi, Chuei-Tang Wang, “3.5 GHz to 10.0 GHz Mixers of High Gain and Good Isolation”, IEEE/ The 6th International Conference on Wireless Communications, Network and Mobile Computing (WiCOM 2011), Wuhan, China
(ISBN 978-1-6252-0) Sep., 2011
32.Hsin-Chia Yang, Wen-Shiang Liao, Min-Ru Peng, Mu-Chun Wang, Zhen-Ying Hsieh, Shuang-Yuan Chen, Heng-Sheng Huang, “Study of Temperature Effects of Mobility, Swing, and Early Voltages on Strained MOSFET Devices “, 4th 2011 IEEE International NanoElectronics Conference (ISBN 978-1-4577-0379-9) Mar., 2011
33.Hsin-Chia Yang, Kan-Tse Yeh, Ming-Der Chang, Sungching Chi, Shih-Chia Lin, Chuei-Tang Wang, “Study of Nano-regime Strained MOSFETs with Temperature Effect”, 2010 IEEE International Symposium on Next-Generation Electronics, pp. 186-189 , KaoHsiung, Taiwan
(ISBN 978-1-4244-6694-8), Nov. 2010
34.Hsin-Chia Yang, Ming-Der Chang, Kan-Tse Yeh, Sungching Chi, Mu-Chun Wang, Chuei-Tang Wang, “Promising 5.0-15.0 GHz LC Feedback Oscillators”, IEEE/ The 6th International Conference on Wireless Communications, Network and Mobile Computing (WiCOM 2010), Chengdu , China(ISBN 978-1-4244-3709-2) Sep., 2010,
35.Hsin-Chia Yang, “Determination of Capacitance of DRAM Capacitor as Encountering Roll-Off Problems,IEEE/ICEMI/2009 
(ISBN 978-1-4244-3864-8), Aug., 2009
36.Hsin-Chia Yang, Shih-Chia Lin, Zhi-Guang Feng, Cheng-Yong Wang, Chingyei Chung, Chuei-Tang Wang, “Promising 6.0-12 GHz Low Noise Amplifiers by Combining Two Matched Amplifiers”, IEEE 5th International Conference on Wireless Communications, Networking and Mobile Computing(ISBN 978-1-4244-3693-4), Sep., 2009
37.Hsin-Chia Yang, Po-Yu Chen, Chuei-Tang Wang, “A 6.0 GHz Low Noise Amplifier and A 6.0 GHz E-Class Power Amplifier”, Electronic Devices and Solid Circuits, 2007, IEEE Conference
(ISBN 978-1-4244-0637-4), Dec.,2007
38.Mu-Chun Wang, Hsin-Chia Yang, “Surface Channel Hot Carrier Effect on CLC nTFTs”
Advanced Materials Research (AMR), (ISSN: 1022-6680, EI), Aug., 2011
39.Mu-Chun Wang, Hsin-Chia Yang, “Instability Effect on CLC nTFTs with Positive Bias Temperature Stress” Advanced Materials Research (AMR), (ISSN: 1022-6680, EI), Aug., 2011
40.Mu-Chun Wang, Hsin-Chia Yang, “Probing Drain Current with Vertical and Horizontal Electrical Fields under Temperature Stress on CLC nTFTs”, Advanced Materials Research (AMR), 
(ISSN: 1022-6680, EI), Aug., 2011
41.Mu-Chun Wang, Hsin-Chia Yang, “Surface-Channel Drain-Avalanche Hot-Carrier Effect under Temperature Variation on CLC TFTs”, Advanced Materials Research (AMR), 
(ISSN: 1022-6680, EI), Aug., 2011
42.Mu-Chun Wang, Hsin-Chia Yang, “Collar TEOS Integrity of Deep Trench DRAM Capacitor with a Vertical Parasitic NMOSFET”, Advanced Materials Research (AMR), (ISSN: 1022-6680, EI), Aug., 2011
43.Mu-Chun Wang, Hsin-Chia Yang, “Probing Active-Area Shift with Improved Kelvin Measurement for Trench DRAM”, Advanced Materials Research (AMR), 
(ISSN: 1022-6680, EI), Aug., 2011
44.Mu-Chun Wang, Hsin-Chia Yang, Wen-Shiang Liao, “Performance of Surface Carrier Mobility for Nano-node Strained (110) MOSFETs with Temperature Effect,” (AEMT2011) Advanced Materials Research (AMR),
(ISSN: 1022-6680, EI ) Jul., 2011
45.Mu-Chun Wang, Hsin-Chia Yang, Wen-Shiang Liao, “MOSFET Performance Manufactured on <100> Silicon Wafer Using CESL Strain Technology with Temperature Effect”, (AEMT2011) Advanced Materials Research (AMR), 
(ISSN: 1022-6680, EI), Jul., 2011
46.Mu-Chun Wang, Hsin-Chia Yang, “A Non-destructive and Effective Metrology to Automatically Monitor Kink Effect of MOSFETs”, (AEMT2011) Advanced Materials Research (AMR), 
(ISSN: 1022-6680, EI), Jul., 2011
47.Mu-Chun Wang, Hsin-Chia Yang, and Yi-Jhen Li, “Minimization of Cascade Low-Noise Amplifier with 0.18 μm CMOS Process for 2.4 GHz RFID Applications” (EEIC 2011), Lecture Notes in Electrical Engineering Springer）(EELN), 
(ISSN: 1876-1100, EI)Jun., 2011.
48.Mu-Chun Wang, Hsin-Chia Yang, and Ren-Hau Yang, “Parasitic Effect Degrading Cascode LNA Circuits with 0.18μm CMOS Process for 2.4GHz RFID Applications”,(EEIC 2011), Lecture Notes in Electrical   Engineering（Springer）(EELN), 
(ISSN: 1876-1100 , EI) Jun., 2011.
49.Mu-Chun Wang, Hsin-Chia Yang, “A Monopole Scoop-Shape Antenna for 2.4GHz RFID Applications,” (EEIC 2011), Lecture Notes in Electrical Engineering（Springer）(EELN), 
(ISSN: 1876-1100 ,EI ), Jun., 2011.
50.Mu-Chun Wang, Long-Sian Lin, Wen-Shiang Liao, Ren-Hau Yang, Hsin-Chia Yang, Heng-Sheng Huang, “Embedded SiGe Source/Drain and Temperature Degrading Junction Performance on <110> 45 nm MOSFETs,”,4th 2011 IEEE International NanoElectronics Conference 
(ISBN 978-1-4577-0379-9) Mar., 2011
51.Mu-Chun Wang, Ren-Hau Yang, Wen-Shiang Liao, Hsin-Chia Yang, Yi-Jhen Li, Heng-Sheng Huang, “Nano-Scale Si-Capping Thicknesses Impacting Junction Performance on  <110> Silicon Substrate 4th 2011 IEEE International NanoElectronics Conference 
(ISBN 978-1-4577-0379-9), Mar., 2011
52.Mu-Chun Wang, Ren-Hau Yang, Wen-Shiang Liao, Hsin-Chia Yang, Yi-Cheng Liao, Zhen-Ying Hsieh, Heng-Sheng Huang, “Mobility Enhancement on Nano-strained NMOSFET with Epitaxial Silicon Buffer Layers”, 2010 IEEE International Symposium on Next-Generation Electronics, pp. 237-240, KaoHsiung, Taiwan
(ISBN 978-1-4244-6694-8), Nov. 2010,
53.Mu-Chun Wang, Hsin-Chia Yang, Wen-Shiang Liao, Hsiu-Yen Yang, Yao-Yuan Hoe, Kuang-Hung Lin, Shuang-Yuang Chen, “CESL Deposition Promoting n/p MOSFETs under 45-nm-node Process Fabrication”, 2010 IEEE International Symposium on Next-Generation Electronics, 
pp. 17-20, KaoHsiung, Taiwan
(ISBN 978-1-4244-6694-8)  Nov. 2010,
54.Mu-Chun Wang, Kuo-Shu Huang, Shuang-Yuan Chen, Zhen-Ying Hsieh, Hsin-Chia Yang, Chuan-His Liu, Chii-Ruey Lin, “Efficiency of Dispenser with Nozzle Technology in Assembly”, IEEE/ 2010 International Conference on Electronic Packaging Technology ＆ High Density Packaging (ICEPT-HDP), pp. 476-479, Xi’an, China
(ISBN 978-1-4244-8142-2) Aug., 2010
55.Mu-Chun Wang, Kuo-Shu Huang, Zhen-Ying Hsieh, Hsin-Chia Yang, Chuan-Hsi Liu, Chii-Ruey Lin, “A Study to Performance of Electroplating Solder Bump in Assembly”, IEEE/ 2010 International Conference on Electronic Packaging Technology ＆ High Density Packaging (ICEPT-HDP), pp.794-797, Xi’an, China
(ISBN 978-1-4244-8142-2), Aug., 2010,
56.Mu-Chun Wang, Kuo-Shu Huang, Zhen-Ying Hsieh, Hsin-Chia Yang, Chuan-Hsi Liu, Chii-Ruey Lin, “Performance of Silver-Glue Attachment Technology in Assembly”, ,” IEEE/ 2010 International Conference on Electronic Packaging Technology ＆ High Density Packaging (ICEPT-HDP), p. 472-475, , Xi’an, China
(ISBN 978-1-4244-8142-2) Aug., 2010
57.Mu-Chun Wang, Ting-Yu Yang, Zhen-Ying Hsieh, Hsin-Chia Yang, Chuan-Hsi Liu, Chii-Ruey Lin, “Optimization of Solderability for 2.4GHz RF Printed-Circuit-Board Products”, IEEE/IMPACT, paper number TW009-2, pp.227-230, (ISBN 978-1-4244-4342-0), Oct., 2009, Taipei, Taiwan

(IV) Reference PAPER
1. Chang-Chih Hsieh, Ren-Hau Yang, Hsin-Chia Yang, Kuo-Hua Wu, and Mu-Chun Wang*, “      
Miniaturization of Cascode Low-Noise Amplifier with 0.18um CMOS Process for 2.4GHz RFID
Applications,” 2010 Asia Pacific International Conference on RFID (APICOR), paper
number 46, Dec., 2010, Taipei, Taiwan.
2. Chang-Chih Hsieh, Yi-Jhen Li, Hsin-Chia Yang, and Mu-Chun Wang*, “Minimizing Size of
Cascade Low-Noise Amplifier with 0.18um CMOS Process for 2.4GHz RFID Applications,”  2010 Asia Pacific International Conference on RFID (APICOR), Number 38, Dec., 2010, Taipei, Taiwan.
3. Hsin-Chia Yang, Yao-Yuan Hoe, Ming-Feng Lu, Mu-Chun Wang*, You-Ming Hu, “Contrivance 
and Proof of Ladder-Like Antenna for 2.46GHz RFID Applications,” 2010 Asia Pacific 
International Conference on RFID (APICOR), paper number 53, Dec., 2010, Taipei, Taiwan.
4. Hsin-Chia Yang, Yao-Yuan Hoe, Ming-Feng Lu, Mu-Chun Wang*, You-Ming Hu, “Design and 
Proof of Spiral-Like Antenna for 2.45GHz RFID Tag Applications,” 2010 Asia Pacific International Conference on RFID (APICOR), paper number 50, Dec., 2010, Taipei, Taiwan.
5. Hsin-Chia Yang, Yi-Cheng Luo, Ming-Feng Lu, Mu-Chun Wang*, You-Ming Hu, “Clamp-Like 
Planar Antenna for 2.45GHz RFID Tag Applications,” 2010 Asia Pacific International 
Conference on RFID (APICOR), paper number 52, Dec., 2010, Taipei, Taiwan.
6. Mu-Chun Wang*, Hsin-Chia Yang, Shih-Ying Chang, Yi-Jhen Li , Heng-Sheng Huang, “C-V 
Analysis and Degradation of HC Stress near Vt Bias for CLC Poly-Si n-TFTs with Laser 
Annealing Powers,” 2010 International Electron Devices and Materials Symposia (IEDMS), 
paper number: B1-8, Nov. 2010, Taoyuan, Taiwan.
7. Hsin-Chia Yang , Min-Ru Peng, Wen-Shiang Liao, Mu-Chun Wang*, Shuang-Yuan Chen, Heng-
Sheng Huang, “Characteristics of Uni-axial Strained Nano-scale nMOSFETs with CESL Process on <100> Silicon Substrate,” 2010 International Electron Devices and Materials Symposia (IEDMS), Number: P-D-14, Nov. 2010, Taoyuan, Taiwan.
8. Hsin-Chia Yang, Yi-Cheng Luo, Wen-Shiang Liao, Mu-Chun Wang* , Shuang-Yuan Chen, Heng-
Sheng Huang, “A Study on N/P-Type Short / Long Channel Strained Devices on <100> Substrate with Various Thicknesses of Si-Cap Layer at Different Testing Temperatures,” 2010 International Electron Devices and Materials Symposia (IEDMS), paper number: P-D-35, Nov. 2010, Taoyuan, Taiwan.
9. Hsin-Chia Yang, Huei-Jyun Peng, Wen-Shiang Liao, Mu-Chun Wang*, Shuang-Yuan Chen, Heng-
Sheng Huang , “Performance of Nanoscale Strained PMOSFET Devices Measured at Different 
Temperatures,” 2010 International Electron Devices and Materials Symposia (IEDMS), paper number: 
P-D-32, Nov. 2010, Taoyuan, Taiwan.
10.Hsin-Chia Yang, Yao-Yuan Hoe, Wen-Shiang Liao, Mu-Chun Wang*, Shuang-Yuan Chen, Heng-
Sheng Huang, “N/PMOSFET Characteristics Fabricated on <100> Silicon Substrate Using 
Strained Technology at Different temperatures,” 2010 International Electron Devices and Materials Symposia (IEDMS), paper number: P-D-33, Nov. 2010, Taoyuan, Taiwan.
11.Mu-Chun Wang, Zhen-Ying Hsieh, Shih-Ying Chang, Hsin-Chia Yang, Chih Chen, Shuang-Yuan 
Chen, “Analysis of Degradation Mechanism for CLC poly-Si n-TFTs under Voltage Stress with Different Laser Annealing Powers,” (Accepted) 2009 International Electron Devices and Materials Symposia (IEDMS), pp., Nov. 2009, Taoyuan, Taiwan.
12.Mu-Chun Wang, Zhen-Ying Hsieh, Hsiu-Yen Yang, Chih Chen, Hsin-Chia Yang, Shuang-Yuan 
Chen, “A Study of CHC Deterioration for CLC n-TFTs under Voltage Stresses,” (Accepted) 
2009 International Electron Devices and Materials Symposia (IEDMS), pp., Nov. 2009, Taoyuan, Taiwan.
13.Shi-Jia Lin, Hsin-Chia Yang, Cheng-Yong Wang, Zhi-Guang Feng, Cheui-Tang Wang, “ 
Designs and Analysis of the 6~12 GHz Power Amplifiers,” Ming-Chuan University 2009 
International Academic Conference, Applications of Communication Technology and Embedded Systems, pp. 241-247, Mar., 2009, Taoyan, Taiwan.
14.Cheng-Yong Wang, Hsin-Chia Yang,  Shi-Jia Lin, Zhi-Guang Feng, Cheui-Tang Wang, “A 3.5 
Low Noise Band-Pass Filter Using Active Inductor,” Ming-Chuan University 2009 International Academic Conference, Optoelectronic Devices, Circuits and Systems Design Conference, pp. 1-8, Mar., 2009, Taoyan, Taiwan.
15.Zhi-Guang Feng, Hsin-Chia Yang, Cheng-Yong Wang, Shi-Jia Lin, Cheui-Tang Wang, “6.5~10 
GH Low Noise Amplifier (LNA),” Ming-Chuan University 2009 International Academic 
Conference, Applications of Communication Technology and Embedded Systems, pp. 248-
254, Mar., 2009, Taoyan, Taiwan.
16.Cheng-Yong Wang, Hsin-Chia Yang,  Shi-Jia Lin, Zhi-Guang Feng, Cheui-Tang Wang, “A 3.5 
GHz High-Gain Mixer,” I-Shou University’s Electronic Technology Symposium Conference, 
July 2008..
17.Po-Yu Chen , Hsin-Chia Yang, and Chuei-Tang Wang, “前端低功率低雜訊放大器設計1.5V 6.0 
GHZ,” 智慧型工程系統研討會(遠東科技大學) MARCH. 2007.
18.Po-Yu Chen , Hsin-Chia Yang, and Chuei-Tang Wang, “A 5.0 GHz E-Class Power Amplifier
(5.0 GHZ 射頻E類放大器,” 高速電路設計研討會 MAY 2007
19.Hsin-Chia Yang and Yi-Chang Cheng, Japanese Journal of Applied Physics, vol. 44, No. 
4A. 2005. pp1711-1716.
20.Mu-Chun Wang, Guang-Yi Yeh, Yi-Chang Cheng, Hsin-Chia Yang, Chieu-Ying Hsu, “A 2.4 GHz Class-E Full CMOS Power Amplifier with-micron Process for ISM Band Wireless 
Communication,” 2005 International Academic Conference at Ming-Chuan University, 
Electronic Group, pp41-47, Mar., 2005, Taiwan.
21.Kuo-Yu Chan, Yi-Chang Cheng, Hsin-Chia Yang, Mu-Chun Wang, and Chung-Chih Chi, “Design and Simulation of 2.4 GHz CMOS Down-Conversion Double Balanced Mixer for Wireless Communication, 2005 International Academic Conference at Ming-Chuan University, 
Electronic Group, pp29-36, Mar., 2005, Taiwan.
22.Chung-Chih Ghi, Yi-Chang Cheng, Hsin-Chia Yang, Mu-Chun Wang, Kuo-Yu Chan, “Design of 
2.4 GHz CMOS Low Noide Amplifier for Wireless Communication,” National Kaohsiung 
Marine University and Science and Technology, 2005 Third Microelectronics Technology 
Development and Applications of the Seminar. 
23.Hsin-Chia Yang, Chong-Kuan Du, Wen-Shiang Liao, Yi-Jhen Li, Mu-Chun Wang, Tsao-Yeh 
Chen, “Promising Reliability of Refilled S/D Strained N/PMOSFET Devices Fabricated on 
<100> Substrate Linked to Junction Breakdown, and Punch-Through,” 2011 IEDMS, paper ID:092, Oct., 2011, Taipei, Taiwan.
24.Hsin-Chia Yang, Jing-Zong Jhang, Wen-Shiang Liao, Yi-Jhen Li, Mu-Chun Wang, 
"Distinguishing Reliability of CESL Strained N/PMOSFET Devices Fabricated on <110>
Substrate Correlated with Junction Breakdown, and Punch-Through,” 2011 IEDMS, paper ID:090, Oct., 2011, Taipei, Taiwan.
25.Hsin-Chia Yang*, Yi-Jhen Li, Wen-Shiang Liao, Mu-Chun Wang, “Distinguishing
Characteristics of Refilled S/D Strained NMOSFET Devices Fabricated on <110> Substrate
Associated with Junction Breakdown, and Punch-Through,” 2011 IEDMS, paper
ID:084, Oct., 2011, Taipei, Taiwan.
26.Hsin-Chia Yang, Guo-Wei Wu, Wen-Shiang Liao, Yi-Jhen Li, Mu-Chun Wang, “Promising
Characteristics of CESL Strained PMOSFET Devices Fabricated on <100> Substrate
Correlated with Junction Breakdown, and Punch-Through,” 2011 IEDMS, paper
ID:089, Oct., 2011, Taipei, Taiwan.
27.Hsin-Chia Yang, Jhe-Chuen Yeh, Wen-Shiang Liao, Mu-Chun Wang, “Distinguishing
Repeatability of CESL Strained NMOSFET Devices Fabricated on <100> Substrate
 Associated with Junction Breakdown, and Punch-Through,” 2011 IEDMS, paper 
ID:083, Oct., 2011, Taipei, Taiwan.
28.Hsin-Chia Yang, etc. “探討奈米等級<100>應變矽PMOSFETs於不同矽覆蓋層下的通道電阻效應”2011第九屆微電子技術發展與應用研討會論文集，半導體元件?A20，國立高雄海洋科技大學(2011, 9th Conference on Micro-electronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, paper number A20, Taiwan, ISBN 978-986-02-7755-5) May, 2011,
29. Hsin-Chia Yang, etc, “CESL壓/拉應變對奈米等級<100>nMOFET之通道電阻研究”, 2011第九屆微電子技術發展與應用研討會論文集，半導體元件?A6，國立高雄海洋科技大學(2011, 9th Conference on Micro-electronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, paper number A6, Taiwan, ISBN 978-986-02-7755-5), May, 2011
30. Hsin-Chia Yang, etc, “<100>矽基片奈米n型電晶體在單軸CESL應變下之通道電阻特性研究”, 2011第九屆微電子技術發展與應用研討會論文集，半導體元件?A5，國立高雄海洋科技大學(2011, 9th Conference on Micro-electronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, paper number A5, Taiwan, ISBN 978-986-02-7755-5), May, 2011
31. Hsin-Chia Yang, etc, “<110>晶格平面下磊晶矽緩衝層於p通道應變矽電晶體特性之研究”, 2010第八屆微電子技術發展與應用研討會論文集，半導體材料?B12，國立高雄海洋科技大學(2010, 8th Conference on Micro-electronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Materials Group, B12, Taiwan, ISBN  978-986-02-3143-4)
May, 2010, Taiwan
32. Hsin-Chia Yang, etc, “覆蓋氮化矽接觸孔蝕刻停止層對<100>矽基底奈米n型單軸應力通道電晶體之特性研究”, 2010第八屆微電子技術發展與應用研討會論文集，半導體材料?B4，國立高雄海洋科技大學(2010, 8th Conference on Micro-electronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Materials Group, B4, Taiwan, ISBN  978-986-02-3143-4) May, 2010, Taiwan
33. Hsin-Chia Yang, etc, “矽鍺源汲極製程對奈米單軸壓縮應力應變通道電晶體特性之研究 “, 2010第八屆微電子技術發展與應用研討會論文集，半導體材料?B5，國立高雄海洋科技大學(2010, 8th Conference on Micro-electronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Materials Group, B5, Taiwan, ISBN  978-986-02-3143-4), May, 2010, Taiwan