教授

王木俊 教授兼系主任

王木俊

Email

mucwang@must.edu.tw

電話

3143

研究室

電子館107室

職掌

系主任


學歷

1.美國德州農工大學/ 電機工程博士 1992/9~ 1995/5
2.美國德州農工大學/ 電機工程碩士 1990/9~ 1992/8
3.國立交通大學/電子物理系 學士   1982/9~ 1986/6


經歷

1. 明新科技大學/電子系所 系主任 2023/08~ 迄今
2. MDPI/ Sensors 特刊(Precise Fiber Optic Sensors) 客座編輯 2021/09~ 2022/11
3. MDPI/ Crystals 特刊(Nano-Semiconductors: Devices and Technology)客座編輯2021/10~ 2023/03
4. MDPI/ Crystals 特刊(Optoelectronics and Photonics in Crystals) 客座編輯 2022/02~ 2023/05
5. Sensors and Materials特刊(Materials, Devices, Circuits, and Analytical Methods for Various Sensors) 客座編輯 2023/03~ 2024/04
6. 明新科技大學/工學院 封裝測試產業技術中心負責人 2019/01~ 2019/12
7. 明新科技大學/電子系所 系主任 2017/10~ 2019/07
8. 明新科技大學/電子系所 教授 2009/2~ 迄今
9. 明新科技大學/電子系所 副教授 2006/2~ 2009/1
10. 明新科技大學/電子系所 助理教授2003/8~ 2006/1
11. 國立台北科技大學/機電整合研究所兼任教授 2006/2 ~2017/7
12. 國立台北科技大學/奈米矽元件設計中心成員 2006/2 ~2018/7
13. 明新科技大學/工學院 晶片研究中心主任 2008/8 ~2012/8
14. 明新科技大學/工學院 機電整合中心主任 2014/8/1~2017/7/31
15. 國立台灣大學/RFID中心成員 2008/4 ~2012/12
16. 中華民國優良廠商協會 顧問 2011/6 ~2014/11
17. 新竹市政府 市政顧問 2010/5 ~2014/12
18. 東洋企業管理顧問有限公司 顧問 2011/9 ~~迄今
19. 大葉大學/電機系所 助理教授2001/8~ 2003/7
20. 聯華電子/技術開發處 元件部經理 1997/4 ~ 2001/8
21. 世界先進半導體/技術開發處 元件資深工程師 1995/6 ~ 1997/4
22. 聯華電子/品質可靠處 故障分析工程師 1989/6 ~ 1990/7
23. 工研院/光電所 光電工程師 1988/8~ 1989/6
24. Members of IEEE, ECS, and ASME
<短期訓練講師>
台灣積體電路公司、聯華電子公司、力晶半導體公司、友達光電、台達電子公司、茂德科技公司、茂矽電子、華邦電子公司、漢民系統公司、帆宣科技公司、台灣應材公司、漢磊科技、沛亨半導體、恩智浦半導體、泰林科技、台灣半導體產業協會、自強基金會、晶發半導體公司、美商科磊、矽拓科技、點拓科技、矽品精密、工研院、新竹科管局、經濟部工業局、交大電子人才培訓中心。


研究興趣

IC製程整合,微/奈米元件物理,VLSI可靠性工程,RF IC設計,積體電路設計,積體電路封裝技術,奈米積體電路製程,半導體物理,TFT顯示器原理,平面顯示器原理,奈米科技導論,量子電子學,機率,電磁學,電子學,VLSI設計,類比電路設計,射頻電路設計,工程數學/ 電子研究所在職專班與日間部導師。
微/奈米IC製程整合,微/奈米矽元件設計, 半導體物理,IC可靠性工程, RF IC/RFID設計, IC故障分析,光電薄膜電晶體特性 ,生醫光纖感測 。


 

研究與工作精神: 做事負責,處事積極,待人以誠; 對神,對人有愛心。

[神愛世人,甚至將他的獨生子賜給他們,叫一切信他的,不致滅亡,反得永生。聖經 約3:16]

 

Papers collected time: 1998~ present

Total papers: 491; 472 papers at Minghsin University of Science and Technology (MUST); 461 papers at MUST from 2006 to present.

 

期刊論文; SCI papers:51; EI papers:20; Others: 16; IEEE conf. papers:120

  1. Wen Ching Hsieh*, Bing Mau Chen, Mu Chun Wang, Yih Shing Lee, Chien Chung Tsai, “Enhancing the Tunable Sensitivity of a NUV−VIS−NIR Photo Irradiance Sensor Using an IAZAOS,” Crystals, 13(11), 1530, Oct. 2023; https://doi.org/10.3390/cryst13111530. (SCI IF2022: 2.670)
  2. Shou-Yen Chao, Wen-How Lan, Shou-Kong Fan, Zi-Wen Zhon, Mu-Chun Wang*, “Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments,” Micromachines, 13(11), 1861, Oct. 2022. (SCI IF2022: 3.523) doi: 10.3390/mi13111861
  3. Mu-Chun Wang *, Shou-Yen Chao, Chun-Yeon Lin *, Cheng-Hsun-Tony Chang, Wen-How Lan, “Low-Frequency Vibration Sensor with Dual Fiber Fabry-Perot Interferometer Using a Low-Coherence LED,” Crystals, 12(8), 1079, Aug. 2022. (SCI IF2021: 2.670)
  4. Wan-Chun Yang, David Jui-Yang Feng, Hsin-Hui Kuo, Ming-Chang Shih, Mu-Chun Wang, Chien-Jung Huang, and Wen-How Lan*, “Visible-light Photocatalytic Study of SnOx:N Islands on Bi2MoO6,” Sensors and Materials, 34(5), (2022) 1991–1999. (SCI IF2021:0.879) (Published on 2022/05/31)
  5. Shou-Yen Chao, Heng-Sheng Huang, Ping-Ray Huang, Chun-Yeon Lin, Mu-Chun Wang*, “Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields,” Crystals, 12(2), 295, Feb. 2022. (SCI IF2021: 2.670)
  6. David Jui-Yang Feng, Chien-Yu Lai, Ming-Chang Shih, Millie Yang, Wen-How Lan*, Mu-Chun Wang, Cheng-Fu Yang*, “Study of N-doping in (Bi2MoO6, MoO3)/SnOx:N Photocatlyst in the Degradation of RhB Using Visible Light,” Modern Physics Letters B (MPLB), vol. 35, no. 29, pp. 2141007-1~ 2141007-12, June 2021. (SCI IF2020: 1.668)
  7. Mu-Chun Wang*, Wen-Ching Hsieh, Chii-Ruey Lin, Wei-Lun Chu, Wen-Shiang Liao, Wen-How Lan*, “High-drain Field Impacting Channel-length Modulation Effect for Nano-node n-channel FinFETs,” Crystals, 11(3), 262, Mar. 2021. (SCI IF2019: 2.404)
  8. Chii‐Wen Chen, Mu-Chun Wang*, Cheng-Hsun-Tony Chang, Wei-Lun Chu, Shun-Ping Sung, Wen‐How Lan*, “Hot Carrier Stress Sensing Bulk Current for 28-nm Stacked High-k nMOSFETs,” Electronics, 9(12), 2095, Dec. 2020. (SCI IF2019: 2.412)
  9. Chii‐Wen Chen, Shea-Jue Wang, Wen-Ching Hsieh, Jian-Ming Chen, Te Jong, Wen-How Lan*, and Mu-Chun Wang*, “Q-factor Performance of 28 nm-node High-k Gate Dielectric under DPN Treatment at Different Annealing Temperatures,” Electronics, 9(12), 2086, Dec. 2020. (SCI IF2019: 2.412)
  10. Ching-Chuan Chou, Tien-Szu Shen, Jian-Ming Chen, Cheng-Hsun-Tony Chang, Shea-Jue Wang, Wen-How Lan, Mu-Chun Wang*, “Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments,” Journal of Electronic Materials (JEMS), vol. 49, pp.6764–6775, May 2020. (SCI IF2018/2019: 1.676)
  11. Chun-An Chen, Yu-Ting Hsu, Wen-How Lan*, Kai-Feng Huang, Kuo-Jen Chang, Mu-Chun Wang, Chien-Jung Huang, “On the Nitrogen Doping in Erbium and Nitrogen Codoped Magnesium Zinc Oxide Diode by Spray Pyrolysis,” Crystals, vol.10, iss.34, pp.34-46, Jan. 2020 (SCI IF2017: 2.14).
  12. Tien-Szu Shen, Ching-Chuan Chou, Mu-Chun Wang*, Wen-Shiang Liao, Ting-Wei Chao, Wen-How Lan, “Electrical Characteristics of n-type FinFETs under VT Ion Implantation on SOI Substrate,” IEEE Transactions on Plasma Science, vol. 47, iss. 2, pp.1145-1151, Feb. 2019. (SCI IF2017: 1.253)
  13. Yu-Ting Hsu, Che-Chi Lee, Wen-How Lan*, Kai-Feng Huang, Kuo-Jen Chang, Jia-Ching Lin, Shao-Yi Lee, Wen-Jen Lin, Mu-Chun Wang and Chien-Jung Huang “Thickness Study of Er-Doped Magnesium Zinc Oxide Diode by Spray Pyrolysis,” Crystals, vol.8, pp.454-466, Dec. 2018 (SCI IF2017: 2.14)
  14. Shea-Jue Wang, Mu-Chun Wang*, Shih-Fan Chen, Yu-Hsiang Li, Tien-Szu Shen, Hui-Yun Bor, Chao-Nan Wei, “Electrical and physical characteristics of WO3/Ag/WO3 sandwich structure fabricated with magnetic-control sputtering metrology,” Sensors, vol.18, iss. 2803, pp.1-11, Aug. 2018. (SCI IF2018: 3.302)
  15. Heng-Sheng Huang, Wei-Lun Wang, Mu-Chun Wang*, Yu-Hao Chao, Shea-Jue Wang, Shuang-Yuan Chen, “I-V Model of Nano nMOSFETs Incorporating Drift and Diffusion Current,” Vacuum, vol.155, pp.76-82, June 2018. (SCI IF2016: 1.530).
  16. Shea-Jue Wang, Shun-Ping Sung, Mu-Chun Wang*, Heng-Sheng Huang, Shuang-Yuan Chen, Shou-Kong Fan, “Electrical Stress Probing Recovery Efficiency of 28nm HK/MG nMOSFETs using Decoupled Plasma Nitridation Treatment,” Vacuum, vol.153, pp.117-121, May 2018. (SCI IF2016: 1.530).
  17. Tzu-Hsiang Lin, Wen-How Lan*, Ming-Chang Shih, Mu-Chun Wang*, Kuo-Jen Chang, Jia-Ching Lin, Shao-Yi Lee, Wen-Jen Lin, and Chien-Jung Huang, “Resistance Study of Er-doped Zinc Oxide Diode by Spray Pyrolysis,” Sensors and Materials, vol. 30, no. 4, pp. 939–946, Apr. 2018. (SCIE IF2016: 0.519)
  18. Yue-Gie Liaw, Chii-Wen Chen, Wen-Shiang Liao, Mu-Chun Wang*, Xuecheng Zou, “Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs,” Modern Physics Letters B (MPLB), vol. 32, no. 15, pp. 1850157-1~ 1850157-12, May 2018. (SCI IF2016: 0.617)
  19. Yi-Fu Lu, Wen-How Lan*, Mu-Chun Wang*, Ming-Chang Shih, Hsin-Hui Kuo, David Jui-Yang Feng, Yi-Jen Chiu, Yung-Jr Hung, Cheng-Fu Yang, “Carrier Concentration of Calcium Zinc Oxide with Different Calcium Contents Deposited through Spray Pyrolysis,” (On-line) Microsystem Technologies (MITE), vol. 24, pp.4267–4272 (SCIE IF2016: 1.195), Feb., 2018.
  20. Fu-Yuan Tuan, ChiiWen Chen, Mu-Chun Wang*, WenShiang Liao, Shea-Jue Wang, Shou-Kong Fan, WenHow Lan*, “Thermal Stress Probing the Channellength Modulation Effect of Nano N-type FinFETs,” Microelectronics Reliability (MR), vol. 83, pp. 260-270, April 2018. (SCI IF2016: 1.371)
  21. Yue-Gie Liaw, Wen-Shiang Liao*, Mu-Chun Wang*, Chii-Wen Chen, Deshi Li, Haoshuang Gu, and Xuecheng Zou, “Performance Characteristics of p-channel FinFETs with Varied Si-fin Extension Lengths for Source and Drain Contacts,” Semiconductors, vol.51, iss.12, pp1650–1655, Dec. 2017. (SCI IF 2015:0.693)
  22. Yue-Gie Liaw, Wen-Shiang Liao*, Mu-Chun Wang*, Cheng-Li Lin, Bin Zhou, Haoshuang Gu, Deshi Li, Xuecheng Zou, “A high aspect ratio silicon-fin FinFET fabricated upon SOI wafer,” Solid State Electronics, vo.126, pp.46-50, Dec. 2016. (SCI IF 2015: 1.345)
  23. Mu-Chun Wang*, Shea-Jue Wang, Shuang-Yuan Chen, Dai-Heng Wu, Jun-Wen Cai, Wen-How Lan, “The Integrity of 28nm HK/MG nMOSFETs Probed with Drain Bias Stress,” Advances in Engineering Research (ICEMIE2016), vol. 51, pp.67-71, May 2016. (ISSN 2352-5401)
  24. Mu-Chun Wang*, Shea-Jue Wang, Chii-Wen Chen, Zhi-Hong Xu, Wen-How Lan, “ DPN Treatment plus Annealing Temperatures for 28nm HK/MG nMOSFETs with CHC Stress,” Advances in Engineering Research (ICEMIE2016), vol. 51, pp.76-80, May 2016. (ISSN 2352-5401)
  25. Tzu-Yang Lin, Yu-Ting Hsu, Lung-Chien Chen, Mu-Chun Wang, Wei-Hsuan Hsu, Chun-Yi Lee, Sheng-Chung Huang, Yu-Xuan Ding, Kai-Feng Huang, and Wen-How Lan, “Conductivity Study of Nitrogen-Doped Magnesium Zinc Oxide Prepared by Spray Pyrolysis,” American Scientific Publishers / Material Focus, vol. 4, no.3, pp. 223–226, June 2015. (ISSN: 2169-429X)
  26. K..C. Lin*, P.C. Juan, C. H. Liu, M.C. Wang, C. H. Chou , “Leakage Current Mechanism and Effect of Y2O3 Doped with Zr High-K Gate Dielectrics,” Microelectronics Reliability (MR), Vol.55, Iss. 11, pp. 2198–2202, Nov. 2015. (SCI IF 2013: 1.214) (*: corresponding author) Rank: ENGINEERING, ELECTRICAL & ELECTRONIC: 124/248.
  27. Shea-Jue Wang, Mu-Chun Wang*, Shuang-Yuan Chen, Wen-How Lan, Bor-Wen Yang, LS Huang, Chuan-Hsi Liu, “Heat Stress Exposing Performance of Deep-nano HK/MG nMOSFETs using DPN or PDA Treatment,” Microelectronics Reliability (MR), Vol.55, Iss. 11, pp.2203-2207, Nov. 2015. (SCI IF 2013: 1.214) (*: corresponding author) Rank: ENGINEERING, ELECTRICAL & ELECTRONIC: 124/248.
  28. Win-Der Lee, Mu-Chun Wang*, Shea-Jue Wang, Wen-How Lan, Jie-Min Yang, LS Huang, “Comparison of electrical characteristics for SiONx and HfZrOx gate dielectrics of MOSFETs with decoupled plasma nitridation treatment,” Microelectronic Engineering (MEE), Vol. 138, pp. 97–101, Apr. 2015. (SCI IF 2013: 1.338), Rank: ENGINEERING, ELECTRICAL & ELECTRONIC: 110/248.
  29. Shea-Jue Wang, Mu-Chun Wang*, Win-Der Lee, Wen-Sheng Chen, Heng-Sheng Huang and Shuang-Yuan Chen, LS Huang and Chuan-Hsi Liu, “Kink effect for 28nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures,” International Journal of Nanotechnology (IJNT), Vol.12, Nos. 1/2, pp.59-73, Jan. 2015. (SCI IF 2013: 1.144; ISSN: 1475-7435), Rank: MATERIALS SCIENCE, MULTIDISCIPLINARY: 149/251.
  30. Win-Der Lee, Mu-Chun Wang*, Shea-Jue Wang, Wen-How Lan, Chao-Wang Li, Bor-Wen Yang, “Modification of Early Effect for 28nm nMOSFETs Deposited with HfZrOx Dielectric after DPN Process Accompanying Nitrogen Concentrations,” IEEE Transactions on Plasma Science (TPS), Vol.42, No.12, Part I, pp.3747-3750, Dec. 2014. (SCI IF 2013: 0.95; ISSN:0093-3813), Rank: PHYSICS, FLUIDS & PLASMAS: 22/31.
  31. Shea-Jue Wang, Mu-Chun Wang*, Win-Der Lee, Jie-Min Yang, LS Huang, Heng-Sheng Huang, “Gate Leakage for 28nm Stacked HfZrOx Dielectric of p-channel MOSFETs after Decoupled Plasma Nitridation Treatment with Annealing Temperatures,” IEEE Transactions on Plasma Science (TPS), Vol.42, No.12, Part I, pp.3712-3715, Dec. 2014. (SCI IF 2013: 0.95; ISSN:0093-3813), Rank: PHYSICS, FLUIDS & PLASMAS: 22/31.
  32. Win-Der Lee, Mu-Chun Wang*, Shea-Jue Wang, Chun-Wei Lian, LS Huang, “Gate Leakage Characteristics for 28nm HfZrOx PMOSFETs after DPN Process Treatment with Different Nitrogen Concentration,” IEEE Transactions on Plasma Science (TPS), Vol.42, No.12, Part I, pp.3703-3705, Dec. 2014. (SCI IF 2013: 0.95; ISSN:0093-3813), Rank: PHYSICS, FLUIDS & PLASMAS: 22/31.
  33. Mu-Chun Wang, Heng-Sheng Huang, Min-Ru Peng, Shea-Jue Wang*, Tsao-Yeh Chen*, Wen-Shiang Liao, Hsin-Chia Yang, Chuan-Hsi Liu*, “Punch-through and junction breakdown characteristics for uniaxial strained nano-node metal-oxide-semiconductor field-effect transistors on (100) wafers,” (AMEE 2013) Int. J. Materials & Product Technology (IJMPT), Vol. 49, No. 1, pp.25–40, Apr. 2014. (SCI IF 2013: 0.282; ISSN print: 0268-1900) (*: corresponding author), Rank: MATERIALS SCIENCE, MULTIDISCIPLINARY: 234/251.
  34. Win-Der Lee, Mu-Chun Wang*, “Early Effect for 28nm HK/MG PMOSFETs after Post Deposition Annealing Treatment,” (CMME2014) Advanced Materials Research (AMR), Vol.910, pp.40-43, Mar. 2014. (EI ; ISSN: 1022-6680)
  35. Win-Der Lee, Mu-Chun Wang*, “Threshold Voltage Adjustment for 28nm HfOx/ZrOx/HfOx Gate Dielectric of nMOSFETs using DPN Process with Annealing Temperatures,” (CMME2014) Advanced Materials Research (AMR), Vol.910, pp.44-47, Mar. 2014. (EI ; ISSN: 1022-6680)
  36. Mu-Chun Wang, Shea-Jue Wang*, Heng-Sheng Huang, Shuang-Yuan Chen, Min-Ru Peng, Liang-Ru Ji, Ming-Feng Lu*, Wen-Shiang Liao, Chuan-Hsi Liu, “Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors,” International Journal of Nanotechnology (IJNT), Vol. 11, No. 1/2/3/4, pp.62-74, Mar. 2014. (SCI IF 2012: 1.186), Rank: MATERIALS SCIENCE, MULTIDISCIPLINARY: 214/259.
  37. K.C. Lin, M.J. Twu, P.C. Juan, H.W. Hsu, H.S. Huang, M.C. Wang, C.H. Liu, "Impact of Stress Induced by Stressors on Hot Carrier Reliability of Strained nMOSFETs," International Journal of Nanotechnology (IJNT), Vol. 11, No. 1/2/3/4, pp.27-39, Mar. 2014.. (SCI IF 2012: 1.186), Rank: MATERIALS SCIENCE, MULTIDISCIPLINARY: 214/259.
  38. H. W. Hsu, H. S. Huang, C. C. Lee, S. Y. Chen, H. H. Teng, M. R. Peng, M. C. Wang, and C. H. Liu*, “Comparison of NMOSFET and PMOSFET Devices That Combine CESL Stressor and SiGe Channel,” Journal of Nanoscience and Nanotechnology (JNN), Vol. 13, No. 12, pp.8127-8132, Dec. 2013. (SCI IF 2012: 1.149), Rank: MATERIALS SCIENCE, MULTIDISCIPLINARY: 130/251.
  39. 王木俊, “奈米製程中應變工程對MOS元件效能之影響” (TSIA) 台灣半導體產業協會簡訊電子書, 66, pp.2-7, 10, 2013. (新聞局版台省誌字第1086)
  40. Hsin-Chia Yang*, Jui-Ming Tsai, Cheng-Huang Tsao, Mu-Chun Wang, Sungching Chi, Tsing-Yung Chang, “Mixers of Ultra-High Gain from 5.0 to 18.0 GHz,” Wireless Engineering and Technology (Scientific Research), Vol. 4, No. 1, pp. 1-4, Jan. 2013
  41. H. W. Hsu, H. W. Chen, H. S. Huang, C. P. Cheng, K. C. Lin, S. Y. Chen, M. C. Wang*, C. H. Liu*, “Time Dependent Dielectric Breakdown (TDDB) Characteristics of Metal-Oxide- Semiconductor Capacitors with HfLaO and HfZrLaO Ultra-Thin Gate Dielectrics,” Solid State Electronics (SSE), vol. 77, pp.2-6, Nov., 2012. (SCI IF2010: 1.438 ) (*: corresponding author), Rank: ENGINEERING, ELECTRICAL & ELECTRONIC: 88/243.
  42. Szu-Hung Chen, Wen-Shiang Liao, Hsin-Chia Yang, Shea-Jue Wang, Yue-Gie Liaw, Hao Wang, Haoshuang Gu and Mu-Chun Wang*, “High-Performance III-V MOSFET with Nano-stacked High-k Gate Dielectric and 3D Fin-shaped Structure,” Nanoscale Research Letters (NRL), vol. 7, iss.1, p.431, Aug. 2012. (SCI IF 2011: 2.73 ); Rank: MATERIALS SCIENCE, MULTIDISCIPLINARY: 44/241
  43. Piyas Samanta*, Heng-Sheng Huang, Shuang-Yuan Chen, Tsung-Jian Tzeng, and Mu-Chun Wang, “Interface trap generation and recovery mechanisms during and after positive bias stress in metal-oxide-semiconductor structures,” Applied Physics Letters (APL), vol. 100, pp. 203503-1~4, May 14, 2012. (SCI IF 2011: 3.844), Rank: PHYSICS, APPLIED: 20/128
  44. Chuan-Hsi Liu*, Hung-Wen Hsu, Hung-Wen Chen, Pi-Chun Juan, Mu-Chun Wang, Chin-Po Cheng, Heng-Sheng Huang, “Reliability Characteristics of Metal-Oxide-Semiconductor Capacitors with 0.72 nm Equivalent-Oxide-Thickness LaO/HfO2 Stacked Gate Dielectrics,” Microelectronic Engineering (MEE), vol. 89, pp.15-18, Jan., 2012. (SCI IF 2011: 1.557), Rank: ENGINEERING, ELECTRICAL & ELECTRONIC: 44/241.
  45. Wen-Shiang Liao*, Mu-Chun Wang, Yongming Hu, Szu-Hung Chen, Kun-Ming Chen, Yue-Gie Liaw, Cong Ye, Wenfeng Wang, Di Zhou, Hao Wang*, Haoshuang Gu, “Drive Current and Hot Carrier Reliability Improvements of High-aspect-ratio N-channel Fin-shaped Field Effect Transistor with High-tensile Contact Etching Stop Layer,” Applied Physics Letters (APL), vol. 99, pp.173505-1~3, Oct. 26, 2011. (SCI IF 2010: 3.841) (*: corresponding author), Rank: PHYSICS, APPLIED: 17/125.
  46. Mu-Chun Wang, Heng-Sheng Huang, Wen-Shiang Liao, Hsin-Chia Yang*, Ren-Hau Yang, Shuang-Yuan Chen, “CESL Deposition Enhancing Performance of n/pMOSFETs under 45-nm Process Manufacture,”  International Journal of Electrical Engineering (IJEE), vol.18, no.6, pp.285-290, Dec. 2011. (EI Journal; ISSN: 1812-3031)
  47. Mu-Chun Wang*, Hsin-Chia Yang, “Probing Drain Current with Vertical and Horizontal Electrical Fields under Temperature Stress on CLC TFTs,” (ADME2011) Advanced Materials Research (AMR), vol. 314-316, pp. 1922-1925, Aug., 2011. (EI ; ISSN: 1022-6680)
  48. Mu-Chun Wang*, Hsin-Chia Yang, “Instability Effect on CLC nTFTs with Positive-Bias Temperature Stress,” (ADME2011) Advanced Materials Research (AMR), vol. 314-316, pp. 1918-1921, Aug., 2011. (EI ; ISSN: 1022-6680)
  49. Mu-Chun Wang*, Hsin-Chia Yang, “Probing Active-Area Shift with Improved Kelvin Measurement for Trench DRAM,” (ADME2011) Advanced Materials Research (AMR), vol. 314-316, pp. 2474-2477, Aug., 2011. (EI ; ISSN: 1022-6680)
  50. Mu-Chun Wang*, Hsin-Chia Yang, “Collar TEOS Integrity of Deep Trench DRAM Capacitor with a Vertical Parasitic NMOSFET,” (ADME2011) Advanced Materials Research (AMR), vol. 314-316, pp. 2385-2388, Aug., 2011. (EI ; ISSN: 1022-6680)
  51. Mu-Chun Wang*, Hsin-Chia Yang, “Surface Channel Hot-Carrier Effect on CLC n-TFTs,” (ADME2011) Advanced Materials Research (AMR), vol. 314-316, pp. 1881-1884, Aug., 2011. (EI ; ISSN: 1022-6680)
  52. Mu-Chun Wang*, Hsin-Chia Yang, “Surface-Channel Drain-Avalanche Hot-Carrier Effect under Temperature Variation on CLC TFTs,” (ADME2011) Advanced Materials Research (AMR), vol. 314-316, pp. 1926-1929, Aug., 2011. (EI ; ISSN: 1022-6680)
  53. Mu-Chun Wang*, Hsin-Chia Yang, Yi-Jhen Li,Minimization of Cascade Low-Noise Amplifier with 0.18um CMOS Process for 2.4 GHz RFID Applications,” (EEIC 2011), Lecture Notes in Electrical EngineeringSpringer(LNEE), vol. 97, Electronics and Signal Processing, pp. 571-578, June, 2011. (EI ; ISSN: 1876-1100)
  54. Mu-Chun Wang*, Hsin-Chia Yang, Ren-Hau Yang,Parasitic Effect Degrading Cascode LNA Circuits with 0.18um CMOS Process for 2.4GHz RFID Applications,” (EEIC 2011), Lecture Notes in Electrical EngineeringSpringer(LNEE), vol. 97, Electronics and Signal Processing, pp. 561-569, June, 2011. (EI ; ISSN: 1876-1100)
  55. Mu-Chun Wang*, Hsin-Chia Yang, “A Monopole Scoop-Shape Antenna for 2.4GHz RFID Applications,” (EEIC 2011), Lecture Notes in Electrical EngineeringSpringer(LNEE), vol. 97, Electronics and Signal Processing, pp. 553-560, June, 2011. (EI ; ISSN: 1876-1100).
  56. Mu-Chun Wang*, Hsin-Chia Yang, Wen-Shiang Liao, “MOSFET Performance Manufactured on <100> Silicon Wafer Using CESL Strain Technology with Temperature Effect,” (AEMT2011) Advanced Materials Research (AMR), vol. 287-290, pp.2974-2977, July, 2011. (EI ; ISSN: 1022-6680)
  57. Mu-Chun Wang*, Hsin-Chia Yang, Wen-Shiang Liao, “Performance of Surface Carrier Mobility for Nano-node Strained (110) MOSFETs with Temperature Effect,” (AEMT2011) Advanced Materials Research (AMR), vol. 291-294, pp.3131-3134, July, 2011. (EI ; ISSN: 1022-6680)
  58. Mu-Chun Wang*, Hsin-Chia Yang, “A Non-destructive and Effective Metrology to Automatically Monitor Kink Effect of MOSFETs,” (AEMT2011) Advanced Materials Research (AMR), vol. 291-294, pp.2910-2913, July, 2011. (EI ; ISSN: 1022-6680).
  59. Hsin-Chia Yang*, Mu-Chun Wang, “Extensive 6.0-18.0 GHz Frequency Low Noise Amplifiers Integrated to Form LC-Feedback Oscillators,” (ACAM2011) Advanced Materials Research (AMR), vol. 225-226, pp. 1075-1079, Apr.., 2011. (EI ; ISSN: 1022-6680).
  60. Hsin-Chia Yang*, Mu-Chun Wang, “Evaluation of the Capacitances by Using High Frequency Roll-Off Fitting to the second order approximation,” (IISME2011) Advanced Materials Research (AMR), vol. 204-210, pp. 554-557, Feb. 2011. (EI ; ISSN: 1022-6680)
  61. Hsin-Chia Yang*, Mu-Chun Wang, “Evaluation of the Dielectric by Measuring Leakage Currents on Self-Built Capacitor-Like Devices,” (IISME2011) Advanced Materials Research (AMR), vol. 204-210, pp. 558-562, Feb. 2011. (EI ; ISSN: 1022-6680)
  62. Mu-Chun Wang*, Zhen-Ying Hsieh, Ching-Sung Liao, Chia-Hao Tu, Shuang-Yuan Chen, and Heng-Sheng Huang , ”Effective Edge Width for 65-nm pMOSFETs and Their Variations under CHC Stress,” IEEE/Electron Device Letters (EDL), vol. 32 (5), pp.387-389, May, 2011. (SCI IF 2010: 2.719), Rank: ENGINEERING, ELECTRICAL & ELECTRONIC: 23/245 
  63. Hsin-Chia Yang, Min-Ru Peng, Wen-Shiang Liao, Mu-Chun Wang*, Shuang-Yuan Chen, Heng-Sheng Huang, “Performance of Uni-axial Strained Nano-regime nMOSFETs with CESL Process on <100> Silicon Substrate,” 電子資訊---半導體光電技術專刊, 16 2, pp.38-43, Jan. 2011. (ISSN: 1996796-9)
  64. Mu-Chun Wang*, Hsin-Chia Yang, Hong-Wen Hsu, Zhen-Ying Hsieh, Shuang-Yuan Chen, Shih-Ying Chang, and Chuan-Hsi Liu, “Degradation Mechanism for Continuous-Wave Green Laser-crystallized Polycrystalline Silicon n-Channel Thin-Film Transistors under Low Vertical-Field Hot-Carrier Stress with Different Laser Annealing Powers,” Japanese Journal of Applied Physics (JJAP), vol. 50, pp.04DH16-1~4, Apr., 2011. (SCI IF 2010: 1.024), Rank: PHYSICS, APPLIED: 76/125.
  65. Mu-Chun Wang, Chuan-Hsi Liu*, Kuo-Shu Huang, Zhen-Ying Hsieh, Shuang-Yuan Chen, Hsin-Chia Yang and Chii-Ruey Lin, “Promoting of Charged-Device Model/Electrostatic Discharge Immunity in the Dicing Saw Process,” Microelectronics Reliability, vol. 50, iss.6, pp.839-846, Mar., 2010. (SCI IF 2010: 1.066) (*: corresponding author), Rank: ENGINEERING, ELECTRICAL & ELECTRONIC: 113/247.
  66. Heng-Sheng Huang, Mu-Chun Wang*, Zhen-Ying Hsieh, Shuang-Yuan Chen, Ai-Erh Chuang, and Chuan-Hsi Liu, “Substrate Current Verifying Lateral Electrical Field under Forward Substrate Biases for nMOSFETs,” Solid-State Electronics (SSE), vol.54, iss. 5, pp.527–529, May, 2010. (SCI IF 2008: 1.422) (*: corresponding author), Rank: ENGINEERING, ELECTRICAL & ELECTRONIC: 80/247.
  67. Zhen-Ying Hsieh, Mu-Chun Wang*, Shuang-Yuan Chen, Chih Chen, and Heng-Sheng Huang,Gate-to-drain capacitance verifying the CGLC n-TFT trapped charges distribution under DC voltage stress,” Applied Physics Letters (APL), vol.95, iss. 25, 253503, Dec. 21, 2009 (SCI IF 2008: 3.726) (*: corresponding author)
  68. Zhen-Ying Hsieh, Mu-Chun Wang*, Chih Chen, Jia-Min Shieh, Yu-Ting Lin, Shuang-Yuan Chen, Heng-Sheng Huang, “Trend Transformation of Drain-current Degradation under Drain-avalanche Hot-carrier Stress for CLC n-TFTs,” Microelectronics Reliability, vol. 49, iss. 8, pp. 892-896, June, 17, 2009 (SCI IF 2008: 1.29) (*: corresponding author)
  69. Shuang-Yuan Chen*, Mu-Chun Wang, Shao-Min Ho, Wei-Yi Lin, Yeh-Ning Jou, Heng-Sheng Haung, Layout Dependence of ESD Characteristics on High Voltage LDMOS Transistors,” TamKang Journal of Science and Engineering, V11 N4, pp. 387-394 , Dec. 2008. (EI Journal; ISSN: 1560-6686)
  70. Yuan-Tai Tseng, Yun-Ju Chuang, Yi-Chien Wu, Chung-Shi Yang, Mu-Chun Wang and Fan-Gang Tseng*, “A gold-nanoparticle-enhanced immune sensor based on fiber optic interferometry,” Nanotechnology, vol.19, No. 34,  pp 345501- 1~9, Aug. 2008. (SCI IF 2007: 3.31)
  71. Chiao-Hao Tu*, Shuang-Yuan Chen, Meng-Hong Lin, Mu-Chun Wang, Ssu-Han Wu, Sam. Chou, Joe. Ko, Heng-Sheng Haung, “The Switch of the worst case on NBTI and hot carrier reliability for 0.13 um PMOSFETs,” Applied Surface Science, vol. 254, no. 19, pp.6186-6189, July 2008. (SCI IF 2007: 1.406)
  72. Mu-Chun Wang*, Zhen-Ying Hsieh, Heng-Sheng Huang, and Jon-En Wang, “Dual Fiber-Optic Fabry-Perot Interferometer Strain Sensor with Low-Cost Light-Emitting Diode Light Source,” Optical Engineering, vol. 47, no. 6, pp. 64401-1~-6, June 2008. (SCI IF 2007: 0.757)
  73. Mu-Chun Wang*, Zhen-Ying Hsieh, Yuan-Tai Tseng, Fan-Gang Tseng, Heng-Sheng Huang, Jon-En Wang, and Henry F. Taylor, Dual Fiber-Optic Fabry-Perot Interferometer Temperature Sensor with Low-Cost Light-Emitting Diode Light Source,” Japanese Journal of Applied Physics, vol. 47, no. 4, pp. 3236-3239, April, 2008. (SCI IF 2008: 1.309)
  74. Shuang-Yuan Chen*, Chia-Hao Tu, Jung-Chun Lin, Mu-Chun Wang, Po-Wei Kao, Memg-Hong Lin, Ssu-Han Wu, Ze-Wei Jhou, Sam Chou, Joe Ko, and Heng-Sheng Huang, “Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors of 0.13 um Technology,” Japanese Journal of Applied Physics, vol. 47, no. 3, pp. 1527-1531, March, 2008. (SCI IF 2008: 1.309)
  75. Mu-Chun Wang*, Zhen-Ying Hsieh, Chih Chen, Jia-Min Shieh, Yu-Ting Lin, Shio-Chao Lee, Shuang-Yuan Chen, Heng-Sheng Huang, Visible Light Source Disturbing the Source/Drain Current of CLC Poly-Si n-TFT Device ,” The Electrochemical Society (ECS) Transactions, vol. 16, iss. 9, pp.85-92, Oct, 2008.
  76. Mu-Chun Wang*, Zhen-Ying Hsieh, Yin-Chin Chu, Chih. Chen, Jia-Min Shieh, Yu-Ting LinShio-Chao Lee, Heng-Sheng Huang, Enhanced Drain Current Ripple Variation with Vertical and Horizontal Electrical Fields under Optical Illumination ,” The Electrochemical Society (ECS) Transactions, vol. 16, iss. 9, pp. 93-101, Oct, 2008.
  77. Mu-Chun Wang*, Kuo-Su Huang, Zhen-Ying Hsieh, Heng-Sheng Huang,” Promotion of ESD-CDM Immunity in Dicing Saw Process,” The Electrochemical Society (ECS) Transactions, vol. 13, iss. 2, pp. 219-227, May, 2008.
  78. Mu-Chun Wang*, Zhen-Ying Hsieh, Jon-En Wang, Heng-Sheng Huang,” Dual FFPI Strain Sensor with Low-Cost LED Light Source,” The Electrochemical Society (ECS) Transactions, vol. 13, iss. 25, pp. 13-20, May, 2008.
  79. Mu-Chun Wang*, Zhen-Ying Hsieh, Chia-Hao Tu, Shuang-Yuan Chen, Hung-Wen Chen, Ai-Erh Chuang, Heng-Sheng Huang, Sam Chou, “Extra-Inversion Charge Enhancing Substrate Current During Increased Substrate Bias in 90nm Process,” The Electrochemical Society (ECS) Transactions, vol. 13, iss. 14, pp. 93-100, May, 2008.
  80. 王木俊葉光益、謝禎穎、劉智銓、蔡政村[2005]探討射頻積體電路矽基材單晶片的可行性,” Electron Technology Information magazine (e-科技雜誌), Vol.56, pp24-28, Aug., 2005, Taiwan
  81. 王木俊、徐見英、葉光益、謝禎穎廖御傑[2005]深次微米製程中元件NBTIHCE的可靠性研討,”Electron Technology Information magazine (e-科技雜誌), Vol.55, pp48-52, July, 2005, Taiwan
  82. Mu-Chun Wang*, Hou-Ming Chen, Cheng-Tsun Tsai, Yung-Cehn Chen, and Liang-Te Lu, “A Powerful Electrical Probing Method to Detect the Kink Effect of MOSFET Devices”, Journal of Da-Yeh University, No 1, Vol13, pp23-27, June, 2004, Taiwan.
  83. Mu-Chun Wang*, Hou-Ming Chen, Cheng-Tsun Tsai, Liang-Te Lu, and Yu-Chieh Liao, “Low Phase-Noise CMOS Voltage-Controlled Oscillator for ISM Band”, Journal of Da-Yeh University, No.1, Vol13, pp29-34, June, 2004, Taiwan.
  84. Mu-Chun Wang*, Hou-Ming Chen, Cheng-tsun Tsai, and Jin-Hua Hong,” A Powerful and Sensitive Gauge for Plasma-Process-Induced Damage in Differential Amplifier Circuit Design”, Journal of Da-Yeh University, No.1, Vol12, pp37-41, June, 2003, Taiwan.
  85. Howard T.H. Tang, S. S. Chen, Scott Liu, M. T. Lee, C. H. Liu, M. C. Wang, and M. C. Jeng, “ESD Protection for the Tolerant I/O Circuits using PESD Implantation,J. of Electrostatics, Nos. 3-4, V54, pp293-300, Mar. 2002, USA. (SCI IF 2008: 1.24)
  86. C.J. Huang, Y.C. Liu, M. C. Wang, J.M. Caywood, S.F. Hong, A. Wu, L.C. Hsia, Y.J. Chang, and F.T. Liu “A Novel P-Channel Flash Electrically-Erasable Programmable Read-Only Memory(EEPROM) Cell with Oxide-Nitride-Oxide(ONO) as Split Gate Channel Dielectric”, Japanese Journal of Applied Physics., vol. 40, April, 2001, pp2943-2947. (SCI IF 2008: 1.309)
  87. Mu-Chun Wang, “An Introduction to Plasma Process Induced damage in VLSI process”, 1998 Electronic Monthly, Taiwan, pp112-126, Nov. 1998.

 

【專書】

 

  1. 王木俊/劉傳璽(國立師範大學/機電科技學系副教授): 「薄膜電晶體液晶顯示器原理與實務」 新文京開發出版公司發行 2008 9 ISBN: 978-986-150-944-0 (http://www.wun-ching.com.tw)
  2. 鄭晃忠/劉傳璽主編 (王木俊等合著)新世代積體電路製程技術」東華書局 2011 9ISBN9789574836710

 

 

【研討會論文】

 [生醫與光電相關領域]

【合作對象】: 清華大學/工程與系統科學系、暨南國際大會/應用化學系、交通大學/材料科學與工程研究所、國家奈米實驗室、台北科技大學/機電整合研究所、Phoenix Communication Technology、萬能科技大學/光電工程系

  1. M.C. Wang, Z.Y. Hsieh, H.S. Huang, J.E. Wang,” Dual FFPI Strain Sensor with Low-Cost LED Light Source,” 213th ECS Meeting, J1_1218, May 2008, Phoenix, USA.
  2. Mu-Chun Wang, Zhen-Ying Hsieh, Fan-Gang Tseng, Lih-Gen Sheu, and Heng-Sheng Huang, “Fabrication of Micro Cavity for a Dual FFPI Applying Micro Bio-Sensors,” 2007 IEEE/LEOS 5th Workshop on Fibers and Optical Passive Components (WFOPC 2007), W2A-5, pp.1-3, Dec., Taipei, Taiwan.
  3. Mu-Chun Wang, Zhen-Ying Hsieh, Jon-En Wang, and Henry F. Taylor, “Dual-FFPI Acoustic Sensor with a Low-Cost LED Light Source,” 2007 IEEE/LEOS 5th Workshop on Fibers and Optical Passive Components (WFOPC 2007), TH3B-2, pp.1-3, Dec. 2007, Taipei, Taiwan.
  4. Mu-Chun Wang, Yuan-Tai Tseng, Fan-Gang Tseng, Jon-En Wang, and Henry F. Taylor, Dual-FFPI Temperature Sensor with a Low-Cost LED Light Source,” 2007 International Conference on Solid State Devices and Materials (SSDM2007), pp98-99, Sept. 2007, Tsukuba, Japan.
  5. Mu-Chun Wang, Yuan-Tai Tseng, Zhen-Ying Hsieh, Fan-Gang Tseng, Jon-En Wang, and Henry F. Taylor, “Compensating Temperature Effect in Micro/Nano Bio-Sensor with a Dual FFPI,” 1st IEEE-NANOMED Conference, Aug. 6-9, 2007, Macau, China.
  6. Yuan-Tai Tseng, Yi-Chien Wu, Chung-Shi Yang, Mu-Chun Wang, and Fan-Gang Tseng, “Gold-Nanoparticle Enhanced In-Situ Immunosensor Based on Fiber-Optical Fabry-Perot Interferometry”, 5th IEEE Conference on Nanotechnology, July 11-15, 2005, Nagoya, Japan.
  1. Yuan-Tai Tseng, Ming-Chian Huang, Yi-Chien Wu, Chung-Shi Yang, Mu-Chun Wang, and Fan-Gang. Tseng, “Gold-Nanoparticle Enhanced in-Situ Biosensor Based on Fiber-Optical Fabry-Perot Interferometry”, 13th International Conference on Solid-State Sensors, Actuators and Microsystems, IEEE Transducers’05, pp1764-1767, June 8-12, 2005, Seoul, South Korea.

 

  1. 呂明峰、陳佳鎗、鄭遠東、王木俊、黃文增, “利用週期性介電質波導設計之環形共振分波器,” 2013光電與通訊工程研討會, pp.124-127, 112013, 高雄, 台灣.
  2. Wei-Jhih Jian, Shea-Jue Wang, Chun-Yen Tai, Heng-Sheng Huang, Shuang-Yuan Chen, Mu-Chun Wang, “On the Degradation of Negative Bias Temperature Instability in a-Si:H TFTs,” International Electron Devices and Materials Symposium 2013(2013 IEDMS), PID:74 (P1-04), Nov. 2013, Nantou, Taiwan.
  3. Shea-Jue Wang, Ssu-Hao Peng, You-Ming Hu, Shuang-Yuan Chen, Heng-Sheng Huang, Mu-Chun Wang*, Hsin-Chia Yang*, Chuan-Hsi Liu, “Electrical Performance of a-Si:H and Poly-Si TFTs with Heating Stress,” 2nd 2013 IEEE International Symposium on Next-Generation Electronics (ISNE), pp.309-312, Feb. 2013, Kaohsiung, Taiwan.
  4. Mu-Chun Wang, Ssu-Hao Peng, You-Ming Hu, Shuang-Yuan Chen, Heng-Sheng Huang, Shea-Jue Wang*, Chuan-Hsi Liu, “Electrical Characteristics of Amorphous and Poly-Crystalline Thin-Film Transistors with Temperature Effect,” 2012 IEDMS, paper ID: C007, Nov., 2012, Kaohsiung, Taiwan.
  5. Mu-Chun Wang, Hsin-Chia Yang, Shih-Ying Chang, Yi-Jhen Li, Heng-Sheng Huang, “C-V Analysis and Degradation of HC Stress near Vt Bias for CLC Poly-Si n-TFTs with Laser Annealing Powers,” 2010 International Electron Devices and Materials Symposia (IEDMS), paper number: B1-8, Nov. 2010, Taoyuan, Taiwan.
  6. Shih-Ying Chang, Mu-Chun Wang*, Zhen-Ying Hsieh and Chih Chen, “Degradation Mechanism for CLC Poly-Si n-TFTs under Low Vertical-Field HC Stress with Different Laser Annealing Powers,” 2010 International Conference on Solid State Devices and Materials (SSDM 2010), P-8-16, Sept., 2010, Tokyo, Japan.
  7. Mu-Chun Wang, Zhen-Ying Hsieh, Shih-Ying Chang, Hsin-Chia Yang, Chih Chen, Shuang-Yuan Chen,Analysis of Degradation Mechanism for CLC poly-Si n-TFTs under Voltage Stress with Different Laser Annealing Powers,” 2009 International Electron Devices and Materials Symposia (IEDMS), paper number 231., Nov. 2009, Taoyuan, Taiwan.
  8. Mu-Chun Wang, Zhen-Ying Hsieh, Ren-Hau Yang, Chih Chen, Chia-Hao Tu, Heng-Sheng Huang,Capacitance Analysis on Continuous-wave Green-Laser Crystallization of Thin-film Transistor under Voltage Stresses,” 2009 International Electron Devices and Materials Symposia (IEDMS), paper number 229., Nov. 2009, Taoyuan, Taiwan.
  9. Mu-Chun Wang, Zhen-Ying Hsieh, Hsiu-Yen Yang, Chih Chen, Hsin-Chia Yang, Shuang-Yuan Chen,A Study of CHC Deterioration for CLC n-TFTs under Voltage Stresses,” 2009 International Electron Devices and Materials Symposia (IEDMS), paper number 230., Nov. 2009, Taoyuan, Taiwan.
  10. Mu-Chun Wang, Yin-Chin Chu, Zhen-Ying Hsieh, Shuang-Yuan Chen, “Deterioration Mechanisms of DAHC and CHC Stress at Different Green-Laser Annealing for CLC Poly-Si n-TFTs Illustrating with C-V Characteristics,” 2009 7h Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, pp., May, 2009, Taiwan.
  11. Mu-Chun Wang, Hsiu-Yen Yang, Zhen-Ying Hsieh, “Various Green Laser Annealings Impacting Performance of CLC Poly-Si n-TFTs with C-V Analysis,” 2009 7h Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, pp., May, 2009, Taiwan
  12. Mu-Chun Wang, Yi-Chun Teng, Zhen-Ying Hsieh, Shuang-Yuan Chen, “Trend Shift of Degradation Mechanisms of Various Annealing CLC Poly-Si n-TFTs under DAHC Stress and Temperature Enhancement,” 2009 7h Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, pp., May, 2009, Taiwan
  13. Mu-Chun Wang, Pin-Hsing Chiang, Zhen-Ying Hsieh, “Investigation of Positive Bias Temperature Instability in CLC Poly-Si n-TFTs under Different Laser Anneals,” 2009 7h Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, pp., May, 2009, Taiwan.
  14. Mu-Chun Wang, Hsiang-Lin Yang, Zhen-Ying Hsieh, “Investigation of Temperature Effect Transferring Electrical Characteristics of Different Annealing CLC Poly-Si n-TFTs,” 2009 7h Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, pp., May, 2009, Taiwan.
  15. Mu-Chun Wang, Shih-Ying Chang, Zhen-Ying Hsieh, “Investigation of DAHC Degradation for CLC Poly-Si n-TFTs with Tunable Green Laser Activation Energy,” 2009 7h Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, pp., May, 2009, Taiwan.
  16. Mu-Chun Wang, Chen-Jung Su, Zhen-Ying Hsieh, “Analysis of CHC Degradation for CLC TFTs with Adjustable Green Laser Activation,” 2009 7h Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, pp., May, 2009, Taiwan.
  17. Mu-Chun Wang, Zhen-Ying Hsieh, Chiao-Hao Tu, Shuang-Yuan Chen, Heng-Sheng Huang, “Analysis of Trap Charges with CLC Thin Film Transistor under DC stress,” 2009 7h Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, pp., May, 2009, Taiwan.
  18. Mu-Chun Wang, Yin-Chin Chu, and Zhen-Ying Hsieh,” Deterioration Mechanisms of DAHC and CHC Stress for CLC Poly-Si n-TFTs Illustrating with C-V Characteristics,” 2009 International Academic Conference at Ming-Chuan University, Electronic Group, pp.97-104, Mar. 2009, Taoyan, Taiwan.
  19. Mu-Chun Wang, Shih-Ying Chang, and Zhen-Ying Hsieh,” Investigation of Transfer of the Degradation Mechanism on DAHC Reliability for CLC Poly-Si n-TFTs with Green-Laser Activation,” 2009 International Academic Conference at Ming-Chuan University, Electronic Group, pp.105-113, Mar. 2009, Taoyan, Taiwan.
  20. Mu-Chun Wang, Yi-Chun Teng, and Zhen-Ying Hsieh,” Trend Shift of Degradation Mechanisms of CLC Poly-Si n-TFTs under DAHC Stress and Temperature Enhancement,” 2009 International Academic Conference at Ming-Chuan University, Electronic Group, pp.114-122, Mar. 2009, Taoyan, Taiwan.
  21. Mu-Chun Wang, Pin-Hsing Chiang, and Zhen-Ying Hsieh,” Investigation of Degradation Mechanism of CLC n-TFTs under High Field and Temperature Stress,” 2009 International Academic Conference at Ming-Chuan University, Electronic Group, pp. 40-48, Mar. 2009, Taoyan, Taiwan.
  22. Mu-Chun Wang, Hsiu-Yen Yang, and Zhen-Ying Hsieh,” Analysis of Efficiency of CLC Poly-Si n-TFTs under Green-Laser and Furnace Activations,” 2009 International Academic Conference at Ming-Chuan University, Electronic Group, pp.49-56, Mar. 2009, Taoyan, Taiwan.
  23. Mu-Chun Wang, Chen-Jung Su, and Zhen-Ying Hsieh,” A Study of Switch of CHC Reliability Degradation for CLC Poly-Si n-TFTs with Temperature Enhancement,” 2009 International Academic Conference at Ming-Chuan University, Electronic Group, pp.89-96, Mar. 2009, Taoyan, Taiwan.
  24. Mu-Chun Wang, Hsiang-Lin Yang, and Zhen-Ying Hsieh,” Investigation of Channel Current and Temperature Effect Transferring Electrical Characteristics of CLC Poly-Si n-TFTs,” 2009 International Academic Conference at Ming-Chuan University, Electronic Group, pp.57-65, Mar. 2009, Taoyan, Taiwan.
  25. Mu-Chun Wang, Zhen-Ying Hsieh, Yin-Chin Chu, Chih Chen, Hung-Wen Chen, Chia-Hao Tu, Shuang-Yuan Chen, Shio-Chao Lee, Heng-Sheng Huang,C-V Characteristics of DAHC and CHC Stress for CLC Poly-Si n-TFTs,” 2008 International Electron Devices and Materials Symposia (IEDMS), CP555, pp.1-4, Nov. 2008, Taichung, Taiwan.
  26. Mu-Chun Wang, Zhen-Ying Hsieh, Hsiu-Yen Yang, Chih Chen, Yu-Ting Lin, Shio-Chao Lee, Jia-Min Shieh, Heng-Sheng Huang, “Performance of Green-Laser and Furnace Activations for CLC Poly-Si n-TFTs,” 2008 International Electron Devices and Materials Symposia (IEDMS), CP536, pp.1-4, Nov. 2008, Taichung, Taiwan.
  27. Mu-Chun Wang, Zhen-Ying Hsieh, Shih-Ying Chang, Chih Chen, Chia-Hao Tu, Shuang-Yuan Chen, Shio-Chao Lee, Heng-Sheng Huang, “The Switch of the Worse Case on DAHC Reliability for CLC poly-Si n-TFTs with Green-Laser Activation,” 2008 International Electron Devices and Materials Symposia (IEDMS), AP538, pp.1-4, Nov. 2008, Taichung, Taiwan.
  28. Zhen-Ying Hsieh, Mu-Chun Wang, Yi-Chun Teng, Chih Chen, Yu-Ting Lin, Shio-Chao Lee, Jia-Min Shieh, Heng-Sheng Huang, “Temperature Effect Healing DAHC Stress for CLC Poly-Si n-TFTs,” 2008 International Electron Devices and Materials Symposia (IEDMS), FP551, pp.1-4, Nov. 2008, Taichung, Taiwan.
  29. Zhen-Ying Hsieh, Mu-Chun Wang, Pin-Hsing Chiang, Chih Chen, Hung-Wen Chen, Shuang-Yuan Chen, Shio-Chao Lee, Heng-Sheng Huang, “CLC n-TFTs Deterioration under High Field-and-Temperature Stress,” 2008 International Electron Devices and Materials Symposia (IEDMS), FP534, pp.1-4, Nov. 2008, Taichung, Taiwan.
  30. Shio-Chao Lee, Mu-Chun Wang, Zhen-Ying Hsieh, Chen-Jung Su, Chih Chen, Yu-Ting Lin, Jia-Min Shieh, Heng-Sheng Huang, “Transformation of the Worst Case of CHC Reliability for CLC Poly-Si TFTs with Temperature Effect,” 2008 International Electron Devices and Materials Symposia (IEDMS), AP560, pp.1-4, Nov. 2008, Taichung, Taiwan.
  31. Shio-Chao Lee, Mu-Chun Wang, Zhen-Ying Hsieh, Hsiang-Lin Yang, Chih Chen, Yu-Ting Lin, Shuang-Yuan Chen, Heng-Sheng Huang, “Characteristic Transition of CLC Poly-Si n-TFTs Enhanced by Surface Current and Temperature Effects,” 2008 International Electron Devices and Materials Symposia (IEDMS), AP535, pp.1-4, Nov. 2008, Taichung, Taiwan.
  32. Mu-Chun Wang, Zhen-Ying Hsieh, Chih. Chen, Yu-Ting Lin, Chia-Hao Tu, Shuang-Yuan Chen, Shio-Chao Lee, Heng-Sheng Huang, “Analysis of GIDL Effect and C-V Characteristic on CLC Poly-Si n-TFT Device,” 2008 International Electron Devices and Materials Symposia (IEDMS), FP355, pp.1-3, Nov. 2008, Taichung, Taiwan.
  33. M.C. Wang, Z.Y. Hsieh, C. Chen, J.M. Shieh, Y.T. Lin, H.S. Huang, Positive-Bias Temperature Instability Effect on CLC TFTs,” 4th Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-4), pp.298, Oct. 2008, Matsue City, Japan.
  34. M.C. Wang, Z.Y. Hsieh, C. Chen, J.M. Shieh, Y.T. Lin, H.S. Huang, Enhanced Drain Current with Vertical and Horizontal Electrical Fields under Temperature Effect on CLC TFTs,” 4th Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-4), pp.406, Oct. 2008, Matsue City, Japan.
  35. M.C. Wang, Z.Y. Hsieh, C. Chen, J.M. Shieh, Y.T. Lin, C.R. Lin, Channel Hot-Carrier Effect on CLC n-TFTs,” 4th Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-4), pp. 78, Oct. 2008, Matsue City, Japan.
  36. M.C. Wang, Z.Y. Hsieh, C. Chen, J.M. Shieh, Y.T. Lin, S.Y. Chen, Drain-Avalanche Hot-Carrier Effect under Temperature Variation on CLC TFTs ,” 4th Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-4), pp.141, Oct. 2008, Matsue City, Japan.
  37. M.C. Wang, Z.Y. Hsieh, C. Chen, J.M. Shieh, Y.T. Lin, H.S. Huang, Visible Light Source Disturbing the Source/Drain Current of CLC Poly-Si n-TFT Device,” 214th ECS Meeting, E13_2269, Oct. 2008, Honolulu, USA.
  38. M.C. Wang, Z.Y. Hsieh, Y.C. Chu, C. Chen, J.M. Shieh, Y.T. Lin, Enhanced Drain Current Ripple Variation with Vertical and Horizontal Electrical Fields under Optical Illumination,” 214th ECS Meeting, E13_2270, Oct. 2008, Honolulu, USA.

 

[IC設計相關領域]

【合作對象】: 友旺科技公司、聯發科技公司、台大RF ID教育暨研發實驗資源中心、台北科技大學/機電整合研究所

  1. Hsuan Chang, Fu-Kuo Hsu, Yang-Shine Lee and Mu-Chun Wang*, “A Prototype of Mini-wireless Remote Monitoring Control System Applied to Delicate Agriculture,” International Conference on Earth Observations and Societal Impacts, 2018 (ICEO&SI 2018), PID: PS-01 July 2018, Hsinchu, Taiwan.
  2. Hsin-Chia Yang, Ssu-Hao Peng, Shea-Jue Wang*, Mu-Chun Wang*, Chun-Wei Lian, Jie-Min Yang, Hung-I Chin, Chuan-Hsi Liu, “High Quality of 0.18um CMOS 5.2GHz Cascode LNA for RFID Tag Applications,” 2nd 2013 IEEE International Symposium on Next-Generation Electronics (ISNE), pp.313-316, Feb. 2013, Kaohsiung, Taiwan.
  3. Hsin-Chia Yang, Jui-Ming Tsai, Jhe-Chuan Yeh, Cheng-Huang Tsao, Sungching Chi, Tsing-Yung Chang, Mu-Chun Wang, “Promising Low Noise Amplifiers Using 90nm CMOSFET Devices,” IEEE/ 8th International Conference on Wireless Communications, Network and Mobile Computing (WiCOM 2012), Sept. 2012, Shanghai, China.
  4. 王木俊*張敬宗吳國維、楊信佳、陳肇業,“0.18微米製程2.4GHz高輸出增益與低雜訊指數疊接式低雜訊放大器整合於RFID晶片”2012電子工程技術研討會, 高雄, 台灣, 61 2012.
  5. 王木俊*彭思豪吳國維、楊信佳、陳肇業,“0.18微米製程5.2/5.8GHz高增益與絕佳隔離之疊接式低雜訊放大器應用於射頻鑑別系統”2012電子工程技術研討會, 高雄, 台灣, 61 2012. (口頭優秀論文獎)
  6. Mu-Chun Wang*, Ssu-Hao Peng, Hsin-Chia Yang, Tsao-Yeh Chen, “2.4GHz High Gain and High Isolation of Cascade Low Noise Amplifier in RFID,” 10th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, System Design Group, paper number D16., May, 2012, Taiwan.
  7. Hsin-Chia Yang, Chuei-Tang Wang, Ming-Der Chang, Mu-Chun Wang, Sungching Chi,3.5 GHz to 10.0 GHz Mixers of High Gain and Good Isolations,” IEEE/ 7th International Conference on Wireless Communications, Network and Mobile Computing (WiCOM 2011), pp.1-3, Sept., 2011, Wuhan, China
  8. Ming-Te Chang*, Kan-Tse Yeh, Hsin-Chia Yang, Mu-Chun Wang, “6.0-10.1 GHz High-Gain Mixer,” 9th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, System Design Group, paper number D17., May, 2011, Taiwan.
  9. Jhe-Chuen Yeh*, Hsin-Chia Yang, Kan-Tse Yeh, Mu-Chun Wang, “12GHz~ 18GHz High Gain Low Noise Amplifier,” 9th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Signal and System Group, paper number E11., May, 2011, Taiwan.
  10. Chang-Chih Hsieh, Ren-Hau Yang, Hsin-Chia Yang, Kuo-Hua Wu, and Mu-Chun Wang*, Miniaturization of Cascode Low-Noise Amplifier with 0.18um CMOS Process for 2.4GHz RFID,” 2010 Asia Pacific International Conference on RFID (APICOR), paper number 46, Dec., 2010, Taipei, Taiwan.
  11. Chang-Chih Hsieh, Yi-Jhen Li, Hsin-Chia Yang, Ren-Hau Yang, and Mu-Chun Wang*, “Minimizing Size of Cascade Low-Noise Amplifier with 0.18um CMOS Process for 2.4GHz RFID,” 2010 Asia Pacific International Conference on RFID (APICOR), paper number 38, Dec., 2010, Taipei, Taiwan.
  12. Mu-Chun Wang*, Long-Sian Lin, Chang-Chih Hsieh, and You-Ming Hu, “Optimization of First-Stage cascode Low-Noise Amplifier with 0.18um CMOS Process for 2.4GHz RFID Applications,” 2010 Asia Pacific International Conference on RFID (APICOR), paper number 54, Dec., 2010, Taipei, Taiwan.
  13. Hsin-Chia Yang, Yao-Yuan Hoe, Ming-Feng Lu, Mu-Chun Wang*, You-Ming Hu, “Contrivance and Proof of Ladder-Like Antenna for 2.46GHz RFID Applications,” 2010 Asia Pacific International Conference on RFID (APICOR), paper number 53, Dec., 2010, Taipei, Taiwan.
  14. Hsin-Chia Yang, Yao-Yuan Hoe, Ming-Feng Lu, Mu-Chun Wang*, You-Ming Hu, “Design and Proof of Spiral-Like Antenna for 2.45GHz RFID Tag Applications,” 2010 Asia Pacific International Conference on RFID (APICOR), paper number 50, Dec., 2010, Taipei, Taiwan.
  15. Hsin-Chia Yang, Yi-Cheng Luo, Ming-Feng Lu, Mu-Chun Wang*, You-Ming Hu, “Clamp-Like Planar Antenna for 2.45GHz RFID Tag Applications,” 2010 Asia Pacific International Conference on RFID (APICOR), paper number 52, Dec., 2010, Taipei, Taiwan.
  16. Hsin-Chia Yang, Ming-Der Chang, Kan-Tse Yeh, Sungching Chi, Mu-Chun Wang, Chuei-Tang WangPromising 5.0-16.0 GHz CMOS-Based Oscillators with Tuned LC Tank,” IEEE/ 6th International Conference on Wireless Communications, Network and Mobile Computing (WiCOM 2010), Sept., 2010, Chengdu, China
  17. Mu-Chun Wang, Ren-Hau Yang, Zhen-Ying Hsieh, Hsin-Chia Yang, Chii-Ruey Lin, “Promising Cascade Low-Noise Amplifier with 0.18 um CMOS Process for 2.4GHz RFID,” 2009 Asia Pacific International Conference on RFID (APICOR), paper number 57, Dec., 2009, Taipei, Taiwan.
  18. Mu-Chun Wang, Ting-Yu Yang, Zhen-Ying Hsieh, Hsin-Chia Yang, Chuan-Hsi Liu, Chii-Ruey Lin, “Optimization of Solderability for 2.4GHz RF Printed-Circuit-Board Products,” IEEE/IMPACT, pp.227-230, Oct., 2009, Taipei, Taiwan
  19. Mu-Chun Wang, Zhen-Ying Hsieh, Yin-Chin Chu, Hsiu-Yen Yang, “Contrivance and Proof of FET-Shape Micro-Strip Antenna Applied at 2.45GHz RFID Tags,” 2009 Cross Strait Tri-regional Radio Science and Wireless Technology Conference, pp , Aug., 2009, Tianjin, China.
  20. Mu-Chun Wang, Hsiu-Yen Yang, Yin-Chin Chu, Zhen-Ying Hsieh, “Design and Proof of Pseudo Z-Shape Antenna Applied at 2.45 GHz RFID Tags,” 2009 Cross Strait Tri-regional Radio Science and Wireless Technology Conference, pp , Aug., 2009, Tianjin, China.
  21. Mu-Chun Wang, Shih-Ying Chang, Zhen-Ying Hsieh, Chen-Jung Su, “First-Stage Cascode Ultra-Low-Noise Amplifier with 0.18m CMOS Process for 2.4GHz RFID Applications,” 2009 Cross Strait Tri-regional Radio Science and Wireless Technology Conference, pp , Aug., 2009, Tianjin, China. (優秀論文獎)
  22. Mu-Chun Wang, Zhen-Ying Hsieh, Chiao-Hao Tu, Shuang-Yuan Chen, Heng-Sheng Huang, “A High Power-added Efficiency of Power Amplifier for 2.4GHz RFID Applications Embedded with 0.18 m CMOS Process,” 2009 Cross Strait Tri-regional Radio Science and Wireless Technology Conference, pp , Aug., 2009, Tianjin, China. (優秀論文獎)
  23. 王木俊、謝禎穎、涂家豪、黃恆盛, “0.25微米CMOS E-級功率放大器應用於2.4GHz RF ID傳輸之模擬,”  2009 RFID科技產業應用研討會,論文序號 86, pp. 1-4, 18-9, 台北, 台灣.
  24. 王木俊、謝禎穎、涂家豪、黃恆盛, “0.25微米CMOS低雜訊壓控振盪器應用於2.4GHz RF ID傳輸之模擬,”  2009 RFID科技產業應用研討會, 論文序號 87, pp. 1-4, 18-9,, 台北, 台灣.
  25. Mu-Chun Wang, Zhen-Ying Hsieh, Chung-Hsin Kuo, Chun-Wei Huang, Shuang-Yuan Chen, “Simulation and Improvement of 5GHz Power Divider on FR-4 PCB,” 2008 ASME/ International Conference and Exhibition on Integration and Commercialization of Micro and Nano-systems, MNC-2008_70090, June, 2008, Hong-Kong, China.
  26. Mu-Chun Wang, Zhen-Ying Hsieh , Shu-Han Chao, Chia-Hao Tu, Shuang-Yuan Chen, “Correcting Front-end RF Impedance Mismatch for 2.4 GHz Wireless Long-Distance Data Transmission,” 2008 ASME/ International Conference and Exhibition on Integration and Commercialization of Micro and Nano-systems, MNC-2008_70092, June, 2008, Hong-Kong, China.
  27. Mu-Chun Wang, Zhen-Ying Hsieh ,Ting-Yu Yang, Chia-Hao Tu, Shuang-Yuan Chen, “Improvement of Printed Circuit Board Assembly Process in 2.4 GHz RF Circuit Products,” 2008 ASME/ International Conference and Exhibition on Integration and Commercialization of Micro and Nano-systems, MNC-2008_70093, June, 2008, Hong-Kong, China.
  28. 王木俊、趙書漢、鄧怡群, “射頻電路的阻抗匹配對長距離資料傳輸之影響,” 2008 第六屆微電子技術發展與應用研討會, 系統元件組, pp.379-386, 五月, 2008, 高雄 台灣.
  29. 王木俊、楊婷伃、江品姓,2.4GHz射頻電路印刷電路板組裝之製程改良,” 2008 第六屆微電子技術發展與應用研討會, 半導體封裝組, pp.316-322, 五月, 2008, 高雄 台灣.
  30. 王木俊 、郭宗信、朱瑩鈞, “FR-4印刷電路板上5GHz功率分工器之改良,” 2008 第六屆微電子技術發展與應用研討會, 系統元件組, pp. 372-378, 五月, 2008, 高雄 台灣.
  31. Mu-Chun Wang, Zhen-Ying Hsieh, Hui-Fang Lee, Shuang-Yuan Chen, Heng-Sheng Huang, “Design and Verification of Front-end Transmitter and Receiver Module for 2.4GHz Wi-Fi Application,” 2007 Cross Strait Tri-regional Radio Science and Wireless Technology Conference, pp169-173, Aug., 2007, Anwei, China.
  32. Mu-Chun Wang, Hui-Fang Lee, Zhen-Ying Hsieh, Shuang-Yuan Chen, Heng-Sheng Huang, “Design and Verification of a Monopole Trench-Shape Antenna for 2.4GHz Wi-Fi Applications,” 2007 Cross Strait Tri-regional Radio Science and Wireless Technology Conference, pp185-189, Aug., 2007, Anwei, China.
  33. Mu-Chun Wang, Zhen-Ying Hsieh, Cheng-Yi Ke, Shuang-Yuan Chen, Heng-Sheng Huang,” A 5.8GHz Band-Pass Filter with an Active Inductor through 0.18um Full- CMOS Process for Wireless Transceivers,” 2007 ASME/ International Conference on Integration and Commercialization of Micro and Nano-systems, Mico and Nano Devices, MNC-2007_21085, Jan., Sanya, China.
  34. Mu-Chun Wang, Zhen-Ying Hsieh, Chieu-Ying Hsu, Shuang-Yuan Chen, Heng-Sheng Huang,” A 2.4-GHz 0.18 µm Full-CMOS Single-Stage Class-E Power Amplifier with Temperature Effect for ISM Band Wireless Communication,” 2007 ASME/ International Conference on Integration and Commercialization of Micro and Nano-systems, Mico and Nano Devices, MNC-2007_21086, Jan., Sanya, China.
  35. Mu-Chun Wang, Zhen-Ying Hsieh, Chien-Chih Chen, Shuang-Yuan Chen, Heng-Sheng Huang,” Design of a 0.18um Stable Non-Volatile Boost Circuit in High/Low Temperature Operation,” 2007 ASME/ International Conference on Integration and Commercialization of Micro and Nano-systems, Mico and Nano Devices, MNC-2007_21083, Jan., Sanya, China.
  36. Mu-Chun Wang, Cheng-Yi Ke, Yi-Chang Cheng, and Chien-Chih Chen, “A 5.2GHz Band-pass Filter with an Active Inductor under 0.18 um Full-CMOS Process for Wireless Transceivers,” 2006 Cross Strait Tri-regional Radio Science and Wireless Technology Conference, pp.288-291, Aug., 2006, Macau, China.
  37. Mu-Chun Wang, Cheng-Yi Ke, Yi-Chang Cheng, and Chien-Chih Chen, “Temperature Impact to a 2.4GHz Band-Pass Filter with an Active Inductor under 0.18um CMOS Process for ISM Band Wireless Communication,” 2006 Cross Strait Tri-regional Radio Science and Wireless Technology Conference, pp.292-295, Aug., 2006,Macau, China.
  38. Mu-Chun Wang, Chien-Chih Chen, Jun-Ye Jhong, Cheng-Yi Ke, and Chieu-Ying Hsu, “Design of a 0.18um Non-Volatile Boost Circuit,” International Academic Conference at Ming-Chuan University, Electronic Group, pp.17-24, Mar., 2006, Taoyan, Taiwan.
  39. Mu-Chun Wang, Chieu-Ying Hsu, Chun-Ya Chuang, Racy J-H Cheng, and Ming Hsian Weng, “A 2.4GHz Class-E Power Amplifier with 0.18 um Dual-Gate Full- CMOS Process for ISM Band Wireless Communication,” International Academic Conference at Ming-Chuan University, Electronic Group, pp.85-91, Mar., 2006, Taoyan, Taiwan.
  40. Mu-Chun Wang, Cheng-Yi Ke, Jun-Ye Jhong, Chien-Chih Chen, Wu-Jie Wen, “A 2.4GHz Band-pass Filter with an Active Inductor under 0.18μm CMOS Process for ISM Band Wireless Communication,” International Academic Conference at Ming-Chuan University, Computer and Communication Group, pp.28-35, Mar., 2006, Taoyan, Taiwan.
  41. Mu-Chun Wang, Guang-Yi Yeh, Yi-Chang Cheng, Hsin-Chia Yang, Chieu-Ying Hsu, “A 2.4GHz Class-E Full CMOS Power Amplifier with Quarter-micron Process for ISM Band Wireless Communication,” 2005 International Academic Conference at Ming-Chuan University, Electronic Group, pp41-47, Mar., 2005, Taiwan.
  42. Kuo-Yu Chan, Yi-Chang Cheng, Hsin-Chia Yang, Mu-Chun Wang, and Chung-Chih Chi, “Design and Simulation 2.4GHz CMOS Down-Conversion Double Balanced Mixer for Wireless Communication,” 2005 International Academic Conference at Ming-Chuan University, Electronic Group, pp29-36, Mar., 2005, Taiwan.
  43. Mu-Chun Wang, Hou-Ming Chen, Yu-Chieh Liao, and Cheng-Tsun Tsai, “Full-CMOS 2.4-GHz Low-Noise Amplifier for ISM-Band Wireless Communication,” 2004 Cross Strait Tri-regional Radio Science and Wireless Technology Conference, ppD2-1~D2-5, Sept., 2004, Taiwan.
  44. Yi-Chang Cheng and Mu-Chun Wang, “Design of the 2.4GHz CMOS Microwave Mixer”, Proceedings of the 2004 China-Japan Joint Meeting on Microwaves, pp159-161, Aug., 2004, China.
  45. J.-H. Hong, Y.-C. Chen, M.-K. Chen, and M.-C. Wang, “Low Voltage Swing Bus Driver with Charge Recycling Technique,” in Proc. 13th VLSI Design/CAD Symp., pp. 117-120, Aug., 2002, Taiwan.

 

[半導體製程與元件相關領域]

【合作對象】: 聯華電子公司、華邦電子公司、矽品精密工業公司、晶揚科技公司、台北科技大學/機電整合研究所、師大/機電工程學系、高雄科技大學/電子工程系、高雄大學/電機所

  1. 鄭美媛、沈添賜、郭瑨銨、何沅錚、鍾子文、王木俊*, “28 nm節點I/O HK/MG nMOSFETs在不同溫度DPN製程處理下之基底偏壓效應”, 2023工程科技術應用研討會, 12012023,新竹,台灣.
  2. 鄭美媛、何沅錚、汪晏詮、鍾子文、王木俊*, “不同氮濃度DPN製程處理下28 nm節點I/O HK/MG nMOSFETs之基底偏壓效應”, 2023工程科技術應用研討會, 12012023,新竹,台灣.
  3. 鄭美媛、李凱翔、許雅筑、王木俊*, “基底偏壓效應探究28 nm節點I/O HK/MG nMOSFETs在不同退火溫度和氮濃度DPN製程處理下之電特性”, 2023工程科技術應用研討會, 12012023,新竹,台灣.
  4. Tsung-Min Yang, Ming-Chang Shih, Mu-Chun Wang, Ta-Yu Chen, Chia-Lung Hsu, Jung-Tai Chung, Chien-Jung Huang, Wen-How Lan*, “Study of Enlarged Field Enhancement Factor for Carbon Nanotubes on Millimeter Scaled Platform12th IEEE&13th ICSEVEN 2023, P20230813284121, Nov. 8-12, 2023, Bangkok, Thailand.
  5. Cheng-Hsun-Tony Chang, Jin-An Kuo, Mei-Yuan Zheng, Wen-How Lan, and Mu-Chun Wang*, “C-V Characteristics of Nano-node HK/MG nMOSFETs with LDD and SDE implantation,” 12th IEEE&13th ICSEVEN 2023, P20230717536653, Nov. 8-12, 2023, Bangkok, Thailand.
  6. Jin-An Kuo, Mei-Yuan Zheng, Wen-How Lan, and Mu-Chun Wang*, “Back-bias Effect of Nano-node HK/MG nMOSFETs under Different Nitrogen Concentration of DPN Process Treatment,” 12th IEEE&13th ICSEVEN 2023, P20230717179337, Nov. 8-12, 2023, Bangkok, Thailand.
  7. Shou-Yen Chao, Ming-Han Wang, Mei-Yuan Zheng, Jin-An Kuo, Wen-How Lan, Yuan-Jheng He, and Mu-Chun Wang*, “Substrate Bias Effect of 28 nm-node HK/MG nMOSFETs with DPN Temperature Treatments,” IEEE WiPDA-Asia 2023, PID:230019, Aug. 27-29, 2023, Hsinchu, Taiwan.
  8. Yu-Chun Lin; Shou-Yen Chao; Ping-Chen Chou; Kuang-Wen Cheng; Zi-Wen Zhon; Wen-How Lan; Mu-Chun Wang*, “Amplification Gain of Nano-node Channel-width nMOSFETs with Thermal Annealing Treatments of DPN Processes,” 3rd IEEE International Conference on Electronic Communications, Internet of Things and Big Data 2023 (IEEE ICEIB 2023), PID: B230012, Apr. 14-16, 2023, Taichung, Taiwan.
  9. Jia-You Xu; Tien-Szu Shen; Wei-Lun Chu; Zhi-Kai Chen; Hao-Lun Hu; Ming-Han Wang; Mu-Chun Wang*, “Gain Efficiency of 28 nm-node Various Channel-width pMOSFETs under Nitrogen Concentration of DPN Treatment,” 3rd IEEE International Conference on Electronic Communications, Internet of Things and Big Data 2023 (IEEE ICEIB 2023), PID: B230013, Apr. 14-16, 2023, Taichung, Taiwan.
  10. Jian-Guo Huang; Cheng-Hsun-Tony Chang; Ming-Han Wang; Guo-Xuan Qiu; Mei-Yuan Zheng; Mu-Chun Wang*, “Dit Extraction of Nano-node HK/MG nMOSFETs Treated with DPN Process under Diverse Nitrogen Concentration,” 3rd IEEE International Conference on Electronic Communications, Internet of Things and Big Data 2023 (IEEE ICEIB 2023), PID: B230115, Apr. 14-16, 2023, Taichung, Taiwan. (最佳論文獎)
  11. Yong-Yu Chen, Ming-Chang Shih, Kara Hsu, Mu-Chun Wang, Hsin-Hui Kuo, David Jui-Yang Feng, Chien-Jung Huang, Wen-How Lan*, “Degradation Study of RhB with Ag3PO4-Na2SiO3 under Visible Light,” 11th IEEE & 12th ICSEVEN 2023, PID: P20230215158689, Apr. 12-16, 2023, Osaka, Japan.
  12. Yueh-Ting Tsou, Jia-You Xu, Wen-Ying Hsieh, Zen-Yu Lai, Hao-Lun Hu, and Mu-Chun Wang*, “Voltage Gain of 28nm-node Various Channel-width pMOSFETs under Thermal Annealing Treatments of DPN Processes,” 10th IEEE & 11th ICSEVEN 2022, PID: O20221125810954, Jan. 11-15, 2023, Hanoi, Vietnam. (口頭最佳論文獎)
  13. Cheng-Hsun-Tony Chang, Yu-Chun Lin, Yu-Chen Kuo, Zu-En Chou, Zi-Wen Zhon, Wen-How Lan, and Mu-Chun Wang*, “Gain Performance of Nano-node Channel-width nMOSFETs Treated by DPN Processes with Various Nitrogen Concentrations,” 10th IEEE & 11th ICSEVEN 2022, PID: P20221125135242, Jan. 11-15, 2023, Hanoi, Vietnam.
  14. 田士瑋、彭唯軒、蔡逸馨、唐子媛、鍾子文、王木俊*, “奈米HK/MG nMOSFET元件在不同氮化退火溫度與高/低汲極電場下之通道調變效應, 2022工程科技術應用研討會, 12022022,新竹,台灣.
  15. Wei-Lin Su, Mu-Chun Wang, Hsin-Hui Kuo, David Jui-Yang Feng, Chien-Jung Huang, Wen-How Lan, “A Model for the Frequency Dispersion of p-type Si/Ga2O3 Capacitance and Conductance in Accumulation,” 10th IEEE & 11th ICSEVEN 2022, PID: P20220916167818, Jan. 11-15, 2023, Hanoi, Vietnam.
  16. Yueh-Ting Tsou, Tsai-Sheng Cheng, Wen-Ying Hsieh, Zi-Wen Zhon, Wen-How Lan*, and Mu-Chun Wang*, “λ-factor of Nano-node HK/MG nMOSFETs with DPN Different Annealing Temperatures,” IEDMS2022, PID:5210, Oct. 27-28, 2022, Nantou, Taiwan.
  17. Yu-Chun Lin, Zi-Wen Zhong, Cheng-Hsun-Tony Chang, Shou-Kong Fan, Mu-Chun Wang*, “Electrical Performance of 28nm-node Long/Short Channel-width nMOSFETs under DPN Nitridation Treatment,” 9th IEEE & 10th ICSEVEN 2022, PID: P20220520460521, June 23-26, Yilan, Taiwan.
  18. Jia-You Xu, Hao-Lun Hu, Chun-Yeon Lin, Wen-How Lan, Mu-Chun Wang*, “Electrical Characteristics of 28nm-node Small p-channel MOSFETs with High-k/Metal Gate Processes,” 9th IEEE & 10th ICSEVEN 2022, PID: P20220520109005, June 23-26, Yilan, Taiwan.
  19. Wei-Cheng Lu, Ming-Chang Shih, David Jui-Yang Feng, Hsin-Hui Kuo, Wei-Lin Su, Mu-Chun Wang, Chien-Jung Huang, Wen-How Lan*, “Reduction Study of MB with Ag3PO4/Na2SiO3,” 9th IEEE & 10th ICSEVEN 2022, PID: P20220508814723, June 23-26, Yilan, Taiwan.
  20. 陳冠穎、吳政霖、吳怡燁、王明翰、王木俊*,奈米製程之DIBL效應量測技術探討”  2022第十屆全國電子設計創意競賽暨學術研討會, PID: A009, 3262022,高雄,台灣.
  21. 陳志龍、黃聖淮、蔡旻翰、王明翰、王木俊*,奈米nMOSFET中閘級電場對通道等效遷移率之影響”  2022第十屆全國電子設計創意競賽暨學術研討會, PID: A011, 3262022,高雄,台灣.(最佳論文獎)
  22. 黃建國、鍾子文、胡皓倫、王明翰、王木俊*,奈米等級nMOSFETsnFinFETsDIBL效應比較與探討”  2022第十屆全國電子設計創意競賽暨學術研討會, PID: A013, 3262022,高雄,台灣.
  23. 陳在泩、沈添賜、張智傑、王木俊*, “28奈米HK/MG製程在不同氮化退火溫度下I/O nMOSFET閘極氧化層品質均勻性分析”2021工程科技術應用研討會, 12172021,新竹,台灣.
  24. Wan-Chun Yang, David Jui-Yang Feng, Hsin-Hui Kuo, Hui-Jun Hong, Wen-How Lan, Mu-Chun Wang, Chien-Jung Huang, “Anneal Effect of Bi2MoO6/SnOx:N to the Degradation of RhB under Visible Light Irradiation” 8th IEEE & 9th The International Conference on Science, Education and Viable Engineering (8th IEEE ICSEVEN 2021), Oct. 28-31, Taitung, Taiwan.
  25. Mu-Chun Wang*, Cheng-Hsun-Tony Chang, Hao-Lun Hu, Zi-Wen Zhong, Guo-Xuan Qiu, Wen-How Lan*, “Channel Surface Integrity with 2.4nm High-k Gate Dielectric under DPN Treatment at Different Annealing Temperatures,” 9th IEEE International Symposium on Next-Generation Electronics (ISNE 2021), July10-11, Changsha, China.
  26. 卓永興、張永義、王彥翔、朱偉綸、王木俊*,以轉導觀點探究3D nMESFETIII-V 3D nMOSFET之優劣”  2021第十七屆全國電子設計創意競賽暨學術研討會, PID: A08, 4102021,高雄,台灣.
  27. 葉佳衡、吳得瑋、朱偉綸、王木俊*,奈米SOI n-型鰭式電晶體在閘極電場偏壓下之爾利效應修正”  2021第十七屆全國電子設計創意競賽暨學術研討會, PID: A13, 4102021,高雄,台灣.
  28. Chien-Yu Lai, Yu-Ting Hsu, Wen-How Lan*, Kai-Feng Huang, Shao-Yi Lee, Kuo-Jen Chang, Mu-Chun Wang*, Chien-Jung Huang, “Effect of Bismuth Content in Precursor on the Structural and Optical Properties of Bismuth Molybdenum Oxide Film Prepared by Spray Pyrolysis,” 7th IEEE ICSEVEN 2020, PID: P20200920755208, Nov. 5-8, Penhu, Taiwan.
  29. Tzu-Chieh Chen, Wen-How Lan*, Wan-Chun Yang, Chun-An Chen, Ming-Chang Shih, David Jui-Yang Feng, and Mu-Chun Wang, “Electrical Characterization of Si/ZnO:Er,Yb Diode on NH4F/AgNO3 Aqueous Solution Processed Si Substrate,” 2020 International Electron Devices & Materials Symposium (IEDMS 2020), PID: PO3-5, Oct. 15-16, Taoyuan City, Taiwan.
  30. Shou-Yen Chao, Ji-Min Zhang, Wei-Lun Chu, Jian-Ming Chen, Cheng-Hsun-Tony Chang, Chii‐Wen Chen, and Mu-Chun Wang*, “Leakage of High-k Gate Dielectric of nMOSFETs with DPN Treatment under Various Nitrogen Concentrations,” 2020 International Electron Devices & Materials Symposium (IEDMS 2020), PID: PO5-1, Oct. 15-16, Taoyuan City, Taiwan.
  31. Pei-Cheng Jiang, Yu-Ting Chow, Chi-Wei Chien, Cheng-Hsun-Tony Chang*, Chiean-Kuo Chang, Tien-Szu Shen, Bing Mau Chen, Shou-Yen Chao, Mu-Chun Wang, Chii-Ruey Lin, “Silane-free procedure for SiO2 layer formation at room temperature,” 2020 International Electron Devices & Materials Symposium (IEDMS 2020), PID: PO7-14, Oct. 15-16, Taoyuan City, Taiwan.
  32. De-Cheng Zhang, Ching-Chuan Chou, Ho-Hsiang Chen, Shang-Ze Chen, Jian-Ming Chen, Hui-Yun Bor, Wen-How Lan, Mu-Chun Wang*, “Fringe Gate Leakage of 28nm HK/MG nMOSFETs with Nitridation Treatments,” 3rd IEEE International Conference on Knowledge Innovation and Invention 2020 (IEEE ICKII 2020), August 21-23, 2020, Kaohsiung, Taiwan.
  33. Si-Ping Li, Jia-Wei Xu, Wei-Hao Li, Jian-Ming Chen, Chao-Nan Wei, Wen-How Lan, Mu-Chun Wang*, “Patterns of Exposing Integrity of 28nm-node High-k Gate Dielectric on p-substrate with Nitridation Treatments,” 3rd IEEE International Conference on Knowledge Innovation and Invention 2020 (IEEE ICKII 2020), August 21-23, 2020, Kaohsiung, Taiwan.
  34. Ying-Jun Deng, Hao-Lun Hu, Yu-Han Liang, Jian-Ming Chen, Ching-Chuan Chou, Shea-Jue Wang, Mu-Chun Wang*, “Q-factor Integrity of 28nm-node High-k Gate Dielectric,” 3rd IEEE International Conference on Knowledge Innovation and Invention 2020 (IEEE ICKII 2020), August 21-23, 2020, Kaohsiung, Taiwan.
  35. Yu-Chen Lin, Kai-Chun Zhan, Ji-Min Zhang, Jian-Ming Chen, Cheng-Hsun-Tony Chang, Shea-Jue Wang, Mu-Chun Wang*, “Junction Integrity for 28nm High-k nMOSFETs with Thermal Stress,” 3rd IEEE International Conference on Knowledge Innovation and Invention 2020 (IEEE ICKII 2020), August 21-23, 2020, Kaohsiung, Taiwan.
  36. Ching-Chuan Chou, Jia-Wei Xu, Cheng-Zh Song, Hong-Yi Lin, Jian-Ming Chen, Cheng-Hsun-Tony Chang, Chii‐Wen Chen, Mu-Chun Wang*, “ON/OFF Current of Nano-node Field-Effect Transistors on p-substrate or SOI Substrate,” 2020 4th International Conference on Material Engineering and Advanced Manufacturing Technology (MEAMT 2020), PID: A1006, July 20-22, 2020, Seoul, Korea.
  37. Mu-Chun Wang*, Yi-Chun Shen, Tien-Szu Shen, Cheng-Hsun-Tony Chang, Shea-Jue Wang, Wen-How Lan, “Integrity of N-type Channel Surface for Nano-node High-k Gate Dielectric,2020 4th International Conference on Material Engineering and Advanced Manufacturing Technology (MEAMT 2020), PID: A008, 20-22, July, 2020, Seoul, Korea.
  38. Chun-An Chen, Yu-Ting Hsu, Wen-How Lan, Kai-Feng Huang, Kuo-Jen Chang, Mu-Chun Wang, Chien-Jung Huang, “Electrical Study of Er and N codoped Zinc Oxide Diode,” IEEE 2019 The International Conference on Science, Education and Viable Engineering (5th ICSEVEN 2019), Oct. 13-17, Yinchuan, Ningxia, China.
  39. Jian-Ming Chen, Mu-Chun Wang*, Shea-Jue Wang, Yi-Han Lou, Wen-How Lan, “Uniformity of Gate Dielectric for Core HK/MG pMOSFET with Nitridation Treatments,” IEDMS2019, PID:1037, Oct. 24-25, 2019, Taoyuan, Taiwan.
  40. Mu-Chun Wang*, Jian-Ming Chen, Shea-Jue Wang, Chih-Chieh Chang, Yi-Han Lou, Wen-How Lan, “Gate Dielectric Distribution of I/O HK/MG pMOSFET with Nitridation Treatments,” IEDMS2019, PID:1042, Oct. 24-25, 2019, Taoyuan, Taiwan.
  41. Chih-Chieh Chang, Chih-Cheng Lu, Mu-Chun Wang*, Heng-Sheng Huang, Shuang-Yuan Chen, and Shea-Jue Wang, “Nano-node n-type Gate Dielectric Integrity and Uniformity Correlated to Nitridation Process,” IEEE ISNE2019, Oct.09-10, 2019, Zhengzhou, China.
  42. Jian-Ming Chen, Chi-Hao Lo, Mu-Chun Wang*, Tien-Szu Shen, Ching-Chuan Chou, Wen-Shiang Liao, Wen-How Lan, “Comparison of Degradation and Recovery of SiONx and Hf-based Dielectric under Electrical-field Stress,” International Congress on Advanced Materials Sciences and Engineering 2019 (ICAMSE2019), July 22-24, Osaka, Japan.
  43. Mu-Chun Wang*, Tien-Szu Shen, Hui-Yun Bor, Chao‐Nan Wei, Wen‐Shiang Liao and Wen-How Lan, “Punch-through and DIBL Effects Exposing Nano-node SOI FinFETs under Heat Stress,” IEEE 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2019), PID:330, July 02-05, Hangzhou, China.
  44. Hsiang-Ming Haung, Yu-Ting Hsu, Wen-How Lan*, Kai-Feng Huang, Kuo-Jen Chang, Jia-Ching Lin, Wen-Jen Lin , Shao-Yi Lee, Mu-Chun Wang, “Photoluminescence Study of Er doped Zinc Oxide Prepared by Spray Pyrolysis with Zinc Formate Precursor,” IEEE 2019 The International Conference on Science, Education and Viable Engineering (4th ICSEVEN 2019), Apr. 6-10, Ho Chi Minh, Vietnam.
  45. Yau-Lung Tasi, Wen-How Lan*, Kuo-Jen Chang, Jia-Ching Lin, Wen-Jen Lin, Shao-Yi Lee, Mu-Chun Wang, Chien-Jung Huang, “Study of State Energies in InAs/GaSb Superlattice with InSb Interlayer,” IEEE 2019 The International Conference on Science, Education and Viable Engineering (4th ICSEVEN 2019), Apr. 6-10, Ho Chi Minh, Vietnam.
  46. Tien-Szu Shen, Jian-Ming Chen, De-Cheng Zhang, Chun-Chieh Yang, Wen-Shiang Liao, Chi-Hao Lo, Wen-How Lan, Mu-Chun Wang*, “DIBL Effect for Nano-node p-type FinFETs under Thermal Stress,” 2018 International Electron Devices & Materials Symposium (IEDMS 2018), PID:158, Nov. 14-16, Keelung City, Taiwan.
  47. Ching-Chuan Chou, De-You Zeng1, Wei-En Gao, Cheng-Yi Fan, Wen-Shiang Liao, Zi-Jun Xie, Wen-How Lan, Mu-Chun Wang*, “Punch-through Effect for Nano-node n-type FinFETs under Thermal Stress and Vt Implant Energy,” 2018 International Electron Devices & Materials Symposium (IEDMS 2018), PID:155, Nov. 14-16, Keelung City, Taiwan.
  48. Zi-Jun Xie, Cheng-Hsun-Tony Chang, Min-Zge Tsai, Cheng-Hua Peng, Hao-Chen Xu, Wen-Shiang Liao, Wen-How Lan, Mu-Chun Wang*, “Abnormal Characteristics of Drive Current for n-type FinFETs under Normal Operation Field,” 2018 International Electron Devices & Materials Symposium (IEDMS 2018), PID:163, Nov. 14-16, Keelung City, Taiwan.
  49. Yu-Ting Hsu, Che-Chi Lee, Wen-How Lan, Kai-Feng Huang, Kuo-Jen Chang, Jia-Ching Lin, Shao-Yi Lee, Wen-Jen Lin , Mu-Chun Wang, Chien-Jung Huang, “Thickness Study of Er-doped Magnesium Zinc Oxide Diode,” IEEE/ 3rd 2018 The International Conference on Science, Engineering, Vocational Education and Novelty (3rd ICSEVEN 2018), Henan, China on Nov. 3-7, 2018.
  50. Hsiang-Ming Huang, Yu-Ting Hsu, Wen-How Lan, Kai-Feng Huang, Kuo-Jen Chang, Jia-Ching Lin, Wen-Jen Lin, Mu-Chun Wang, Cheng-Fu Yang, “Conductivity Study of Er doped Zinc Oxide by Spray Pyrolysis with Zinc Formate Precursor,” 2018 International Conference on Innovation, Communication and Engineering (ICICE 2018), Nov. 9-14, 2018, Hangzhou, China.
  51. Tsung-Mao Hsieh, Cheng-You Liu, Hsiang-Ming Huang, Che-Chi Lee, Wen-How Lan, Mu-Chun Wang, Jia-Ching Lin, Kuo-Jen Chang, Wen-Jen Lin, “Anneal effect of Er doped zinc oxide by spray pyrolysis,” IEEE ISNE 2018, PID: 8098 (P1-12), May 2018, Taipei, Taiwan.
  52. Chih-Chieh Chang, Mu-Chun Wang*, Shun-Ping Sung, Heng-Sheng Huang, Heng-Sheng Huang, Shuang-Yuan Chen, Shea-Jue Wang, “Observation of Degradation and Recovery of Stacked HfOx/ZrOy/HfOx MOSFETs,” IEEE ISNE 2018, PID:8040 (P1-05), May 2018, Taipei, Taiwan.
  53. Yan-Ting Chen, Mu-Chun Wang*, Ko-Chin Hsu, Heng-Sheng Huang, Shuang-Yuan Chen, Shea-Jue Wang, “Off-state Current Behaviors of 28nm-node nMOSFETs under Negative Gate Bias,” IEEE ISNE 2018, PID:8016 (P1-24), May 2018, Taipei, Taiwan.
  54. Heng-Sheng Huang, Ping-Ray Huang, Shuang-Yuan Chen, Shea-Jue Wang, Mu-Chun Wang*, LS Huang, Wei-Lun Wang, “The μeq Fitting for Mixed Current Model of MOSFETs Considering Horizontal Electric Field,” IEEE ISNE 2018, PID:8026 (P1-25), May 2018, Taipei, Taiwan.
  55. Shih-Fan Chen, Shea-Jue Wang*, Yu-Hsiang Li, Zheng-An Zhu, Xiao-Ting Hong, Jin-Hui Hu, Mu-Chun Wang*, “Electrical Characteristics of WO3/Ag/WO3 Sandwich Structure Fabricated with Magnetic-control Sputtering Metrology,” IEEE ISNE 2018, PID: 8148 (S14-1), May 2018, Taipei, Taiwan.
  56. Zhiming Wang, Ching-Chuan Chou, Wei-Cheng Wang, Tien-Szu Shen, Ting-Wei Chao, Zi-Jun Xie, Wen-Shiang Liao, Mu-Chun Wang*, “Drive Current Behaviors of Multi N-channel FinFETs under Different VT Implant Energies,” IEEE ISNE 2018, PID: 8049 (P1-01), May 2018, Taipei, Taiwan.
  57. Ting-Wei Chao, Tien-Szu Shen, Chii-Ruey Lin, Ching-Chuan Chou, Chia-Hsien Chang, Wen-Shiang Liao, Wen-How Lan, Mu-Chun Wang*, “GIDL Effect Observed in FinFET Shapes and VT Implant Energy,” IEEE ISNE 2018, PID:8107 (P1-04), May 2018, Taipei, Taiwan.
  58. Wen-Yang Huang, Tsai-Sheng Cheng, Ming-Jin Hong, Wen-Shiang Liao, Chi-Hao Lo, Wen-How Lan, Mu-Chun Wang*, “Off-state Drain Current Characteristics of p-type Multi-channel FinFETs Impacted with Different Vt Implantation Energy,” IEEE ISNE 2018, PID:8031(S2-4), May 2018, Taipei, Taiwan.
  59. Mu-Chun Wang, Wen-Yang Huang, Chong-An Dai, Wen-Shiang Liao, Chi-Hao Lo, Shea-Jue Wang, Wen‐How Lan, “Plasma Implant Causing DIBL Variation in p-channel FinFETs with Single or Multi-fin Shape on SOI Wafer,” APSPT-10, PID: B-009, Dec. 2017, Taoyuan, Taiwan.
  60. Mu-Chun Wang, Ting‐Wei Chao, Chong-An Dai, Wen-Shiang Liao, Zi-Jun Xie, Shea-Jue Wang, Wen‐How Lan, “VT Ion Implant Inducing DIBL Variance in n-channel FinFETs on SOI Substrate,” APSPT-10, PID: B-010, Dec. 2017, Taoyuan, Taiwan.
  61. Yi-Fu Lu, Wen-How Lan*, Mu-Chun Wang*, Ming-Chang Shih, Wen-Jen Lin, Jia-Ching Lin, Shao-Yi Lee, Kuo-Jen Chang, Chien-Jung Huang, “Resistance Study of Er doped Zinc Oxide Diode by Spray Pyrolysis,” 2017 The International Conference on Science, Engineering, Vocational Education and Novelty (IEEE/ICSEVEN 2017), PID: P20170816110901, Oct. 2017, Guangxi, China.
  62. Yi-Fu Lu, Wen-How Lan*, Ming-Chang Shih, Hsin-Hui Kuo, David Jui-Yang Feng, Yi-Jen Chiu, Yung-Jr Hung, Mu-Chun Wang*, Cheng-Fu Yang, “Photocatalytic Study of Calcium Zinc Oxide with Different Calcium Content,” 2017 International Conference on Innovation, Communication and Engineering (ICICE 2017), Nov. 2017, Kunming, Yunnan Province, P. R. China.
  63. Mu-Chun Wang*, Shun-Ping Sung, Shea-Jue Wang, Heng-Sheng Huang, Chao-Nan Wei, Chih-Chieh Chang, Shuang-Yuan Chen, “Degradation and Recovery of HfZrO2 Dielectric under Voltage Stress,” International Electron Devices and Materials Symposium 2017 (IEDMS 2017), PID: 1111 (PC-19), Sept. 2017, Hsinchu, Taiwan.
  64. Ping-Ray Huang, Heng-Sheng Huang, Mu-Chun Wang*, Shuang-Yuan Chen, Shea-Jue Wang, Win-Der Lee, “I-V Model for Nano-MOSFETs by Considering Diffusion Current,” International Electron Devices and Materials Symposium 2017 (IEDMS 2017), PID: 1121 (PC-21), Sept. 2017, Hsinchu, Taiwan.
  65. Mu-Chun Wang*, Zih-Yang Rao, Chii‐Wen Chen, Wen-Shiang Liao, Hui-Yun Bor, Zi-Jun Xie, Shea-Jue Wang, Wen-How Lan, “Corner Gate Leakage of n-channel FinFETs under Heating Effect,” International Electron Devices and Materials Symposium 2017 (IEDMS 2017), PID: 1124 (PC-23), Sept. 2017, Hsinchu, Taiwan.
  66. 饒子揚、鄧永志、李明峻、王木俊, “n型奈米鰭式電晶體在汲極加壓後之元件劣化探討” 2017電子,信號,與通訊創新科技研討會, 國立高雄應用科技大學,高雄, 5 2017.
  67. 饒子揚、沈宏謦、王木俊, “n型奈米鰭式電晶體閘極電流密度分佈探討” 2017電子,信號,與通訊創新科技研討會, 國立高雄應用科技大學,高雄, 5 2017.
  68. 黃文敭、張耀文、趙廷唯、王木俊, “溫度調變下不同p通道鰭式電晶體之DIBL變化” 2017電子,信號,與通訊創新科技研討會, 國立高雄應用科技大學,高雄, 5 2017. (優秀論文獎)
  69. 趙廷唯、古俊烽、黃文敭、王木俊, “n通道鰭式電晶體在溫度不同之汲極引起的能障下降變化” 2017電子,信號,與通訊創新科技研討會, 國立高雄應用科技大學,高雄, 5 2017.
  70. MuChun Wang, ZihYang Rao, HaoYi Liu, FuYuan Tuan, WenShiang Liao and WenHow Lan, “DIBL Effect Gauging the Integrity of Nanonode nchannel FinFETs,” IEEE ISNE 2017, PID:12, May 2017, Keelung, Taiwan.
  71. MuChun Wang, TingWei Chao, ChaoYen Chen, FuYuan Tuan, YuJung Liao and SheaJue Wang, “VT Implant Energy Impacting DIBL and Punch‐through Effects of Nano‐node n‐channel FinFETs on SOI Wafers,” IEEE ISNE 2017, PID:13, May 2017, Keelung, Taiwan.
  72. Mu‐Chun Wang, Ko‐Chin Hsu, Jin‐Wei Guo, Heng‐Sheng Huang, Shuang‐Yuan Chen and Shea‐Jue Wang, “Decoupled Tunneling and GIDL Effects for 28nm Highk Stacked nMOSFETs,” IEEE ISNE 2017, PID:15, May 2017, Keelung, Taiwan.
  73. CheChi Lee, JengLung Chen, WenHow Lan and MuChun Wang, “Deposition Temperature Study of Nitrogendoped Zinc Oxide by Spray Pyrolysis,” IEEE ISNE 2017, PID:17, May 2017, Keelung, Taiwan.
  74. Fu‐Yuan Tuan, Shun‐Ping Sung, Hong‐Jie Chen, Shea‐Jue Wang, Heng‐Sheng Huang and Mu‐Chun Wang, “Electrical Stress Probing Recovery Efficiency of 28nm HK/MG nMOSFETs under Different Nitrogen Concentration in Nitridation,” IEEE ISNE 2017, PID:23, May 2017, Keelung, Taiwan.
  75. Fu‐Yuan Tuan, Shun‐Ping Sung, Tzu‐Hao Hsieh, Ching‐Tang Chang, Shuang‐Yuan Chen and Mu‐Chun Wang, “Voltage Stress Exposing Degradation Rate of 28nm HK/MG nMOSFETs under Different Nitridation Annealing Temperatures,” IEEE ISNE 2017, PID:25, May 2017, Keelung, Taiwan.
  76. ZihYang Rao, MuChun Wang, JunWen Cai, FuYuan Tuan, WenShiang Liao and WenHow Lan, “Isolation Integrity of Drain/Gate Contact Exposed with Source/Drain Extension Length for SOI p‐channel FinFETs,” IEEE ISNE 2017, PID:28, May 2017, Keelung, Taiwan.
  77. Wei‐Lun Wang, Heng‐Sheng Huang, Yu‐Hao Chao, Shuang‐Yuan Chen, Shea‐Jue Wang, Fu‐Yuan Duan and Mu‐Chun Wang, “IV Model of Nano nMOSFETs Incorporating Drift and Diffusion Current,” IEEE ISNE 2017, PID:31, May 2017, Keelung, Taiwan.
  78. MuChun Wang, WenYang Huang, JiaHong Lin, FuYuan Tuan, YuTsung Liao and WenHow Lan, “The DIBL Effect of SOI pchannel FinFETs under Various SDE Lengths,” IEEE ISNE 2017, PID:36, May 2017, Keelung, Taiwan.
  79. 饒子揚、徐振威、鄧永志、段復元、王木俊, “GIDL效應驗證微影偏移於奈米SOI n通道FinFET,” 2017第十五屆微電子技術發展與應用研討會, PID: A5, 高雄, 5 2017.
  80. 王木俊、趙廷唯、劉昌昇、連佳弘、饒子揚、段復元, “長源/汲極延伸長度與不同VT離子佈植能量下在SOI n通道FinFETs中之DIBL與次臨界擺幅效應,” 2017第十五屆微電子技術發展與應用研討會, PID: A12, 高雄, 5 2017.
  81. 王木俊、黃文敭、劉婉萱、趙廷唯、饒子揚、段復元, “不同源/汲極延伸長度在SOI n通道FinFETs中之DIBL與貫穿效應,” 2017第十五屆微電子技術發展與應用研討會, PID: A17, 高雄, 5 2017.
  82. Wei-Hsuan Hsu, Mu-Chun Wang, Ming-Chang Shih, Cheng-Lung Chen, Che-Chi Lee, Wen-Jen Lin, Shao-Yi Lee, Jia-Ching Lin, Kuo-Jen Chang, Tzu-Hsiang Lin, Yi-Fu Lu, Yu-Xuan Ding, Sheng-Chung Huang, Chien-Jung Huang, Wen-How Lan, “Conductivity Study of MgZnO/ZnO Heterostructure,” Optics & Photonics Taiwan International Conference (OPTIC 2016), Taipei, Taiwan, Dec. 03-05, 2016.
  83. 黃峻俞, 楊政達, 彭晟書, 陳適範, 王錫九, 王木俊, 林於隆,“氮氣流量對非晶氮化鉭應用於擴散阻絕層與擴散係數之影響研究,” 105中國材料科學學會年,PID:221, 11, 2016,新竹, 台灣.
  84. ShunPing Sung, Mu-Chun Wang, Heng Sheng Huang, Shuang-Yuan Chen , ChengWei Bai, Shea Jue Wang, WinDer Lee, “Substrate Current Characteristics for 28 nm HK/MG NMOSFETs under HC Stresses,” International Electron Devices and Materials Symposium 2016 (IEDMS 2016), PID: 1033 (PC-6), Nov. 2016, Taipei, Taiwan.
  85. ChingTang Chang, Heng Sheng Huang , WinDer Lee , Shuang Yuan Chen, HauKei Hsu, Mu-Chun Wang, Shea-Jue Wang, “HotCarrier Induced Degradation and Its Recovery in HK/MG NMOSFETs,” International Electron Devices and Materials Symposium 2016 (IEDMS 2016), PID: 1034 (PC-7), Nov. 2016, Taipei, Taiwan.
  86. KoChin Hsu, FuYuan Tuan, MuChun Wang, Shea Jue Wang, Heng-Sheng Huang, Shuang-Yuan Chen, WinDer Lee, ChiaYu Tsai, “Feasible Programming Methods for 28nmnode nMOSFETs,” International Electron Devices and Materials Symposium 2016 (IEDMS 2016), PID: 1042 (PC-8), Nov. 2016, Taipei, Taiwan.
  87. WeiLun Wang, Heng-Sheng Huang, WinDer Lee, Shuang-Yuan Chen, YuHao Travis Chao, Mu-Chun Wang, Shea-Jue Wang, “A New Model Explaining the Saturation Current of NanoMOSFETs,” International Electron Devices and Materials Symposium 2016 (IEDMS 2016), PID: 1049 (PD-10), Nov. 2016, Taipei, Taiwan.
  88. Mu-Chun Wang, ZihYang Rao, YouSheng You, WenShiang Liao, JhenWei Tien, Shea-Jue Wang, WenHow Lan, “CLM Effect of Nano pchannel FinFETs Depending on VT Implant Energies,” International Electron Devices and Materials Symposium 2016 (IEDMS 2016), PID: 1053 (PC-13), Nov. 2016, Taipei, Taiwan.
  89. WenShiang Liao, ZihYang Rao, YouSheng You, Mu-Chun Wang, YuWei Wang, Shea-Jue Wang, WenHow Lan, “Effective Surface Channellength Effect of Nanoscale nchannel FinFETs Integrated with VT Doping Energies,” International Electron Devices and Materials Symposium 2016 (IEDMS 2016), PID: 1056 (PC-14), Nov. 2016, Taipei, Taiwan.
  90. Mu-Chun Wang, WenYang Huang, HsuHsin Fu, ChaoNan Wei, JhenWei Tien, Shea Jue Wang, WenHow Lan, “Early Effect of Nano pchannel FinFETs Biased at Middle Gate Field,” International Electron Devices and Materials Symposium 2016 (IEDMS 2016), PID: 1063 (PD-13), Nov. 2016, Taipei, Taiwan.
  91. Mu-Chun Wang, Wen‐Yang Huang, Jia‐Houng Huang, Wen‐Shiang Liao, Yu‐Wei Wang, Shea Jue Wang, Wen‐How Lan, “Middle Gate Bias Exposing CLM Effect of Nano n‐channel FinFETs,” International Electron Devices and Materials Symposium 2016 (IEDMS 2016), PID: 1064 (PC-16), Nov. 2016, Taipei, Taiwan.
  92. Chii‐Wen Chen, Ting-Wei Chao, Chen‐Wei Zhang, Hui‐Yun Bor, Mu-Chun Wang, Jhen‐Wei Tien, Wen‐How Lan, “Heat Stress Impacting Early Effect of Nano p‐channel FinFETs at High Gate Field,” International Electron Devices and Materials Symposium 2016 (IEDMS 2016), PID: 1066 (PC-17), Nov. 2016, Taipei, Taiwan.
  93. Mu-Chun Wang, Ting-Wei Chao, YunRu Chen, ChaoNan Wei, YuWei Wang, Shea- Jue Wang, WenHow Lan, “Thermal Stress Exposing Surface Channellength Effect of Nano n-type FinFETs,” International Electron Devices and Materials Symposium 2016 (IEDMS 2016), PID: 1067( PA-11), Nov. 2016, Taipei, Taiwan.
  94. FuYuan Tuan, KoChin Hsu, Shea-Jue Wang, MuChun Wang, ChiaYu Tsai, Heng-Sheng Huang, Shuang-Yuan Chen, WinDer Lee HuiYun Bor, “The Program Mechanism with CHEI/DAHC on Nano HK/MG CMOS Logic Process,” International Electron Devices and Materials Symposium 2016 (IEDMS 2016), PID: 1082 (PC-22), Nov. 2016, Taipei, Taiwan.
  95. Shea Jue Wang, TzuHsien Yang, ZhengDa Yang, JunYu Huang, ShihFan Chen, MuChun Wang, YuLong Lin, HuiYun Bor, “Nitrogen Flow Rate Relating Diffusion Behaviors of Copper in TaN Layers,” International Electron Devices and Materials Symposium 2016 (IEDMS 2016), PID: 1095 (PC-24), Nov. 2016, Taipei, Taiwan.
  96. Shea Jue Wang, Tzu‐Hsien Yang, Zheng‐Da Yang, Lin Chih Chan, Shih‐Fan Chen, Mu‐Chun Wang, Yu‐Long Lin, Chao‐Nan Wei, “Performance of TaN as Diffusion Barrier Layer under N2 Flow‐rate Control,” International Electron Devices and Materials Symposium 2016 (IEDMS 2016), PID: 1096 (PC-25), Nov. 2016, Taipei, Taiwan.
  97. Ko-Chin Hsu, Mu-Chun Wang, Heng Sheng Huang, Zih‐Yang Rao, Shea Jue Wang , “Comparison of Nano-node n-channel FinFETs and 28nm HK/MG nMOSFETs,” International Electron Devices and Materials Symposium 2016 (IEDMS 2016), PID: 1137 (PD-26), Nov. 2016, Taipei, Taiwan.
  98. Zih-Yang Rao, Mu-Chun Wang, Wen-Shiang Liao, Ko-Chin Hsu, “Gate Leakage for Nano-node nMOSFETs and n-channel FinFETs,” International Electron Devices and Materials Symposium 2016 (IEDMS 2016), PID: 1204 (PD-39), Nov. 2016, Taipei, Taiwan.
  99. Tzu-Hsiang Lin, Ming-Chang Shih , David Jui-Yang Feng, Hsin-Hui Kuo, Yi-Jen Chiu, Yung-Jr Hung, Mu-Chun Wang , Chien-Jung Huang and Wen-How Lan, “Dark current reduction of n-ZnO/p-Si diode with Boron doped interlayer,” The 9th International Workshop on Zinc Oxide and Related Materials 2016 (IWZnO 2016), PID: TP14 (A-039), Oct. 2016, Taipei, Taiwan.
  100. Wen-How Lan, Ming-Chang Shih, David Jui-Yang Feng, Yu-Xuan Ding, Yi-Jen Chiu, Yung-Jr Hung, Wen-Jen Lin , Shao-Yi Lee, Jia-Ching Lin, Kuo-Jen Chang, Mu-Chun Wang, Chien-Jung Huang, “Photocatalytic Study of Zinc Oxide with Different Bismuth Doping,” The Fifth International Conference on Innovation, Communication and Engineering (ICICE 2016), PID: C160024, Xi'an, Shaanxi, P.R. China, Nov. 2016. (Best conference paper award)
  101. Ming-Chang Shih, David Jui-Yang Feng, Yu-Xuan Ding, Yi-Jen Chiu, Yung Hung, Wen-Jen Lin, Shao-Yi Lee, Jia-Ching Lin, Kuo-Jen Chang, Mu-Chun Wang, Chien-Jung Huang, Wen-How Lan, “Photocatalytic study of zinc oxide with different bismuth doping,” IEEE/ 2016 International Conference on Advanced Materials for Science and Engineering (ICAMSE2016), pp. 13-14, Nov. 2016.
  102. 王昱崴、游聖佑、張宸瑋、饒子揚、廖文翔、王木俊*, “不同n型鰭式電晶體之爾利電壓變化與多根鰭之相依性2016電子,信號,與通訊創新科技研討會, p.34, 國立高雄應用科技大學, 2016/5/27.
  103. 田振威、李彥勳、徐信復、盧君翰、廖文翔、王木俊*, “不同通道之爾利效應在p型鰭式場效應電晶體2016電子,信號,與通訊創新科技研討會, p.35, 國立高雄應用科技大學, 2016/5/27.
  104. 游一宏、黃佳鴻、陳韻如、廖文翔、王木俊*, “調變微影曝光能量參數對n型奈米鰭式電晶體之電性特性研究2016電子,信號,與通訊創新科技研討會, p.30, 國立高雄應用科技大學, 2016/5/27.
  105. 饒子揚、王昱崴、田振威、陳啟文、廖文翔、王木俊*, “通道寬度調變對奈米多通道n型鰭式電晶體之電特性探究2016電子,信號,與通訊創新科技研討會, p.31, 國立高雄應用科技大學, 2016/5/27.
  106. Mu-Chun Wang, Jhen-Wei Tien, Wen-Shiang Liao, Shea-Jue Wang, Chii-Wen Chen, Wen-How Lan, “Electrical Characteristics of p-type FinFETs with Different Source/Drain Extension Spacing,” International Electron Devices and Materials Symposium 2015 (IEDMS 2015), PID: 152 (D29), Nov. 2015, Tainan, Taiwan.
  107. Mu-Chun Wang, Jhen-Wei Tien, Wen-Shiang Liao, Shea-Jue Wang, Yu-Wei Wang, Chii-Wen Chen, Wen-How Lan, “Fringe-Gate Leakage Mechanisms under Various Source/Drain Extension Spacing for p-type FinFETs,” International Electron Devices and Materials Symposium 2015 (IEDMS 2015), PID: 243 (D30), Nov. 2015, Tainan, Taiwan.
  108. Mu-Chun Wang, Yu-Wei Wang, Wen-Shiang Liao, Shea-Jue Wang, Yi-Hong Yu, Chii-Wen Chen, Wen-How Lan, “A Derivative Metrology to Justify the Punch-Through Effect for n-type FinFETs,” International Electron Devices and Materials Symposium 2015 (IEDMS 2015), PID: 151 (D28), Nov. 2015, Tainan, Taiwan.
  109. Mu-Chun Wang, Yi-Hong Yu, Wen-Shiang Liao, Shea-Jue Wang, Zih-Yang Rao, Chun-Han Lu, Chii-Wen Chen, Wen-How Lan, “Early Effect for n-type FinFETs with Single-fin or Multi-fin Contour,” International Electron Devices and Materials Symposium 2015 (IEDMS 2015), PID: 155 (D44), Nov. 2015, Tainan, Taiwan.
  110. Cheng-Wei Bai, Heng-Sheng Huang, Shuang-Yuan Chen, Yi-Ming Li, Shea-Jue Wang, Win-Der Lee, Mu-Chun Wang, “Multiple Sweeping Drain-Bias Stress in 28 nm HK/MG nMOSFETs,” International Electron Devices and Materials Symposium 2015 (IEDMS 2015), PID: 146 (A23), Nov. 2015, Tainan, Taiwan.
  111. Li-Fu-Yang, Heng-Sheng Huang, Shuang-Yuan Chen, Yi-Ming Li, Shea-Jue Wang, Win-Der Lee, Mu-Chun Wang, “The GCIP effect with High Drain-Bias Stress in 28 nm HK/MG nMOSFETs,” International Electron Devices and Materials Symposium 2015 (IEDMS 2015), PID: 147 (A31), Nov. 2015, Tainan, Taiwan.
  112. Jia-Yu Cai, Fu-Yuan Tuan, Shea-Jue Wang, Heng-Sheng Huang, Shuang-Yuan Chen, Mu-Chun Wang, Win-Der Lee, Yi-Cheng Hsieh, “GCIP Characteristics of High-k Stack NMOSFETs,” International Electron Devices and Materials Symposium 2015 (IEDMS 2015), PID: 121 (A56), Nov. 2015, Tainan, Taiwan.
  113. Yu-Hao Chao, Heng-Sheng Huang, Shuang-Yuan Chen, Jia-Siang Lan, Shea-Jue Wang, Win-Der Lee, Mu-Chun Wang, “Simulation to Expose and Control the RSCE Effect for 28nm HK/MG nMOSFETs,” International Electron Devices and Materials Symposium 2015 (IEDMS 2015), PID: 145 (A22), Nov. 2015, Tainan, Taiwan.
  114. Hao-Kei Hsu, Heng-Sheng Huang, Win-Der Lee, Shuang-Yuan Chen, Kun-Yun Lian, Mu-Chun Wang, Shea-Jue Wang, “Recovery of Hot-carrier Induced Degradation in HK/MG PMOSFETs Treated by Different Nitridation Conditions,” International Electron Devices and Materials Symposium 2015 (IEDMS 2015), PID: 124 (A60), Nov. 2015, Tainan, Taiwan.
  115. Tzu-Yang Lin, Wen-How Lan, Chien-Jung Huang, Chun-Yi Lee, Wen-Jen Lin, Shao-Yi Lee, Jia-Ching LinKuo-Jen Chang, Mu-Chun Wang, Cheng-Fu Yang, “Visible Light Photocatalytic Study of Zinc Oxide Diode by Spray Pyrolysis,” 2015International Conference on Innovation, Communication and Engineering (ICICE 2015), PID: 1772, Oct. 2015, Hunan, China.
  116. Tzu-Yang Lin, Yu-Ting Hsu, Wen-How Lan, Wei-Hsuan Hsu, Chien-Jung Huang, Ming-Chang Shih, Mu-Chun Wang, Kai-Feng Huang, “Conductivity Study of Magnesium Zinc Oxide with Indium and Nitrogen co-doping by Spray Pyrolysis,” 2015International Conference on Innovation, Communication and Engineering (ICICE 2015), PID: 1769, Oct. 2015, Hunan, China.
  117. Mu-Chun Wang, Wei-Chun Chung, Yi-Hong Yu,Jhen-Wei Tien, Chii-Wen Chen, Wen-How Lan, “Reducing the Rework in the Photo-lithography Process of Wafer-bump Assembly with Quality Management,” IEEE/ IMPACT 2015, PID: TW106-1, July 2015, Taipei, Taiwan.
  118. Mu-Chun Wang, Wei-Chun Chung, Yi-Hong Yu,Yu-Wei Wang, Chii-Wen Chen, Wen-How LanCIP Metrology Improving the Bump Yield in Photo-lithography Process,” IEEE/ IMPACT 2015, PID: TW106-2, July 2015, Taipei, Taiwan.
  119. TzuYang Lin, WeiHsuan Hsu, ChunYi Lee, YuXuan Ding, ShengChung Huang, WenHow Lan, MuChun Wang, “Photocatalytic Study of Silver and Bismuth Codoped Zinc Oxide by Spray Pyrolysis,” IEEE/ International Symposium on Next-Generation Electronics (ISNE 2015), PID: 270164 (PW-07), May 2015, Taipei, Taiwan.
  120. Mu-Chun Wang, Jian-Liang Lin, De-Huang Jhuang, Wen-Shiang Liao, Yi-De Lai, Wen-How Lan, Shea-Jue Wang, “Electrical Performance of Dense and Isolated n-type FinFETs in Micro-loading Effect,” IEEE/ International Symposium on Next-Generation Electronics (ISNE 2015), PID: 270220 (PW-13), May 2015, Taipei, Taiwan.
  121. Mu-Chun Wang, Jian-Liang Lin, Shao-Syuan Syu, Wen-Shiang Liao, Wen-How Lan, Shea-Jue Wang, “Heating Stress Probing Electrical Performance of Multiple N-channel FinFETs with VT Doping Energies,” IEEE/ International Symposium on Next-Generation Electronics (ISNE 2015), PID: 270161 (PW-21), May 2015, Taipei, Taiwan.
  122. Mu-Chun Wang, Yi-De Lai, Shao-Syuan Syu, Wen-Shiang Liao, Wen-How Lan, Shea-Jue Wang, “Electrical Characteristics of Multi-gate P-channel FinFETs with VT Implanting Energies under Temperature Stress,” IEEE/ International Symposium on Next-Generation Electronics (ISNE 2015), PID: 270159 (PW-16), May 2015, Taipei, Taiwan.
  123. Yu-Ting Hsu, Tzu-Yang Lin, Wen-How Lan, Yu-Hsuan Huang, Huang-Ming Chang, Mu-Chun Wang, Cheng-Fu Yang, Kai-Feng Huang, “Photocatalytic Study of Bismuth Doped Zinc Oxide Prepared by Spray Pyrolysis: The effect of Annealing.” IEEE/ Optics & Photonics Taiwan, the International Conference (OPTIC), PID: 2014-Thu-P1001-P013, 4– 5 December 2014, Taichung, Taiwan.
  124. Yi-Hong Yu, Mu-Chun Wang*, Wen-Shiang Liao, Shang-Lin Tsai, Win-Der Lee, Chuan-Hsi Liu, “Photo Matrix Technology Overcoming the Constraint of Nano-node FinFETs,” International Electron Devices and Materials Symposium 2014 (IEDMS 2014), PID: 1232, Nov. 2014, Hualien, Taiwan.
  125. Mu-Chun Wang*, Yi-De Lai, Wen-Shiang Liao, Cheng-Wei Cai,, Win-Der Lee, Piyas Samanta, “Temperature Stress Probing Performance of p-channel FinFETs under Different VT Implanting Energies,” International Electron Devices and Materials Symposium 2014 (IEDMS 2014), PID: 1226, Nov. 2014, Hualien, Taiwan.
  126. Mu-Chun Wang*, Jian-Liang Lin, Wen-Shiang Liao, Jhao-Jhong Jiang, Win-Der Lee, Wen-How Lan, “Electrical Performance of n-channel FinFETs with Threshold-voltage Doping Energies under Heating Stress,” International Electron Devices and Materials Symposium 2014 (IEDMS 2014), PID: 1321, Nov. 2014, Hualien, Taiwan.
  127. Jia-Siang Lan, Mu-Chun Wang*, Wen-Sheng Chen, Yu-Zheng Lin, Heng-Sheng Huang, Shuang-Yuan Chen, Shea-Jue Wang, LS Huang, “Characteristics and  Kink Effect under Temperature Stress for 28nm HK/MG nMOSFETs after Plasma Nitridation Treatments,” International Electron Devices and Materials Symposium 2014 (IEDMS 2014), PID: 1246, Nov. 2014, Hualien, Taiwan.
  128. Yi-Ming Li, Mu-Chun Wang*, Wen-Sheng Chen, Heng-Sheng Huang, Shuang-Yuan Chen, Shea-Jue Wang, LS Huang, “Drain Field Exposing Hump Effect for 28nm HK/MG nMOSFETs under Plasma Nitridation Treatments,” International Electron Devices and Materials Symposium 2014 (IEDMS 2014), PID: 1265, Nov. 2014, Hualien, Taiwan.
  129. Kun-Yun Lian*, Heng-Sheng Huang1, Shuang-Yuan Chen, Wei-Jhih Jian1, Shea-Jue Wang, Mu-Chun Wang, LS Huang , “The Gate Leakage of 28 nm MOSFETs by Different Processes of DPN Treatments,” International Electron Devices and Materials Symposium 2014 (IEDMS 2014), PID: 1279, Nov. 2014, Hualien, Taiwan.
  130. Yi-Cheng Hsieh*, Shea-Jue Wang, Heng-Sheng Huang, Fu-Yuan Tuan, Shuang-Yuan Chen, Mu-Chun Wang, LS Huang , “Discussion of different Nitrogen Concentrations and Annealing Temperatures on GIDL Current Characteristics of High-k Stack PMOSFETs,” International Electron Devices and Materials Symposium 2014 (IEDMS 2014), PID: 1280, Nov. 2014, Hualien, Taiwan.
  131. Y. L. Chen, H. W. Hsu, H. S. Huang, S. Y. Chen, M. C. Wang, and C. H. Liu,Relationship between Stress Distribution and HotCarrier Effect for Strained nMOSFETs,” International Electron Devices and Materials Symposium 2014 (IEDMS 2014), PID: 1144, Nov. 2014, Hualien, Taiwan.
  132. Mu-Chun Wang, Po-Kai Chen, Win-Der Lee, Yi-Hong Yu, Shea-Jue Wang, Fang Hsu, Osbert Cheng, LS Huang, “Early Effect Exposing Performance of 28nm HK/MG pMOSFETs under PDA or DPN Nitridation Treatment,” 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, PID: P0004 (P109), June 2014, Chengdu, China.
  133. Shea-Jue Wang, Chao-Wang Li, Win-Der Lee*, Kuan-Ho Chen , Osbert Cheng, LS Huang, Mu-Chun Wang*, “CLM Effect for 28nm Stacked HK NMOSFETs after DPN Treatment with Different Annealing Temperatures,” IEEE/ International Symposium on Next-Generation Electronics (ISNE 2014), PID: 240034 (Y5-18), May 2014, Taoyuan, Taiwan.
  134. Win-Der Lee, Jie Min Yang, Shea-Jue Wang *, Osbert Cheng, LS Huang, Mu-Chun Wang*, “Comparison of Gate Leakage for SiONx and HfZrOx Gate Dielectrics of MOSFETs with Decoupled Plasma Nitridation Process,” IEEE/ International Symposium on Next-Generation Electronics (ISNE 2014), PID: 240035 (Y5-13), May 2014, Taoyuan, Taiwan. (re-submit to MEE journal)
  135. Win-Der Lee, Chun-Wei Lian, Shea-Jue Wang*, Yi-Hong Yu, Osbert Cheng, LS Huang, Mu-Chun Wang*, “Electrical Quality of 28nm HK/MG MOSFETs with PDA and DPN Treatment,” IEEE/ International Symposium on Next-Generation Electronics (ISNE 2014), PID: 240039 (Y5-15), May 2014, Taoyuan, Taiwan.
  136. Shea-Jue Wang, Wen-Sheng Chen, Win-Der Lee, Tsun-Shan Chang, Heng-Sheng Huang, Shuang-Yuan Chen, Osbert Cheng, LS Huang, Mu-Chun Wang*, “GIDL and Gated-Diode Metrologies for 28nm HK/MG nMOSFETs in Nitridation Annealing Temperatures,” IEEE/ International Symposium on Next-Generation Electronics (ISNE 2014), PID: 240045 (Y5-16), May 2014, Taoyuan, Taiwan.
  137. Mu-Chun Wang, Chao-Wang Li, Yu-Hsun Tseng, Shea-Jue Wang, Ming-Feng Lu, Osbert Cheng, LS Huang, Chuan-Hsi Liu, “Early Effect for 28nm HfOx/ZrOy/HfOx Gate Dielectric of NMOSFETs after DPN Process with Different Nitrogen Concentration,” 8th Asia-Pacific International Symposium on the Basics and Applications of Plasma Technology (APSPT-8), PID:PC-006 (P1-34), Dec. 2013, Hsinchu, Taiwan.
  138. Mu-Chun Wang, Chun-Wei Lian, Fu-Chien Chen, Shea-Jue Wang, Ming-Feng Lu, Osbert Cheng, LS Huang, Shih-Ching Lee, “Study of Gate Leakage Characteristics for 28nm HfZrOx PMOSFETs after DPN Process Treatment with Different Nitrogen Concentration,” 8th Asia-Pacific International Symposium on the Basics and Applications of Plasma Technology (APSPT-8), PID:PF-003 (P2-16), Dec. 2013, Hsinchu, Taiwan.
  139. Wen-Sheng Chen, Mu-Chun Wang, Min-Ru Peng, Shea-Jue Wang, Heng-Sheng Huang, Osbert Cheng, LS Huang, “Electrical Characteristics and Hot-Carrier Effect of Stacked HK/MG nMOSFETs under DPN Treatment plus Annealing Temperatures,” 8th Asia-Pacific International Symposium on the Basics and Applications of Plasma Technology (APSPT-8), PID:OB-011 (O4-03), Dec. 2013, Hsinchu, Taiwan.
  140. Mu-Chun Wang, Po-Kai Chen, Win-Der Lee, Fang Hsu, Ming-Feng Lu, Min-Ru Peng, Shea-Jue Wang, LS Huang, Shih-Ching Lee, “Performance of Deep-nano Gate-last HK/MG nMOSFETs using DPN or PDA Process with Annealing Temperatures under Temperature Stress,” 8th Asia-Pacific International Symposium on the Basics and Applications of Plasma Technology (APSPT-8), PID:PF-002 (P2-17), Dec. 2013, Hsinchu, Taiwan.
  141. Mu-Chun Wang, Jie-Min Yang, Shea-Jue Wang, Ming-Feng Lu, Heng-Sheng Huang, Win-Der Lee, LS Huang, Shih-Ching Lee, “Gate Leakage for 28nm HfZrOx Gate Dielectric of PMOSFETs after Decoupled Plasma Nitridation Process with Annealing Temperatures,” 8th Asia-Pacific International Symposium on the Basics and Applications of Plasma Technology (APSPT-8), PID:PB-005 (P1-24), Dec. 2013, Hsinchu, Taiwan.
  142. Mu-Chun Wang, Jing-Zong Jhang, Jian-Liang Lin, Shea-Jue Wang, Heng-Sheng Huang, Osbert Cheng, LS Huang, Shih Ching Lee, “Junction and Punch-Through Leakage Mechanisms for 28nm High-k/ Metal Gate of PMOSFETs after PDA Process Treatment,” International Electron Devices and Materials Symposium 2013(2013 IEDMS), PID:15(P1-09) , Nov. 2013, Nantou, Taiwan.
  143. Mu-Chun Wang, Chun-Wei Lian, Shea-Jue Wang, Po-Kai Chen,, Ming-Feng Lu, Heng-Sheng Huang, Osbert Cheng, LS Huang, Shih-Ching Lee, “Performance Study for 28nm High-k/Metal Gate of PMOSFETs with Gate-Last Process before and after PDA Treatment,” International Electron Devices and Materials Symposium 2013(2013 IEDMS), PID:32(P1-10) , Nov. 2013, Nantou, Taiwan.
  144. Mu-Chun Wang, Chao-Wang Li, Shea-Jue Wang, Po-Kai Chen, Ming-Feng Lu, Osbert Cheng, LS Huang, Chuan-Hsi Liu, “Early Effect for 28nm HZH Gate-Stacked NMOSFETs after Post Deposition Annealing Process Treatment,” International Electron Devices and Materials Symposium 2013(2013 IEDMS), PID: 33(P1-11), Nov. 2013, Nantou, Taiwan.
  145. Mu-Chun Wang, Jie-Min Yang, Shea-Jue Wang, Jian-Liang Lin, Ming-Feng Lu, Osbert Cheng, LS Huang, Shih-Ching Lee, “Study of Gate Leakage for 28nm HfZrOx Gate Dielectric of PMOSFETs after Post Deposition Annealing Process,” International Electron Devices and Materials Symposium 2013(2013 IEDMS), PID:34 (P1-68), Nov. 2013, Nantou, Taiwan.
  146. M.C. Wang, C.W. Li, S.J. Wang, M.F. Lu, C.W. Lian, W.D. Lee, L.S. Huang, C.H. Liu, “CLM Effect for 28nm Stacked HK/MG NMOSFETs after DPN Process with Different Nitrogen Concentration,” International Electron Devices and Materials Symposium 2013(2013 IEDMS), PID: 38 (P1-12), Nov. 2013, Nantou, Taiwan.
  147. M.C. Wang, C.W. Lian, S.J. Wang, M.F. Lu, H.S. Huang, J.M. Yang, O. Cheng, LS Huang, S.C. Lee, “Gate Leakage for 28nm High-k/Metal Gate NMOSFETs after DPN Treatment with Different Nitrogen Concentration,” International Electron Devices and Materials Symposium 2013(2013 IEDMS), PID:41(P1-13) , Nov. 2013, Nantou, Taiwan.
  148. M.C. Wang, J.M. Yang, S.J. Wang, M.F. Lu, C.W. Li, O. Cheng, LS Huang, S.C. Lee, “Gate Leakage Effect for 28nm HK/MG NMOSFETs after DPN Treatment with Different Annealing Temperatures,” International Electron Devices and Materials Symposium 2013(2013 IEDMS), PID:73 (P1-14), Nov. 2013, Nantou, Taiwan.
  149. W.D. Lee, W.S. Chen, M.C. Wang, J.S. Lan, M.F. Lu, H.S. Huang, J.M. Yang, S.Y. Chen, “Kink Effect for 28nm HK/MG nMOSFETs after DPN Treatment with Different Annealing Temperatures,” International Electron Devices and Materials Symposium 2013(2013 IEDMS), PID: 155 (P1-18), Nov. 2013, Nantou, Taiwan.
  150. Shih-Ming Chen , Shea-Jue Wang, Shuang-Yuan Chen , Heng-Sheng Huang, Mu-Chun Wang , Wei-Ting Huang, Tsung-Jian Tzeng, Tzyy-Ming Cheng, LS Huang, “The Influence of Nitrogen Concentrations and Annealing Temperatures on HfO2 nMOSFET Properties and PBTI Reliability,” International Electron Devices and Materials Symposium 2013(2013 IEDMS), PID:75 (P1-70), Nov. 2013, Nantou, Taiwan.
  151. Mu-Chun Wang, Jie-Min Yang, Ssu-Hao Peng, Shea-Jue Wang, Chih-Hsuan Wang, Ming-Feng Lu, Heng-Sheng Huang, Osbert Cheng, LS Huang, Shih-Ching Lee, “ Gate Leakage Characteristics for 28nm Gate-Last HK/MG NMOSFETs with PDA Process Treatment,” IEEE/ Nanotechnology Materials and Devices Conference (NMDC), paper ID: #1024_WP-4-5, Oct. 2013, Tainan, Taiwan.
  152. Mu-Chun Wang, Chun-Wei Lian, Chong-Kuan Du, Shea-Jue Wang, Ming-Feng Lu, Shuang-Yuan Chen, Osbert Cheng, LS Huang, Shih-Ching Lee, “Device Characterization for Stacked High-k/Metal Gate of NMOSFETs before and after PDA Process,” IEEE/ Nanotechnology Materials and Devices Conference (NMDC), paper ID: #1025_WP4-4, Oct. 2013, Tainan, Taiwan.
  153. Mu-Chun Wang, Chao-Wang Li, Guo-Wei Wu, Chong-Kuan Du, Shea-Jue Wang, Ming-Feng Lu, Shuang-Yuan Chen, Osbert Cheng, LS Huang, Chuan-Hsi Liu, “Punch-Through Characteristics of High-k/Metal Gate NMOSFETs before and after PDA Treatment,” IEEE/ Nanotechnology Materials and Devices Conference (NMDC), paper ID: #1029_TP-P1-5, Oct. 2013, Tainan, Taiwan.
  154. Mu-Chun Wang, Chih-Hsuan Wang, Chong-Kuan Du, Shea-Jue Wang, Ming-FengLu, Shuang-Yuan Chen, Osbert Cheng, LS Huang, Shih-Ching Lee, Chuan-Hsi Liu, “Electrical Performance for 28nm HK/MG PMOSFETs by PDA or DPN Treatment with N2 Concentrations,” IEEE/ Nanotechnology Materials and Devices Conference (NMDC), paper ID: #1063_TP-P1-6, Oct. 2013, Tainan, Taiwan.
  155. 王木俊*、彭思豪、廖文翔,“奈米製程CESL壓縮應變與不同矽覆蓋層於pMOSFET之特性與熱載子效應分析”2013電子工程技術研討會(ETS2013), 高雄, 台灣, 523 2013.
  156. Mu-Chun Wang, Chong-Kuan Du, Min-Ru Peng, Shea-Jue Wang*, Shuang-Yuan Chen, Osbert Cheng, LS Huang, Shih Ching Lee, “Device Characterizations for 28nm HfOx/ZrOx/HfOx Gate Dielectric of NMOSFET after DPN Process with Nitrogen Concentrations,” (Accepted) 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2013), paper ID: H002, May 2013, New Taipei City, Taiwan.
  157. Mu-Chun Wang, Chong-Kuan Du, Min-Ru Peng, Shea-Jue Wang*, Shuang-Yuan Chen, Osbert Cheng, LS Huang, Shih Ching Lee, “Device Performance for 28nm HfOx/ZrOx/HfOx Gate Dielectric of PMOSFET Dealing with DPN Process under N2 Concentrations,” (Accepted) 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2013), paper ID: H003, May 2013, New Taipei City, Taiwan.
  158. Mu-Chun Wang, Ssu-Hao Peng, Shea-Jue Wang*, Chong-Kuan Du, Hsin-Chia Yang, Heng-Sheng Huang, Osbert Cheng, LS Huang, Shih Ching Lee, “Gate Leakage Characteristics for 28nm Gate-Last HK/MG of NMOSFET with PDA Process Treatment,” (Accepted) 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2013), paper ID: H004, May 2013, New Taipei City, Taiwan.
  159. Mu-Chun Wang, Min-Ru Peng, Shea-Jue Wang*, Shuang-Yuan Chen, Osbert Cheng, LS Huang, Shih Ching Lee, “VT Adjustment for 28nm HfOx/ZrOx/HfOx Gate Dielectric of nMOSFET using DPN Process with Annealing Temperatures,” 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2013), paper ID: PM49, May 2013, New Taipei City, Taiwan.
  160. Mu-Chun Wang, Guo-Wei Wu, Chong-Kuan Du, Shea-Jue Wang*, Heng-Sheng Huang, Osbert Cheng, LS Huang, Shih Ching Lee, “Punch-Through Characteristics of 28nm High-k/Metal Gate NMOSFET Devices before and after PDA Treatment,” (Accepted) 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2013), paper ID: H006, May 2013, New Taipei City, Taiwan.
  161. Mu-Chun Wang, Jing-Zong Jhang, Chong-Kuan Du, Shea-Jue Wang*, Heng-Sheng Huang, Osbert Cheng, LS Huang, Shih Ching Lee, “Junction and Punch-Through Leakage Mechanisms for 28nm High-k/ Metal Gate of PMOSFET Devices after PDA Process Treatment,” (Accepted) 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2013), paper ID: H007, May 2013, New Taipei City, Taiwan.
  162. Mu-Chun Wang, Chao-Wang Li, Chong-Kuan Du, Shea-Jue Wang*, Heng-Sheng Huang, Osbert Cheng, LS Huang, Shih Ching Lee, “Early Effect for 28nm HfOx/ZrOx/HfOx Gate Dielectric of NMOSFET after Post Deposition Annealing Process,” (Accepted) 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2013), paper ID: H008, May 2013, New Taipei City, Taiwan. 
  163. Bing-Mau Chen, Mu-Chun Wang*, Chih-Hsuan Wang, Chong-Kuan Du, Shea-Jue Wang*, Heng-Sheng Huang, Osbert Cheng, LS Huang, Shih Ching Lee, “Channel-Length Modulation Effect for 28nm HK/MG PMOSFETs after Post Deposition Annealing Treatment,” 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2013), paper ID: PT49, May 2013, New Taipei City, Taiwan.
  164. Mu-Chun Wang, Chun-Wei Lian, Chong-Kuan Du, Shea-Jue Wang*, Shuang-Yuan Chen, Osbert Cheng, LS Huang, Shih Ching Lee, “Device Characterizations for 28nm High-k/Metal Gate of NMOSFET before and after PDA Process,” (Accepted) 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2013), paper ID: H010, May 2013, New Taipei City, Taiwan.
  165. Mu-Chun Wang, Chun-Wei Lian, Chong-Kuan Du, Shea-Jue Wang*, Heng-Sheng Huang, Osbert Cheng, LS Huang, Shih Ching Lee, “Performance Investigation for 28nm High-k/Metal Gate of PMOSFET with Gate-last Process before and after PDA Treatment,” (Accepted) 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2013), paper ID: H011, May 2013, New Taipei City, Taiwan.
  166. Mu-Chun Wang, Jie-Min Yang, Shea-Jue Wang*, Chong-Kuan Du, Hsin-Chia Yang, Heng-Sheng Huang, Osbert Cheng, LS Huang, Shih Ching Lee, “Gate Leakage for 28nm HfZrOx Gate Dielectric of PMOSFET after Post Deposition Annealing Process,” (Accepted) 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2013), paper ID: H012, May 2013, New Taipei City, Taiwan.
  167. Shih-Ming Chen, Mu-Chun Wang*, Min-Ru Peng, Shea-Jue Wang*, Shuang-Yuan Chen, Osbert Cheng, LS Huang, Shih Ching Lee, “C-V Characteristics for 28nm HfOx/ZrOx/HfOx Gate Dielectric of NMOSFET after DPN Process with Nitrogen Concentrations,” (Accepted) 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2013), paper ID: H013, May 2013, New Taipei City, Taiwan. 
  168. Wen-Sheng Chen, Mu-Chun Wang*, Min-Ru Peng, Shea-Jue Wang*, Shuang-Yuan Chen, Osbert Cheng, LS Huang, Shih Ching Lee, “C-V Characteristics for 28nm HfOx/ZrOx/HfOx Gate Dielectric of NMOSFET after DPN Process with Annealing Temperatures,” (Accepted) 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2013), paper ID: H014, May 2013, New Taipei City, Taiwan.
  169. Wei-Jhih Jian, Mu-Chun Wang*, Min-Ru Peng, Shea-Jue Wang*, Shuang-Yuan Chen, Osbert Cheng, LS Huang, Shih Ching Lee, “C-V Characteristics for 28nm HfOx/ZrOx/HfOx Gate Dielectric of NMOSFET before and after PDA Process,” (Accepted) 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2013), paper ID: H015, May 2013, New Taipei City, Taiwan.
  170. Mu-Chun Wang, Guo-Wei Wu, Shea-Jue Wang*, Hsin-Chia Yang*, Wen-Shiang Liao, Ming-Feng Lu, Jing-Zong Jhang, Chuan-Hsi Liu, “Body Effect of SiGe and CESL Strained Nano-node NMOSFETs on (100) Silicon Substrate,” 2nd 2013 IEEE International Symposium on Next-Generation Electronics (ISNE), pp.379 - 382, Feb. 2013, Kaohsiung, Taiwan.
  171. Mu-Chun Wang, Chong-Kuan Du, Min-Ru Peng, Shea-Jue Wang*, Shuang-Yuan Chen, Chuan-Hsi Liu*, Osbert Cheng, LS Huang, Shih Ching Lee, “Trend of Subthreshold Swing with DPN Process for 28nm N/PMOSFETs,” 2nd 2013 IEEE International Symposium on Next-Generation Electronics (ISNE), pp.389 - 392, Feb. 2013, Kaohsiung, Taiwan.
  172. Mu-Chun Wang, Jing-Zong Jhang, Shea-Jue Wang*, Hsin-Chia Yang*, Wen-Shiang Liao, Ming-Feng Lu, Guo-Wei Wu, Chuan-Hsi Liu, “Probing Moving Charge Distribution of Biaxial and CESL Strained PMOSFETs with Body Effect,” 2nd 2013 IEEE International Symposium on Next-Generation Electronics (ISNE), pp.375-378, Feb. 2013, Kaohsiung, Taiwan.
  173. Mu-Chun Wang, Ssu-Hao Peng, Shea-Jue Wang*, Hsin-Chia Yang*, Wen-Shiang Liao, Chao-Wang Li, Chuan-Hsi Liu, “Si-Capping Thicknesses Impacting Compressive Strained MOSFETs with Temperature Effect,” 2nd 2013 IEEE International Symposium on Next-Generation Electronics (ISNE), pp.361-364, Feb. 2013, Kaohsiung, Taiwan.
  174. Mu-Chun Wang, Min-Ru Peng, Liang-Ru Ji, Heng-Sheng Huang, Shuang-Yuan Chen, Shea-Jue Wang*, Hong-Wen Hsu, Wen-Shiang Liao, Chuan-Hsi Liu*, “Strained pMOSFETs with SiGe Channel and Embedded SiGe Source/Drain Stressor under Heating and Hot-Carrier Stresses,2nd 2013 IEEE International Symposium on Next-Generation Electronics (ISNE), pp.371-374, Feb. 2013, Kaohsiung, Taiwan.
  175. Hsin-Chia Yang*, Wei-Yen Peng, Wen-Shiang Liao, Guo-Wei Wu, Cheng-Yu Tsai, Mu-Chun Wang, Sung-Ching Chi, Shea-Jue Wang, “The Side Effects and the Effects of Thickness of Source/Drain Fin on P-channel FinFET Devices,” 5th 2013 IEEE International NanoElectronics Conference (INEC), paper ID:313, Jan. 2013, Singapore.
  176. Hsin-Chia Yang*, Yi-Hong Lee, Wen-Shiang Liao, Chong-Kuan Du, Jing-Zong Jhang, Sung-Ching Chi, Mu-Chun Wang, Shea-Jue Wang, “The Adjustment of Threshold Voltage on P-channel FinFET Devices,” 5th 2013 IEEE International NanoElectronics Conference (INEC), paper ID:319, Jan. 2013, Singapore.
  177. Hsin-Chia Yang*, Chong-Kuan Du, Wen-Shiang Liao, Jing-Zong Jhang, Yi-Hong Lee, Tsao-Yeh Chen, Ko-Fan Liao, Mu-Chun Wang, Sung-Ching Chi, Shea-Jue Wang, “The Side Effects on N-channel FinFET Devices,” 5th 2013 IEEE International NanoElectronics Conference (INEC), paper ID:311, Jan. 2013, Singapore.
  178. Hsin-Chia Yang, Jing-Zong Jhang, Wen-Shiang Liao, Chong-Kuan Du, Yi-Hong Lee, Sung-Ching Chi, Quan-Hao Shen, Mu-Chun Wang, Shea-Jue Wang,” Promising N-channel FinFET Devices without or with Cobalt-Silicide Applied to the Gate,” 5th 2013 IEEE International NanoElectronics Conference (INEC), paper ID:305, Jan. 2013, Singapore.
  179. Hsin-Chia Yang, Choa-Wang Li, Wen-Shiang Liao, Chong-Kuan Du, Mu-Chun Wang*, Jie-Min Yang, Chun-Wei Lian, Chuan-Hsi Liu, “The Enhancement of MOSFET Electric Performance through Strain Engineering by Refilled SiGe as Source and Drain,” 5th 2013 IEEE International NanoElectronics Conference (INEC), paper ID:422, Jan. 2013, Singapore.
  180. Hsin-Chia Yang*, Jie-Min Yang, Wen-Shiang Liao, Mu-Chun Wang, Shea-Jue Wang, Chun-Wei Lian ,Chao-Wang Li ,Chong-Kuan Du, “The Improvement of MOSFET Electric Characteristics through Strain Engineering by Refilled SiGe as Source and Drain,” 5th 2013 IEEE International NanoElectronics Conference (INEC), paper ID:429, Jan. 2013, Singapore.
  181. Min-Ru Peng, Mu-Chun Wang*, Liang-Ru Ji, Heng-Sheng Huang, Shuang-Yuan Chen, Shea-Jue Wang, Hong-Wen Hsu, Wen-Shiang Liao, “Characteristics and Hot-Carrier Effects of Strained pMOSFETs with SiGe Channel and Embedded SiGe Source/Drain Stressor,” 5th 2013 IEEE International NanoElectronics Conference (INEC), paper ID:257, Jan. 2013, Singapore.
  182. H.W. Hsu*, H. S. Huang, S. Y. Chen, M. C. Wang, K.C. Li, K. C. Lin, C. H. Liu, “Impact of Stress Induced by Stressors on Hot Carrier Reliability of Strained nMOSFETs,” 5th 2013 IEEE International NanoElectronics Conference (INEC), paper ID:237, Jan. 2013, Singapore.
  183. Hsin-Chia Yang*, Guo-Wei Wu, Wen-Shiang Liao, Wei-Yen Peng, Sung-Ching Chi, Mu-Chun Wang, Shea-Jue Wang, “Next Promising P-channel FinFET Devices without or with Cobalt-Silicide Applied to the Gate,” 5th 2013 IEEE International NanoElectronics Conference (INEC), paper ID:316, Jan. 2013, Singapore.
  184. Mu-Chun Wang, Ssu-Hao Peng, Wen-Shiang Liao, Tung-Cheng Huang, Hsin-Chia Yang, Jing-Zong Jhang, Shea-Jue Wang*, Chuan-Hsi Liu. “Nano-regime Si-Capping Thicknesses Impacting Strained pMOSFET on <110> Silicon Substrate,” 2012 IEDMS, paper ID: CP-27, Nov., 2012, Kaohsiung, Taiwan.
  185. Hsin-Chia Yang, Guo-Wei Wu, Wen-Shiang Liao, Ssu-Hao Peng, Mu-Chun Wang*, Tung-Cheng Huang, Shea-Jue Wang, “Temperature Effects on Drain Fringe Junction Capacitances of Strained pMOSFET Devices,” 2012 IEDMS, paper ID: C017, Nov., 2012, Kaohsiung, Taiwan.
  186. Hsin-Chia Yang*, Chong-Kuan Du, Wen-Shiang Liao, Jing-Zong Jhang, Yi-Hong Lee, Tsao-Yeh Chen, Mu-Chun Wang, “Fin-Thickness Effects on p-Channel FinFET Devices,” 2012 IEDMS, paper ID: DP-11, Nov., 2012, Kaohsiung, Taiwan.
  187. Hsin-Chia Yang, Chao-Wang Li, Wen-Shiang Liao, Chong-Kuan Du, Mu-Chun Wang*, Shea-Jue Wang, Chun-Wei Lian, Chuan-Hsi Liu, “Strain Effects on Nano-PMOSFET Devices Fabricated with Refilled S/D SiGe Technology,” 2012 IEDMS, paper ID: CO20, Nov., 2012, Kaohsiung, Taiwan.
  188. Hsin-Chia Yang, Jie-Min Yang, Wen-Shiang Liao, Chong-Kuan Du, Ssu-Hao Peng, Mu-Chun Wang*, Shea-Jue Wang, Chuan-Hsi Liu, Chao-Wang Li, “Strain Effects on Nano-NMOSFET Devices with Refilled S/D SiGe Process Technology,” 2012 IEDMS, paper ID: DP-10, Nov., 2012, Kaohsiung, Taiwan.
  189. Hsin-Chia Yang*, Yi-Hong Lee, Wen-Shiang Liao, Chong-Kuan Du, Mu-Chun Wang, Shea-Jue Wang, “Fin-Thickness Effects on p-Channel FinFET Devices with Cobalt Silicide as Gate,” 2012 IEDMS, paper ID: CP-01, Nov., 2012, Kaohsiung, Taiwan.
  190. Hsin-Chia Yang, Chun-Wei Lian, Wen-Shiang Liao, Chong-Kuan Du, Mu-Chun Wang*, Shea-Jue Wang, Jie-Min Yang, Chuan-Hsi Liu, “Strain Effects on Nano-NMOSFET Devices Following Refilled Source/ Drain Silicon Technology,”  2012 IEDMS, paper ID: CP-28, Nov., 2012, Kaohsiung, Taiwan.
  191. Hsin-Chia Yang*, Jing-Zong Jhang, Wen-Shiang Liao, Wei-Yen Peng, Ssu-Hao Peng, Mu-Chun Wang, Shea-Jue Wang, “Fin-Thickness Effects on n-Channel FinFET Devices with Cobalt Silicide as Gate,” 2012 IEDMS, paper ID: CP-26, Nov., 2012, Kaohsiung, Taiwan.
  192. Hsin-Chia Yang*, Wei-Yen Peng, Wen-Shiang Liao, Chong-Kuan Du, Mu-Chun Wang, Shea-Jue Wang, “Fin-Thickness Effects on the Electric Performances of PMOSFET Devices Using FinFET Structure,” 2012 IEDMS, paper ID: DP-09, Nov., 2012, Kaohsiung, Taiwan.
  193. Wei-Ting Huang, Yu Chen, Mu-Chun Wang*, Heng-Sheng Huang, Shuang-Yuan Chen, LS Huang, “Predicting Breakdown Characteristics of Nano-scaled HfO2 Gate Dielectric by Ramping Metrology,” 2012 IEDMS, paper ID: CP-29, Nov., 2012, Kaohsiung, Taiwan.
  194. Hsin-Chia Yang*, Ko-Fan Liao, Wen-Shiang Liao, Mu-Chun Wang, “Threshold Voltages of NMOSFET Devices using FinFET Structure,” 2012 IEDMS, paper ID: CP-08, Nov., 2012, Kaohsiung, Taiwan.
  195. Hsin-Chia Yang*, Cheng-Yu Tsai, Wen-Shiang Liao, Tsao-Yeh Chen, Mu-Chun Wang, “Determination of Threshold Voltages of PMOSFET Devices using FinFET Structure,” 2012 IEDMS, paper ID: CP-11, Nov., 2012, Kaohsiung, Taiwan.
  196. Hsin-Chia Yang*, Guan-Hao Shen, Wen-Shiang Liao, Tsao-Yeh Chen, Mu-Chun Wang, “Threshold Voltages of MOSFET Devices Using 3-D FinFET Structure,” 2012 IEDMS, paper ID: CP-13, Nov., 2012, Kaohsiung, Taiwan.
  197. H. W. Hsu, H. S. Huang, C. C. Lee, M. C. Wang, H. H. Teng, Y. S. Hu, M. R. Peng, H. Sekiguchi, S. Y. Chen, C. H. Liu, “Comparison of NMOSFET and PMOSFET devices that combine CESL stressor and SiGe channel,” Nano Korea 2012 Symposium, paper ID: P1201_171, Aug. 2012, Korea.
  198. Mu-Chun Wang*, Tien-Tsorng Shih, Bao-Yi Lin, Hsin-Chia Yang, Yaw-Dong Wu, Chuan-Hsi Liu, “A Study of Characteristics of Halogen-Free Prevented Solder Materials,” IEEE/ 2012 International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), pp.101-104, Aug., 2012, Guilin, China.
  199. H. W. Hsu, H. S. Huang, C. C. Lee, S. Y. Chen, H. H. Teng, M. H. Hung, M. R. Peng, M. C. Wang, C. H. Liu, “Phenomenon of nMOSFETs with CESL stressor for different channel lengths,” 6th International Conference on Technological Advances of Thin Films & Surface Coatings (ThinFilms2012), Paper ID: 2318, July, 2012, Singapore.
  200. Mu-Chun Wang*, Guo-Wei Wu, Wen-Shiang Liao, Hsin-Chia Yang, Tsao-Yeh Chen, “Junction Potential of Uniaxial CESL Strained Nano-regime pMOSFETs on <100> Silicon Wafer,” 10th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, paper number A1., May, 2012, Taiwan.
  201. Mu-Chun Wang*, Yi-Hong Lee, Wen-Shiang Liao, Chung-Kuan Du, Hsin-Chia Yang, Tsao-Yeh Chen, “Junction Potential of Strained Nano-regime nMOSFETs on <100> Silicon Wafer with Refilled Si S/D and Compressive CESL Processes,” 10th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Material Group, paper number B3., May, 2012, Taiwan.
  202. Tsao-Yeh Chen, Chung-Kuan Du, Wen-Shiang Liao, Jing-Zong Jhang, Hsin-Chia Yang, Tsao-Yeh Chen, Ming-Feng Lu, Mu-Chun Wang*, “A Study of Junction Potential of Refilled Si S/D Process for Nano-regime MOSFETs on <100> Silicon Wafer,” 10th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, paper number A3., May, 2012, Taiwan.
  203. Mu-Chun Wang*, Jing-Zong Jhang, Wen-Shiang Liao, Hsin-Chia Yang, Tsao-Yeh Chen, Ming-Feng Lu, “Nano-scale Compressive Strained CESL Impacting Junction Potential of pMOSFETs on <100> Si Wafer,” 10th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, paper number A10., May, 2012, Taiwan.
  204. Mu-Chun Wang*, Ssu-Hao Peng, Wen-Shiang Liao, Hsin-Chia Yang, Tsao-Yeh Chen, Ming-Feng Lu, “Junction Potential vs. Channel Lengths of Compressive/ Tensile Strained CESL Nano-regime nMOSFETs on <100> Silicon Wafer,” 10th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Material Group, paper number B14., May, 2012, Taiwan.
  205. Hsin-Chia Yang, Wei-Yen Peng, Wen-Shiang Liao, Ssu Hao Peng, Tsao-Yeh Chen, Mu-Chun Wang*, “Variation of Junction Potential of Nano-regime nMOSFET with Tensile Strained CESL Process on <100> Si Wafer,” 10th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Material Group, paper number B15., May, 2012, Taiwan.
  206. Mu-Chun Wang*, Kuang-Chuan Cheng, Wen-Shiang Liao, Hsin-Chia Yang, Tsao-Yeh Chen, “Nano-Scale CESL Strain and Refilled S/D SiGe Process Influencing Junction Performance on <110> Silicon Substrate,” 10th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Material Group, paper number B21., May, 2012, Taiwan.
  207. Mu-Chun Wang*, Min-Ru Peng, Wen-Shiang Liao, Shuang-Yuan Chen, Ssu-Hao Peng, Heng-Sheng Huang, “ Distinguishing Junction Breakdown and Punch-through Characteristics for Uniaxial CESL Strained Nano-regime N/PMOSFETs on <100> Silicon Substrate,” 2011 IEDMS, paper ID:086; P-C-21, Nov., 2011, Taipei, Taiwan.
  208. Hsin-Chia Yang*, Chong-Kuan Du, Wen-Shiang Liao, Yi-Jhen Li, Mu-Chun Wang, Tsao-Yeh Chen, “Promising Reliability of Refilled S/D Strained N/PMOSFET Devices Fabricated on <100> Substrate Linked to Junction Breakdown, and Punch-Through,” 2011 IEDMS, paper ID:092; P-C-22, Nov., 2011, Taipei, Taiwan.
  209. Hsin-Chia Yang*, Jing-Zong Jhang, Wen-Shiang Liao, Yi-Jhen Li, Mu-Chun Wang, “Distinguishing Reliability of CESL Strained N/PMOSFET Devices Fabricated on <110> Substrate Correlated with Junction Breakdown, and Punch-Through,” 2011 IEDMS, paper ID:090; P-D-19, Nov., 2011, Taipei, Taiwan.
  210. Hsin-Chia Yang*, Yi-Jhen Li, Wen-Shiang Liao, Mu-Chun Wang, “Distinguishing Characteristics of Refilled S/D Strained NMOSFET Devices Fabricated on <110> Substrate Associated with Junction Breakdown, and Punch-Through,” 2011 IEDMS, paper ID:084; P-D-15, Nov., 2011, Taipei, Taiwan.
  211. Hsin-Chia Yang*, Guo-Wei Wu, Wen-Shiang Liao, Yi-Jhen Li, Mu-Chun Wang, “Promising Characteristics of CESL Strained PMOSFET Devices Fabricated on <100> Substrate Correlated with Junction Breakdown, and Punch-Through,”  2011 IEDMS, paper ID:089; P-D-18, Nov., 2011, Taipei, Taiwan.
  212. Hsin-Chia Yang*, Jhe-Chuen Yeh, Wen-Shiang Liao, Mu-Chun Wang, “Distinguishing Repeatability of CESL Strained NMOSFET Devices Fabricated on <100> Substrate Associated with Junction Breakdown, and Punch-Through,” 2011 IEDMS, paper ID:083; P-C-20, Nov., 2011, Taipei, Taiwan.
  213. Heng-Sheng Huang, Liang-Ru Ji, Sheng-Jung Lin, Shuang-Yuan Chen, Mu-Chun Wang, Wen-Shiang Liao, “Characteristics of SiGe Channel and Embedded SiGe S/D Strained PMOSFETs,” 2011 IEDMS, paper ID:154 ; P-C-37, Nov., 2011, Taipei, Taiwan.
  214. Heng-Sheng Huang, Zen-Fan Huang, Kuan-Cheng Li, Shuang-Yuan Chen , Mu-Chun Wang, Wen-Shiang Liao, “Characteristics of the Hot-Carrier Effect on Strained nMOSFETs with Tensile and Compressive CESL Stressors,” 2011 IEDMS, paper ID:159 ; P-C-40, Nov., 2011, Taipei, Taiwan.
  215. Tien-Tsorng Shih, Bing-Hua Chen, Win-Der Lee, Mu-Chun Wang*, “IMC Integrity for Sn96.7‐Ag3.7 Polymer Core Solder Ball in BGA Package,” IEEE/IMPACT, paper code: TW073-1, pp.484-487, Oct., 2011, Taipei, Taiwan.
  216. Tien-Tsorng Shih, Bing-Hua Chen, Win-Der Lee, Mu-Chun Wang*, “Drop Test for Sn96.7‐Ag3.7 Polymer Core Solder Ball in BGA Package,” IEEE/IMPACT, paper code: TW073-2, pp.188-191, Oct., 2011, Taipei, Taiwan.
  217. Tien-Tsorng Shih, Bing-Hua Chen, Win-Der Lee, Mu-Chun Wang*, “Reflow Influence for Sn96.7‐Ag3.7 Polymer Core Solder Ball in BGA Package,” IEEE/IMPACT, paper code: TW073-3, pp.488-491, Oct., 2011, Taipei, Taiwan.
  218. Tien-Tsorng Shih, Wei-Chih Chen, Win-Der Lee, Mu-Chun Wang*, “Solder Stability for Pb‐free HBGA Assembly with Oxygenous Reflow,” IEEE/IMPACT, paper code: TW073-4, pp.492-495, Oct., 2011, Taipei, Taiwan.
  219. Tien-Tsorng Shih, Wei-Chih Chen, Win-Der Lee, Mu-Chun Wang*, “Nickel Solder Ball Performance for Pb‐free LFBGA Assembly under Oxygenous Reflow,” IEEE/IMPACT, paper code: TW073-5, pp.496-499, Oct., 2011, Taipei, Taiwan.
  220. Tien-Tsorng Shih, Wei-Chih Chen, Win-Der Lee, Mu-Chun Wang*, “Oxygenous Reflow Affecting Performance of Pb‐free TFBGA Assembly,” IEEE/IMPACT, paper code: TW073-6, pp.500-503, Oct., 2011, Taipei, Taiwan.
  221. Mu-Chun Wang*, Hsin-Chia Yang, Chuan-Hsi Liu, Ren-Hau Yang, “SOP Package Surface Discoloration after PCT Test,” IEEE/ 2011 International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), F-025, Aug., 2011, Shanghai, China.
  222. Mu-Chun Wang*, Long-Sian Lin, Wen-Shiang Liao, Ren-Hau Yang, Hsin-Chia Yang, Heng-Sheng Huang, “Embedded SiGe Source/Drain and Temperature Degrading Junction Performance on <110> 45 nm MOSFETs,” 4th 2011 IEEE International NanoElectronics Conference (INEC), June, 2011, Taoyuan, Taiwan.
  223. Mu-Chun Wang*, You-Ming Hu, Wen-Shiang Liao, Hsin-Chia Yang, Ren-Hau Yang, Long-Sian Lin, Ssu-Hao Peng,  Shuang-Yuan Chen, “Deterioration of Junction Performance with Temperature Effect for 45 nm Si-Capping MOSFETs on <110> Silicon Substrate,” 4th 2011 IEEE International NanoElectronics Conference (INEC), June, 2011, Taoyuan, Taiwan.
  224. Mu-Chun Wang*, Ren-Hau Yang, Wen-Shiang Liao, Hsin-Chia Yang, Yi-Jhen Li, Heng-Sheng Huang, “Nano-Scale Si-Capping Thicknesses Impacting Junction Performance on <110> Silicon Substrate,” 4th 2011 IEEE International NanoElectronics Conference (INEC), June, 2011, Taoyuan, Taiwan.
  225. Hsin-Chia Yang*, Huei-Jyun Peng, Wen-Shiang Liao, Jhe-Chuan Yeh, Mu-Chun Wang, “Study of Temperature Effects of Mobility, Swing, and Early Voltages on Strained MOSFET Devices,” 4th 2011 IEEE International NanoElectronics Conference (INEC), June, 2011, Taoyuan, Taiwan..
  226. H.-W. Chen, C.-H. Liu*, H.-W. Hsu, S.-Y. Chen, M.-C. Wang, H.-S. Huang, “Current Conduction Mechanisms of 0.65 nm Equivalent Oxide Thickness HfZrLaO Thin Films,” 4th 2011 IEEE International NanoElectronics Conference (INEC), June, 2011, Taoyuan, Taiwan.
  227. C.-H. Liu*, H.-W. Hsu, H.-W. Chen, M.-C. Wang, S.-Y. Chen, H.-S. Huang, “Time Dependent Dielectric Breakdown (TDDB) Characteristics of Metal-Oxide-Semiconductor Capacitors with HfLaO and HfZrLaO Ultra-Thin Gate Dielectrics,” 4th 2011 IEEE International NanoElectronics Conference (INEC), June, 2011, Taoyuan, Taiwan.
  228. Cheng-Huang Tsao*, Jui-Ming Tsai, Wen-Shiang Liao, Hsin-Chia Yang, Mu-Chun Wang, “Promoted Electrical Performance and Temperature Effects of Strained Short-Channel Transistors,” 9th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, paper number A4., May, 2011, Taiwan.
  229. Mu-Chun Wang*, Ren-Hau Yang, Wen-Shiang Liao, Hsin-Chia Yang, “Variation of Channel Resistance for Nano-regime MOSFETs under Different Si Capping Thickness Depositing CESL Inducing Compressive Strain on <110> Si Wafer,”  9th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Material Group, paper number B2., May, 2011, Taiwan.
  230. Hsin-Chia Yang, Yao-Yuan Hoe, Wen-Shiang Liao, Ren-Hau Yang, Mu-Chun Wang*, “Compressive/ Tensile Strained CESL Impacting Channel Resistance for Nano-regime <100> nMOSFETs,” 9th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, paper number A6., May, 2011, Taiwan.
  231. Mu-Chun Wang*, Yi-Chen Li, Wen-Shiang Liao, Ren-Hau Yang, Hsin-Chia Yang, “Channel Resistance for Nano-regime Biaxial Strained MOSFETs on <110> Silicon Substrate,” 9th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Material Group, paper number B26., May, 2011, Taiwan.
  232. Heng-Sheng Huang, Long-Sain Lin, Wen-Shiang Liao, Mu-Chun Wang*, “A Study of Channel Resistance and Temperature Effect for <110> pMOSFET with Embedded SiGe Source/Drain Technology,” 9th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Material Group, paper number B7, May, 2011, Taiwan.
  233. Shuang-Yuan Chen, You-Ming Hu, Wen-Shiang Liao, Mu-Chun Wang*, “Junction Leakage Performance with Temperature Effect for <110> 45 nm pMOSFETs Applied with Si-Capping and Refilled Source/Drain Process Technology,” 9th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, paper number A7., May, 2011, Taiwan.
  234. Mu-Chun Wang*, Kuo-Hua Wu, Wen-Shiang Liao, Ren-Hau Yang, Hsin-Chia Yang, “Variation of Channel Resistance for Nano-regime pMOSFETs under Refilled S/D SiGe Strain and Different Si Capping Thicknesses on <110> Si Wafer,” 9th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Material Group, paper number B3., May, 2011, Taiwan.
  235. Hsin-Chia Yang, Min-Ru Peng, Wen-Shiang Liao, Ren-Hau Yang, Mu-Chun Wang* , “Resistor Characteristics of Uniaxial CESL Strained Nano-regime nMOSFETs on <100> Silicon Wafer,” 9th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, paper number A5., May, 2011, Taiwan.
  236. Wen-Shiang Liao, Yi-Sin Peng, Hsin-Chia Yang, Ren-Hau Yang, Mu-Chun Wang*, “ Junction Leakage Efficiency for Nano-regime nMOSFETs between Si Capping Layers on <110> Wafer and Conventional <100> Wafer,” 9th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, paper number A18., May, 2011, Taiwan.
  237. Wen-Shiang Liao, Yi-Sin Peng, Hsin-Chia Yang, Ren-Hau Yang, Mu-Chun Wang* , “Nano-regime pMOSFET Channel Resistance with Non-strained <100> and Strained <110> Wafers,” 9th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, paper number A19., May, 2011, Taiwan.
  238. Hsin-Chia Yang, Yi-Cheng Luo, Wen-Shiang Liao, Ren-Hau Yang, Mu-Chun Wang* , “A Study to Channel Resistance for <100> Strained PMOSFETs with Different Si Capping Layers,” 9th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, paper number A20, May, 2011, Taiwan.
  239. Mu-Chun Wang, Ren-Hau Yang, Wen-Shiang Liao, Hsin-Chia Yang, Yi-Cheng Luo, Zhen-Ying Hsieh, Heng-Sheng Huang, “Mobility Enhancement on Nano-strained NMOSFET with Epitaxial Silicon Buffer Layers,” 2010 IEEE International Symposium on Next-Generation Electronics, pp. 237-240, Nov. 2010, KaoHsiung, Taiwan.
  240. Mu-Chun Wang, Hsin-Chia Yang, Wen-Shiang Liao, Hsiu-Yen Yang, Yao-Yuan Hoe, Kuang-Hung Lin, Shuang-Yuan Chen, “CESL Deposition Promoting n/p MOSFETs under 45-nm-node Process Fabrication,” 2010 IEEE International Symposium on Next-Generation Electronics, pp. 17-20, Nov. 2010, KaoHsiung, Taiwan.
  241. Chiao-Lo Chiang , Mu-Chun Wang, Yu-Min Chung, Chung-Ming Chu, Shou-Kong Fan, Chin-Chia Kuo, I-Shan Yen, “ELFR Experiment Test Verifying Anomaly of Nano-DRAM Products in W-Plug Process,” 2010 IEEE International Symposium on Next-Generation Electronics, pp. 250-253, Nov. 2010, KaoHsiung, Taiwan.
  242. Hsin-Chia Yang, Wen-Shiang Liao, Min-Ru Peng, Mu-Chun Wang, Zhen-Ying Hsieh, Shuang-Yuan Chen, Heng-Sheng Huang, “Study of Nano-regime Strained MOSFETs with Temperature Effect,” 2010 IEEE International Symposium on Next-Generation Electronics, pp. 186-189, Nov. 2010, KaoHsiung, Taiwan.
  243. Long-Sian Lin, Mu-Chun Wang, Wen-Shiang Liao, Shuang-Yuan Chen, Wei-Luen Huang, Heng-Sheng Huang, “Temperature Dependence of Carrier Mobility Variation in Nanoscale Strained (110) MOSFETs,” 2010 International Electron Devices and Materials Symposia (IEDMS), paper number: P-B-25, Nov. 2010, Taoyuan, Taiwan.
  244. Hsin-Chia Yang , Min-Ru Peng, Wen-Shiang Liao, Mu-Chun Wang, Shuang-Yuan Chen, Heng-Sheng Huang, “Characteristics of Uni-axial Strained Nano-scale nMOSFETs with CESL Process on <100> Silicon Substrate,” 2010 International Electron Devices and Materials Symposia (IEDMS), paper number: P-D-14, Nov. 2010, Taoyuan, Taiwan.
  245. Hsin-Chia Yang, Yi-Cheng Luo, Wen-Shiang Liao, Mu-Chun Wang  , Shuang-Yuan Chen, Heng-Sheng Huang, “A Study on N/P-Type Short / Long Channel Strained Devices on <100> Substrate with Various Thicknesses of Si-Cap Layer at Different Testing Temperatures,” 2010 International Electron Devices and Materials Symposia (IEDMS), paper number: P-D-35, Nov. 2010, Taoyuan, Taiwan.
  246. Hsin-Chia Yang, Huei-Jyun Peng, Wen-Shiang Liao, Mu-Chun Wang, Shuang-Yuan Chen, Heng-Sheng Huang , “Performance of Nanoscale Strained PMOSFET Devices Measured at Different Temperatures,” 2010 International Electron Devices and Materials Symposia (IEDMS), paper number: P-D-32, Nov. 2010, Taoyuan, Taiwan.
  247. Hsin-Chia Yang, Yao-Yuan Hoe, Wen-Shiang Liao, Mu-Chun Wang, Shuang-Yuan Chen, Heng-Sheng Huang, “N/PMOSFET Characteristics Fabricated on <100> Silicon Substrate Using Strained Technology at Different temperatures,” 2010 International Electron Devices and Materials Symposia (IEDMS), paper number: P-D-33, Nov. 2010, Taoyuan, Taiwan.
  248. Shuang-Yuan Chen, Kuan-Cheng Li, Kuang-Hung Lin, Heng-Sheng Huang, Mu-Chun Wang, Wen-Shiang Liao, “Characterization of Strained MOSFETs with Tensile and Compressive CESL Stressors,” 2010 International Electron Devices and Materials Symposia (IEDMS), paper number: P-B-13, Nov. 2010, Taoyuan, Taiwan.
  249. Mu-Chun Wang, Kuo-Shu Huang, Shuang-Yuan Chen, Zhen-Ying Hsieh, Hsin-Chia Yang, Chuan-Hsi Liu, Chii-Ruey Lin, “Efficiency of Dispenser with Nozzle Technology in Assembly,” IEEE/ 2010 International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), pp. 476-479, Aug., 2010, Xi’an, China.
  250. Mu-Chun Wang, Kuo-Shu Huang, Zhen-Ying Hsieh, Hsin-Chia Yang, Chuan-Hsi Liu, Chii-Ruey Lin, “A Study to Performance of Electroplating Solder Bump in Assembly,” IEEE/ 2010 International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), pp.794-797, Aug., 2010, Xi’an, China.
  251. Mu-Chun Wang, Kuo-Shu Huang, Zhen-Ying Hsieh, Hsin-Chia Yang, Chuan-Hsi Liu, Chii-Ruey Lin, “Performance of Silver-Glue Attachment Technology in Assembly,” IEEE/ 2010 International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), p. 472-475, Aug., 2010, Xi’an, China.
  252. Wen-Shiang Liao, Hsiu-Yen Yang, Zhen-Ying Hsieh, Hsin-Chia Yang, Mu-Chun Wang, “A Study of 45-nm n/p Strained Silicon Transistors with Different Silicon Capping Thicknesses,” 2010 8th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, pp., May, 2010, Taiwan
  253. Wen-Shiang Liao, Ren-Hau Yang , Zhen-Ying Hsieh, Hsin-Chia Yang, Mu-Chun Wang, “DIBL Metrology Analyzing SiO2 Buffer Layer Impacting 45-nm Strained Silicon nMOSFET,” 2010 8th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, pp., May, 2010, Taiwan
  254. Wen-Shiang Liao, Fu-Yu You, Zhen-Ying Hsieh, Hsin-Chia Yang, Mu-Chun Wang, “The Carrier Transport of N/P Silicon-Strained Transistors in <100> and <110> Plane Orientation,” 2010 8th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, pp., May, 2010, Taiwan
  255. Wen-Shiang Liao, Shih-Ying Chang, Zhen-Ying Hsieh, Hsin-Chia Yang, Mu-Chun Wang, “Characteristics of 45-nm Strained PMOSFETs Deposited with Stressed Silicon-Nitride Film,” 2010 8th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Device Group, pp., May, 2010, Taiwan
  256. Zhen-Ying Hsieh, Yao-Yuan Hoe, Hsin-Chia Yang, Wen-Shiang Liao, Mu-Chun Wang, “N/PMOSFET Characteristics with <110> Silicon Substrate under Uni-axial Strain,” 2010 8th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Material Group, pp., May, 2010, Taiwan
  257. Hsin-Chia Yang, Min-Ru Peng, Zhen-Ying Hsieh , Wen-Shiang Liao, Mu-Chun Wang, “Characteristics of Uni-axial Strained Nano-scaled nMOSFETs with CESL Process on <100> Silicon Substrate,” 2010 8th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Material Group, pp., May, 2010, Taiwan
  258. Hsin-Chia Yang, Huei-Jyun Peng, Zhen-Ying Hsieh, Wen-Shiang Liao, Mu-Chun Wang, “Investigation of Nano-scaled Uni-axial Strained MOSFETs with S/D SiGe Process,” 2010 8th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Material Group, pp., May, 2010, Taiwan
  259. Hsin-Chia Yang, Yi-Cheng Luo, Zhen-Ying Hsieh, Wen-Shiang Liao, Mu-Chun Wang, “A Study of p-channel Strained Device on <110> Silicon Substrate with Epi-Si Buffer Layer,” 2010 8th Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Material Group, pp., May, 2010, Taiwan
  260. Shuang-Yuan Chen, Kuang-Hung Lin, Chia-Hao Tu, Po-Yi Wu, Heng-Sheng Huang,Mu-Chun Wang, Ze-Wei Jhou, Cheng-Jyi Chang, Sam Chou, and Joe Ko, “CHC and NBTI Effects on PMOSFETs Having Different Vt Implants in 65 nm Technology,” 2009 International Electron Devices and Materials Symposia (IEDMS), paper number 213., Nov. 2009, Taoyuan, Taiwan.
  261. Mu-Chun Wang, Hsiang-Lin Yang, Zhen-Ying Hsieh, Chen-Nan Lin, Chung-Ming Chu, Shou-Kong Fan, “An Efficient Metrology to Sense Micro-metal Contamination in Fine-Pitch Package,” IEEE/IMPACT, pp. 648-651, Oct., 2009, Taipei, Taiwan
  262. Mu-Chun Wang, Zhen-Ying Hsieh, Kuo-Shu Huang, Chiao-Hao Tu, Shuang-Yuan Chen, Heng-Sheng Huang, “A Study to Stencil Printing Technology for Solder Bump Assembly,” IEEE/IMPACT, pp. 231-234, Oct., 2009, Taipei, Taiwan
  263. Mu-Chun Wang, Zhen-Ying Hsieh, Kuo-Shu Huang, Chuan-Hsi Liu, Chii-Ruey Lin, “Analysis of Promising Copper Wire Bonding in Assembly Consideration,” IEEE/IMPACT, pp.108-111, Oct., 2009, Taipei, Taiwan (最佳學生論文獎候選名單之一)
  264. Mu-Chun Wang, Kuo-Shu Huang, Zhen-Ying Hsieh, Hsiang-Lin Yang, Shuang-Yuan Chen, Shou-Kong Fan, “Influence of Plastic Assembly Yield with Molding Technology,” IEEE/IMPACT, pp. 652-655, Oct., 2009, Taipei, Taiwan
  265. Mu-Chun Wang, Kuo-Shu Huang, Zhen-Ying Hsieh, Chiao-Hao Tu, Shuang-Yuan Chen, Heng-Sheng Huang “Efficiency Analysis of Electroplating Gold Bump in Assembly,” IEEE/IMPACT, pp.656-659, Oct., 2009, Taipei, Taiwan
  266. Mu-Chun Wang, Hsiang-Lin Yang, Chen-Nan Lin, Fu-Chun Huang, Shou-Kong Fan, “Integrated-Circuit Failure Analysis Contaminated by Metal Particle in Package Process,” 2009 7h Conference on Microelectronics Technology and Applications at National KaoHsiung Marine University, Semiconductor Package Group, pp., May, 2009, Taiwan.
  267. Shuang-Yuan Chen, Shih-Hong Chien, Chia-Hao Tu, Li-Wei Wu, Heng-Sheng Huang, Mu-Chun Wang, Ssu-Han Wu, Cheng-Jyi Chang, Sam Chou, and Joe Ko, “Elevated Temperature Hot-Carrier Effects on 90 nm Narrow-Width nMOSFETs,” 2008 International Electron Devices and Materials Symposia (IEDMS), CP512, pp.1-4, Nov. 2008, Taichung, Taiwan.
  268. Shuang-Yuan Chen, Po-Yi Wu, Chia-Hao Tu, Ai-Erh Chuang, Heng-Sheng Huang, Mu-Chun Wang, Ze-Wei Jhou, Cheng-Jyi Chang, Sam Chou, and Joe Ko, “Bias Temperature Instability and Hot-Carrier Effects on 90 nm Node MOSFETs,” 2008 International Electron Devices and Materials Symposia (IEDMS), CP509, pp. 1-4, Nov. 2008, Taichung, Taiwan.
  269. S. Y. Chen, C. H. Tu, M. C. Wang, S. H. Wu, Z. W. Jhou, C. J. Chang, J. Ko and H. S. Haung,“ Modeling of Substrate Current of MOSFETs under Different Gate Biases and Temperatures,” 2008 International Conference on Solid State Devices and Materials (SSDM2008), pp432-433, Sept. 2008, Tsukuba, Japan.
  270. Mu-Chun Wang, Zhen-Ying Hsieh, Kuo-Su Huang, Shuang-Yuan Chen, Heng-Sheng Huang, ” Back-Side Wafer Grinding Quality Affecting Back-End Assembly Process for LCD Driver ICs,” 2008 ASME/ International Conference and Exhibition on Integration and Commercialization of Micro and Nano-systems, MNC-2008_70014, June, 2008, Hong-Kong, China.
  271. Mu-Chun Wang, Zhen-Ying Hsieh, Kuo-Su Huang, Shuang-Yuan Chen, Heng-Sheng Huang, ” Investigation of Dicing Saw Methods Impacting Back-End Assembly Process,” 2008 ASME/ International Conference and Exhibition on Integration and Commercialization of Micro and Nano-systems, MNC-2008_70015, June, 2008, Hong-Kong, China.
  272. Mu-Chun Wang, Kuo-Su Huang, Zhen-Ying Hsieh, Shuang-Yuan Chen, Heng-Sheng Huang, ” Avoidance of Bonding Pad Contamination Affecting Back- End Assembly Process,” 2008 ASME/ International Conference and Exhibition on Integration and Commercialization of Micro and Nano-systems, MNC-2008_70016, June, 2008, Hong-Kong, China.
  273. M.C. Wang, Z.Y. Hsieh , C.H. Tu , S.Y. Chen , H.W. Chen , A.E. Chuang, H.S. Huang , Sam Chou,” Extra-Inversion Charge Enhancing Substrate Current During Increased Substrate Bias in 90nm Process,” 213th  ECS Meeting, H6_1066, May 2008, Phoenix, USA.
  274. M.C. Wang, K.S. Huang, Z.Y. Hsieh, H.S. Huang,” Promotion of ESD-CDM Immunity in Dicing Saw Process,”213th  ECS Meeting, E3_0721, May 2008, Phoenix, USA.
  275. 王木俊、陳雙源、莊愛爾、謝禎穎、周昇元、黃恆盛,使用閘極二極體量測方法探討以90奈米製程不同氧化層厚度pMOSFET之負偏壓溫度不穩定性,” 2008 第六屆微電子技術發展與應用研討會, 系統元件組, pp.128-133, 五月, 2008, 高雄 台灣. 
  276. Mu-Chun Wang, Chih-Chin Lo, Zhen-Ying Hsieh, and Yin-Chin Chu, ,” Analysis of Device Integrity with Micro-Cleaving Technology in Advanced Copper Process,” 2008 International Academic Conference at Ming-Chuan University, Electronic Group, pp.1-7, Mar., 2008, Taoyan, Taiwan.
  277. Mu-Chun Wang, Kuo-Su Huang, and Jen-lung Su,” Analysis and Avoidance of Bonding Pad Contamination Impacting Back- End Assembly Process,” 2008 International Academic Conference at Ming-Chuan University, Electronic Group, pp.36-41, Mar., 2008, Taoyan, Taiwan.
  278. Mu-Chun Wang, Kuo-Su Huang, and  Ping-Shing Jiang,” Analysis of Dicing Saw Methods Influencing Back-End Assembly Process,” 2008 International Academic Conference at Ming-Chuan University, Electronic Group, pp.80-88, Mar., 2008, Taoyan, Taiwan
  279. Mu-Chun Wang, Kuo-Su Huang, and  Yi-Chiun Deng,” Analysis of Back-Side Wafer Grinding Quality Impacting Back- End Assembly Process,” 2008 International Academic Conference at Ming-Chuan University, Electronic Group, pp.60-65, Mar., 2008, Taoyan, Taiwan.
  280. Mu-Chun Wang, Kuo-Su Huang, and  Shiang-Lin Yang,” Analysis and Improvement of CDM/ESD Immunity in Back- End Assembly Process,” 2008 International Academic Conference at Ming-Chuan University, Electronic Group, pp.54-59., Mar., 2008, Taoyan, Taiwan.
  281. Mu-Chun Wang, Zhen-Ying Hsieh, Wu-Chieh Wen, Tung-Hsien Lee, Heng-Sheng Huang, Sam Chou, “A Study of Thermal Voltage Enhancing Substrate Current in NMOSFETs with 90nm CMOS Process,” 2007 International Electron Devices and Materials Symposia (IEDMS), PA-9, pp.1-3, Nov., Hsinchu, Taiwan.
  282. Mu-Chun Wang, Zhen-Ying Hsieh, Ming-Hsien Weng, Wen-Kuo Yeh, and Hsing-Yuan Chu, “A Metrology to Expose AA Shift with Improved Kelvin Measurement for 110nm Trench DRAM,” 2007 International Electron Devices and Materials Symposia (IEDMS), A2-5, pp.1-3, Nov., Hsinchu, Taiwan.
  283. S. Y. Chen, A. R. Chuang, C. H. Tu, M. H. Lin, Z. Y. Hsieh, M. C. Wang, S. H. Wu, S. Jhou, J. Ko, and H. S. Haung, “The Comparison of the Worst Test Condition on NBTI and Hot-Carrier Reliability for 0.13 μm MOSFETs,” 2007 International Electron Devices and Materials Symposia (IEDMS), PC-18, pp.1-4, Nov. 2007, Hsinchu, Taiwan.
  284. C. H. Tu, S. Y. Chen, M. H. Lin, Z. Y. Hsieh, M. C. Wang, S. H. Wu, S. Jhou, J. Ko, and H. S. Haung, “The Switch of the Worst Case on NBTI and Hot Carrier Reliability for 0.13 um PMOSFETs ,“ 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), pp207-208, Nov. 2007, Takyo, Japan.
  285. Mu-Chun Wang, Ming-Hsien Weng, Zhen-Ying Hsieh, Chiao-Hao Tu, Shuang-Yuan Chen, Heng-Sheng Huang, Wen-Kuo Yeh, and Hsing-Yuan Chu, “A Metrology to Explore Collar TEOS Integrity of Deep-Submicron DT DRAM Capacitor with a Vertical Parasitic NMOSFET,” 1st  IEEE-NANOMED Conference, Aug. 6-9, 2007, Macau, China.
  286. 王木俊、翁銘賢、謝禎穎、李東憲、溫武傑、葉文國、車行遠, “Kelvin量測方式以驗證深次微米DRAM製程中之DT-AA偏移量,” 2007 第五屆微電子技術發展與應用研討會, 系統元件組, 五月, 2007, 高雄 台灣.
  287. 王木俊、翁銘賢、謝禎穎、李東憲、溫武傑、葉文國、車行遠, “利用側壁垂直寄生BJT電晶體電流增益值之變化作為DRAM深溝槽電容頸區漏電與襯墊氧化層品質之檢測,” 2007 第五屆微電子技術發展與應用研討會, 系統元件組, 五月, 2007, 高雄 台灣.
  288. 王木俊、李東憲、謝禎穎、翁銘賢、溫武傑、陳雙源、周昇元、黃恆盛, “90奈米製程N-MOS電晶體在不同氧化層厚度下基底電流對溫度變化之分析,” 2007 第五屆微電子技術發展與應用研討會, 系統元件組, 五月, 2007, 高雄 台灣.
  289. 王木俊、何紹民、謝禎穎、陳雙源、涂家豪、蕭學鈞, “/汲極離子佈植能量對快閃記憶體寫入速度之研究,” 2007 第五屆微電子技術發展與應用研討會, 系統元件組, 五月, 2007, 高雄 台灣.
  290. 陳雙源、何紹民、涂家豪、謝禎穎、王木俊、吳思漢、周昇元, “PMOSFETDAHCCHCNBTI應力下最劣化之研究,” 2007 第五屆微電子技術發展與應用研討會, 系統元件組, 五月, 2007, 高雄 台灣.
  291. Mu-Chun Wang, Wu-Chieh Wen, Tung-Hsien Lee, Ming-Hsien Weng, Ching-Sheng Yang, Chia-Hung Lin, and  Cheng-Yi Liu,” Defects of AA Layer Analysis and Improvement in Deep-submicron DRAM Process,” 2007 International Academic Conference at Ming-Chuan University, Electronic Group, pp.100-107, Mar., 2007, Taoyan, Taiwan.
  292. Mu-Chun Wang, Zhen-Ying Hsieh, Shuang-Yuan Chen, Heng-Sheng Huang,” Investigation of Contribution Ratio between NBTI and HC Effects in PMOSFETs under Deep-Submicron Process,” 2007 ASME/ International Conference on Integration and Commercialization of Micro and Nano-systems, Micro and Nano Devices, MNC-2007_21082, Jan. 2007, Sanya China.
  293. K. C. Chen, W. C. Lin, J. C. Lin, S. Y. Chen, C. H. Liu, P.W. Kao, M. C. Wang, and H. S. Huang,” Comprehensive Study of Pocket Implant Angles on Digital and Analog Performances of 90 nm Technology Node MOSFETs,” 2006 International Electron Devices and Materials Symposia (IEDMS), PD080, pp.467-469, Dec., Tainan Taiwan
  294. Shuang-Yuan Chen, Meng-Hong Lin, Jung-Chun Lin, Po-Wei Kao, Ze-Wei Jhou, Mu-Chun Wang, and Heng-Sheng Huang,” The Switches of the Worst Hot Carrier Degradation Conditions for pMOSFETs,” 2006 International Electron Devices and Materials Symposia (IEDMS), PD087, pp.486-488, Dec. 2006, Tainan Taiwan
  295. Mu-Chun Wang, Yung-Chen Chen , Shuang-Yuan Chen, Heng-Sheng Huang, “ECR Plasma-Enhanced Au/Al Bondability in Fine-Pad-Pitch BGA Assembly,” 1st  IEEE conference on IMPACT, pp.193-196, Oct. , 2006, Taipei, Taiwan.
  296. 王木俊、郭威忠、李東憲、葉文國、車行遠, “0.11微米DRAM製程中之溝槽式ONO 細胞電容器在高溫操作下之品質研究,” 2006 第四屆微電子技術發展與應用研討會, 系統元件組, 五月, 2006, 高雄 台灣.
  297. 王木俊、劉智銓、謝禎穎、徐見英、翁銘賢, ” 藉著韋伯與對數常態機率分佈以探討TDDB生命期萃取法,” 2006 第四屆微電子技術發展與應用研討會, 半導體材料組, 五月, 2006, 高雄 台灣.
  298. Mu-Chun Wang, Zhen-Ying Hsieh, Chih-Chuan Liu, Wei-Chung Kuo, and Shyng Yeuan Che,” Subthreshold Swing for Threshold Voltage Measurement,” 2006 International Academic Conference at Ming-Chuan University, Electronic Group, pp.38-43, Mar., 2006, Taiwan.
  299. Mu-Chun Wang, Yu-Jie Liao, Chiung-Lung Chang, Guang-Yi Yeh, and Forest Shen, “Distinction of Contribution Ratio in NBTI and HC Effects of PMOSFETs under Deep-submicron Process,” 2005 International Academic Conference at Ming-Chuan University, Electronic Group, pp12-19, Mar., 2005, Taiwan.
  300. M.-D. Ker, K.-K. Hung, H. Tang, S.-C. Huang, S.-S. Chen, and M.-C. Wang, “Novel diode structures and ESD protection circuits in a 1.8-V 0.15-μm partially-depleted SOI salicided CMOS process,”2001 International Symposium on Physics and Failure Analysis of Integrated Circuits (IPFA), pp91-96, Singapore, July 2001
  301. Howard T.H. Tang, S.C. Huang, S.S. Chen, L.S. Huang, M.C. Wang, and Y.T. Loh, “A Novel Deep-Submicron ESD Design Margin with TLP Experimental Verification”, 29th Proceedings Electrostatics Society of America (ESA) Annual Meeting 2001,pp239-244, June 2001.
  302. M.-D. Ker, K.-K. Hong, T.-Y. Chen, H. Tang, S.-C. Huang, S.-S. Chen, C.-T. Huang, M.-C. Wang, and Y.-T. Loh, “Investigation on ESD robustness of CMOS devices in a 1.8-V 0.15-μm partially-depleted SOI salicide CMOS technology”, IEEE/ 2001 International Symposium on VLSI Technologies, Systems and Applications, Taiwan,  pp41-44, Apr. 2001.
  303. M.-D. Ker, W.-Y. Lo, T.-Y. Chen, H. Tang, S.-S. Chen, and M.-C. Wang, “Compact layout rule extraction for latchup prevention in a 0.25-μm shallow-trench-isolation silicided bulk CMOS process”, IEEE/ 2001 International Symposium on Quality Electronic Design (ISQED), San Jose, CA. USA, pp267-272, Mar. 2001.
  304. M.C. Chen, C.W. Wu, C.W. Tsai, and T. Wang; Y.C. Liu, L.S. Huang, M.C. Wang, and L.C. Hsia, “Stress Induced Gate-Width Edge Effects in STI pMOSFETs”, 2000 International Electron Devices and Materials Symposia, pp50-53, Dec. 2000.
  305. Y.Y. Lin, S.C. Kao, L.S. Huang, M.C. Wang, L.C. Hsia, “Investigation of Oxygen Plasma Characteristics to Optimize SOI Wafer Fabrication”, 2000 International Electron Devices and Materials Symposia (IEDMS), pp141-144, Dec. 2000.
  306. S. Huang-Lu, C.T. Huang, T. Lin, S.C. Kao, M.T. Lee, J. Wang, Y.C. Sheng, M.C. Wang, and L.C. Hsia, “ The process Impact on Negative Bias Temperature Instability (NBTI) of p+ Polysilicon gate PMOS”, 2000 International Electron Devices and Materials Symposia, pp86-89, Dec. 2000.
  307. Howard T.H. Tang, S.S. Chen, S.C. Huang, Chen-Wei Lee, Sam Chou, M.C. Wang, and L.C. Hsia, “Promotion of ESD Robustness with PESD Implant in Deep Submicron Process”, 2000 International Electron Devices and Materials Symposia (IEDMS), pp78-81, Dec. 2000.
  308. C.W. Tsai, S.H. Gu, L.P. Chiang, Tahui Wang; Y.C. Liu, L.S. Huang, M.C. Wang, and L.C. Hsia, “Valence-Band Tunneling Enhanced Hot carrier Degradation in Ultra-Thin Oxide nMOSFETs”, IEEE/ 2000 International Electron Devices and Materials (IEDM), Session 6, Dec. 2000.
  309. S. Huang-Lu, C.T. Huang, T. Lin, S.C. Kao, M.T. Lee, J. Wang, Y.C. Sheng, M.C. Wang, and L.C. Hsia, “Negative Bias Temperature Instability (NBTI) of p+ Polysilicon Gate PMOS due to p-LDD Contribution”, 2000 Microelectronics Reliability and Qualification Workshop, ppVI.7, Oct. 2000.
  310. C. J. Huang, Y. C. Liu, S. F. Hong, Auter Wu, M. C. Wang, Sungmu Hsu, L. C. Hsia, Y. J. Chang, Y. T. Lo, and Fu-Tai Liu “A Novel p-channel Flash EEPROM Cell with Simple Process and Low Power Consumption”, 2000 Solid State Devices and Materials (SSDM), C5, pp278-279, Aug. 2000.
  311. Howard Tang, S.S. Chen, Scott Liu, M.. Lee, C.H. Liu, M.C. Wang, and L.C. Hsia, “An ESD Solution with Cascode Structure for Deep-Submicron IC Technology”, 28th Proceedings Electrostatics Society of America (ESA) Annual Meeting 2000, pp204-209, June 2000.
  312. L.P. Chiang, C.W. Tsai, T. Wang; U.C. Liu, M.C. Wang, and L.C. Hsia, “Auger Recombination Enhanced Hot Carrier Degradation in nMOSFETs with Positive Substrate Bias”, IEEE/ 2000 Symposium on VLSI Technology, pp132-133, June 2000.
  313. C.H. Liu, Tun-Jen Cheng, Mu-Chun Wang, Yang, S.H., Fu, K.Y. , “Modeling and Correlation of Gate Oxide Q/sub BD/ between Exponential Current Ramp and Constant Current Stresses”, IEEE/ 1999 International Symposium on VLSI Technologies, Systems and Applications, Taiwan, pp 94-95, June 1999.

[其他]

  1. 王木俊, “生命改變享受無限 2016全國大專基督徒教職員事工研討會, pp.82-84, 苗栗/西湖渡假村, July 31-Aug. 02, 2016.
 

技術報告

 

【合作對象】: 聯華電子公司與北科大

  1. Mu-Chun Wang, “Investigation of ultra-gate oxide characterization and establishment of device reliability metrology in deep-submicron processes,” published by 高立圖書 July 2005, ISBN:986-412-262-2. (http://www.gau-lih.com.tw)
  2. 王木俊/黃恆盛, “在奈米製程下,銅金屬導線之電子遷移與肌膚效應結合後,在射頻頻率範圍操作中,共伴效應之研究,” 國科會計劃結案報告(計劃編號: 96-2221-E-159-017) 2008 9

 

【其他】

< 專利 >

【合作對象】: 聯華電子公司

Item

國別

發明名稱

獲權日

專利號

1

Method of testing a transistor

2000/4/18

6,051,986

2

電晶體檢測方法

1999/7/1

105875

3

短通道元件

2001/4/11

130,147

4

監測天線效應之結構

2000/1/11

111447

5

Structure of an antenna effect monitor

1999/9/28

5,959,311

6

感測不對稱天線效應的電路設計

1999/12/1

109681

7

Circuit for evaluating an asysmetric antenna effect

2001/5/8

6,229,347

8

避免互補式金氧半導體的井對閘極氧化層造成損害的方法

2000/2/1

111435

9

Method for preventing damage to gate oxide from well in complementary metal-oxide semiconductor

2000/5/9

6,060,347

10

辨識金屬電漿效應的方法

2001/6/16

135395

11

閘氧化層良率統計方法

2000/5/11

114778

12

Statistical method of monitoring gate oxide layer yield

2001/9/11

6,289,291

13

Reliability testing method of dielectric thin film

2001/7/31

6,269,315

14

保護閘極氧化層及檢測閘極氧化層損傷的方法

2000/7/1

117076

15

Method for protecting gate oxide layer and monitoring damage

2001/9/18

6,291,285

16

半導體元件的製造方法

2000/9/1

120056

17

保護閘極氧化層的方法

2001/6/16

135406

18

Method of protecting gate oxide

2001/8/14

6,274,494

19

晶圓的測試方法及其測試鍵之結構

2001/5/16

132318

20

Wafer acceptance testing method and structure of a test key used in the method

2001/2/20

6,191,602

21

Method of preventing damages of gate oxides of a semiconductor wafer in a plasma-related process

2000/12/12

6,159,864

22

一種防止一半導體晶片之閘極氧化墊於一電漿製程中受光學或粒子因波動現象而造成之損害的方法

2000/8/1

119353

23

監測ppid效應的量測方法

2001/3/21

129258

24

降低銲墊阻值的銲墊製造方法

2001/3/21

129270

25

作為靜電放電防護之互補式金氧半導體(CMOS)矽調節整流器(SCR)的結構

2001/5/25

133,728

26

具有共放電線之靜電放電防護電路

2001/11/11

144,074

 

 

 

Item

國別

發明名稱

獲權日

專利號

27

Electrostatic discharge protective circuitry equipped with a common discharge line

2005/3/29

6,873,505

28

Low triggering voltage soi silicon-control-rectifier (scr) structure

2001/6/5

6,242,763

29

具有低引發電壓矽調整流器之絕緣層上有矽的結構

2001/5/1

132,801

30

保護元件及其製造方法

2001/4/11

130,444

31

Method of fabricating protection structure

2001/9/18

6,291,281

32

Method of protecting a well at a floating stage

2001/6/12

6,245,610

33

浮置井的保護方式及結構

2001/4/1

129593

34

降低電漿損壞的方法

2001/4/21

131,282

35

Method for reducing plasma charging damages

2001/5/22

6,235,642

36

Method for avoiding plasma damage

2000/8/29

6,110,841

37

改善電漿損害的方法

2001/4/11

130,341

38

用以連接不同金屬層之介層窗插塞的配置架構

2001/5/16

132,346

39

Via-plug layout structure for connecting different metallic layers

2002/11/19

6,483,045

40

靜電放電保護結構及其製造方法

2003/5/21

178,232

41

Electrostatic discharge protection structure and a method for forming the  same       

2005/4/12

6,878,581

42

保護層的製造方法

2002/1/1

148,105

43

用於量測內層介電層介電常數及極性效應的半導體結構

2002/1/1

148,539

44

防範蓄積電漿損壞的半導體元件

2001/10/11

142485

45

防範製程引發蓄積電荷損壞的半導體元件

2002/1/21

149526

46

Semiconductor device for preventing process-induced charging damages

2002/9/10

6,448,599

47

Method of determing integrity of a gate dielectric

2003/6/24

6,583,641

48

閘極介電層崩潰的測試方法

2002/10/11

164099

49

護環結構

2002/8/1

160270

50

Cross guard-ring structure to protect the chip crack in low dielectric constant and copper process

2002/9/24

6,455,910

51

一種護環結構

2002/5/1

155913

52

CMOS silicon-control-rectifier (SCR) structure for electrostatic discharge (ESD) protection

2007/5/15

7217980B2

53

真空排氣抗噪系統

2020/12/1

M604966

 

 

< 評論 >

  1. Sidebar for Tim Tuner’s paper “Requirements for Dual-damascene Cu-linewidth Resistivity Measurements”, Solid State Technology, pp 89-96 , May 2000

 

論文或計畫審核委員

  1. IEEE Transactions on Device and Materials Reliability, 2007/2008/2012, 論文審核委員
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  3. Applied Physics Letters, 2011, 論文審核委員
  4. 大葉大學期刊, 2007, 論文審核委員
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  6. 明新科技大學/明新學報, 2009-2011 編輯委員
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  176. 中華民國教授學會 2021/10, 企業評選/評審委員 (久鐵工業有限公司, 台中/神岡區)
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  187. MDPI system/ Crystals 特刊(Optoelectronics and Photonics in Crystals), 2022/2-2023/05, 客座編輯委員 ((SCI, IF2020: 2.589) Guest editor)
  188. MDPI system/ Micromachines, 2022/02, 論文審核委員
  189. 中科院/國防部軍備局 112年度功率電子射頻產業應用發展計畫 (1/4), 2022/03, 計畫審核委員
  190. MDPI system/ Sensors, 2022/03, 論文審核委員
  191. MDPI system/ Micromachines, 2022/04, 論文審核委員
  192. MDPI system/ Micromachines, 2022/05, 論文審核委員
  193. MDPI system/ Sensors, 2022/05, 論文審核委員
  194. MDPI system/ Sensors, 2022/06, 論文審核委員
  195. MDPI system/ Materials, 2022/06, 論文審核委員
  196. MDPI system/ Materials, 2022/07, 論文審核委員
  197. MDPI system/ Micromachines, 2022/07, 論文審核委員
  198. MDPI system/ Sensors, 2022/07, 論文審核委員
  199. Elsevier/ Microelectronics Reliability, 2022/07, 論文審核委員
  200. 中科院/國防部 111年度功率電子關鍵技術提升與通訊/綠能產業整合應用開發(4/4)”, 2022/08, 期中執行報告 計畫審核委員
  201. Elsevier/ Journal of Materials Research and Technology, 2022/8/2, 論文審核委員 (SCI IF2021: 6.09)
  202. Elsevier/ Journal of Materials Research and Technology, 2022/8/4, 第二篇論文審核委員 (SCI IF2021: 6.09)
  203. MDPI system/ Mathematics, 2022/08, 論文審核委員 (SCI IF2021: 2.592)
  204. Elsevier/ Journal of Materials Research and Technology, 2022/8/16, 第三篇論文審核委員 (SCI IF2021: 6.09)
  205. MDPI system/ Micromachines, 2022/08, 論文審核委員
  206. 中科院/國防部 111年度功率電子關鍵技術提升與通訊/綠能產業整合應用開發(4/4)”, 2022/09,期中查證審查委員
  207. Elsevier/ Microelectronics Journal, 2022/09/07, 論文審核委員
  208. MDPI system/ Chips, 2022/09/13, 論文審核委員
  209. Elsevier/ Journal of Materials Research and Technology, 2022/9/13論文審核委員
  210. Elsevier/ Applied Surface Science, 2022/9/27, 論文審核委員
  211. MDPI system/ Sensors, 2022/10/01, 論文審核委員
  212. MDPI system/ Electronics, 2022/10/17, 論文審核委員
  213. MDPI system/ Mathematics, 2022/11/1, 論文審核委員 (SCI IF2021: 2.592)
  214. 國防部/ 112年國防先進科技研究計畫-新增案」計畫書書面審查, 2022/11, 計畫審核委員
  215. Elsevier/ Journal of Materials Research and Technology, 2022/11/14, 審核委員 (SCI IF2021: 6.09)
  216. MDPI system/ Nanomaterials, 2022/11/17, 論文審核委員
  217. MDPI system/ Coatings, 2022/12/17, 論文審核委員
  218. 中科院/國防部 111年度功率電子關鍵技術提升與通訊/綠能產業整合應用開發(4/4)”, 2022/12, 期末執行報告 計畫審核委員
  219. Elsevier/ Journal of Materials Research and Technology, 2022/12/06, 審核委員 (SCI IF2021: 6.09)
  220. 中科院執行國防部科技專案計畫「功率電子射頻產業應用發展計畫(1/4)計畫」2022/12/13, 書面計畫審核委員
  221. MDPI system/ Sensors, 2022/12/14, 論文審核委員
  222. 中科院執行國防部科技專案計畫「功率電子射頻產業應用發展計畫(1/4)計畫」2023/01/18, 細部計畫審核委員
  223. MDPI system/ Algorithms, 2023/01, 論文審核委員 (Emerging Sources Citation Index (ESCI) in JCR)
  224. MDPI system/ Electronics, 2023/02/04, 論文審核委員
  225. MDPI system/ Bioengineering, 2023/02/17, 論文審核委員(SCI IF2022: 6.832)
  226. MDPI system/ Sensors, 2023/02/28, 論文審核委員
  227. OJS system/ J. Electr. Electron. Eng. (JEEE), 2023/03/01, 論文審核委員
  228. 中科院執行國防部科技專案計畫「功率電子射頻產業應用發展計畫(2/4)2023/03/07, 書面審核委員
  229. MDPI system/ Nanomaterials, 2023/03/11, 論文審核委員
  230. MDPI system/ Sensors, 2023/03/23, 論文審核委員
  231. Sensors and Materials特刊(Materials, Devices, Circuits, and Analytical Methods for Various Sensors) 2023/03~ 2024/04客座編輯(SCI IF2021: 0.879)
  232. MDPI system/ Electronics, 2023/04/07, 論文審核委員
  233. MDPI system/ Micromachines, 2023/04/12, 論文審核委員
  234. MDPI system/ Sensors, 2023/04/25, 論文審核委員
  235. EnPress Publisher/ Characterization and Application of Nanomaterials, 2023/04/26, 論文審核委員
  236. MDPI system/ Fibers, 2023/05/10, 論文審核委員
  237. EnPress Publisher/ Characterization and Application of Nanomaterials, 2023/05/09, 論文審核委員
  238. MDPI system/ Electronics, 2023/06/15, 論文審核委員
  239. MDPI system/ Computers, 2023/06/26, 論文審核委員
  240. IEEE system/ Journal of the Electron Devices Society, 2023/07/17, 論文審核委員
  241. MDPI system/ Energies, 2023/07/20, 論文審核委員
  242. 2023 International Conference on Material Engineering and Advanced Manufacturing Technology (MEAMT 2023), 2023/07, 論文審核委員
  243. MDPI system/ Membranes, 2023/08/02, 論文審核委員
  244. MDPI system/ Sensors, 2023/08/10, 論文審核委員
  245. MDPI system/ Chips, 2023/08/15, 論文審核委員
  246. 中科院執行國防部軍備局112年度「功率電子射頻產業應用發展(1/4)計畫」2023/08/25, 期中查證審查委員
  247. MDPI system/ Energies, 2023/08/26, 論文審核委員
  248. MDPI system/ Biomimetics, 2023/09/07, 論文審核委員 (SCI IF2022:4.5)
  249. SpringerNature/ Silicon, 2023/09/14, 論文審核委員
  250. Elsevier/ Journal of Materials Research and Technology, 2023/10/02, 審核委員
  251. MDPI system/ Sensors, 2023/10/10, 論文審核委員
  252. MDPI system/ Electronics, 2023/10/26, 論文審核委員
  253. Elsevier/ Journal of Materials Research and Technology, 2023/11/06, 審核委員

 

(61種國際期刊 論文審核委員(包括 45 SCI 期刊); 24種國際會議研討會 論文審核委員; 9種國際期刊 客座編輯委員( 7 SCI 期刊))

 

【學術研討會Session Chairman & Committee

  1. 2009/ 2004 岸三地無線電研討會 (Cross Strait Tri-regional Radio Science and Wireless Technology Conference, CSTRWC), session chair, Tianjin, China
  2. 2009/ 兩岸三地無線電研討會, 優秀論文評審委員
  3. 2004/ 2006/ 2008銘傳國際學術會議, session chair
  4. 2008 International Electron Devices and Materials Symposia (IEDMS), (Technical Program of Committee), Taichung, Taiwan
  5. 2008 International Electron Devices and Materials Symposia, IEDMS 2008/ Session A擔任session chair and Oral Best Paper評審委員
  6. 2009 The sixth Asia-Pacific International Symposium on the Basic and Application of Plasma Technology (APSPT-6), Session A2 (session chair), Hsinchu, Taiwan
  7. 4th IEEE International NanoElectronics Conference (INEC2011), Session G5 (session chair), Taoyuan, Taiwan
  8. 2011萬能科技大學第六屆電資科技應用學術論文發表研討會, session chair
  9. 2012 International Conference on Commercialization of Transducer & MEMS, 2012/9, session chair and invited speaker (Suzhou, China).
  10. 8th Asia-Pacific International Symposium on the Basics and Applications of Plasma Technology (APSPT-8, 2013/12), Session 18 (session chair) and Poster Award Competition, Hsinchu, Taiwan
  11. 8th Asia-Pacific International Symposium on the Basics and Applications of Plasma Technology (APSPT-8, 2013/12) (Local Committee)
  12. 3rd IEEE International Symposium on Next-Generation Electronics (ISNE2014), Session YA2 (session chair), Taoyuan, Taiwan.
  13. 2014 International Electron Devices and Materials Symposia, IEDMS 2014, Session FET I (session chair), Hualien, Taiwan.
  14. The International Conference on Mechatronics and Manufacturing Technologies [MMT2016], Wuhan, China (Technical Program of Committee). 2016/8.
  15. 2016 International Electron Devices and Materials Symposia [IEDMS 2016], (Technical Program of Committee). 2016/11, Taipei, Taiwan.
  16. 2016 International Electron Devices and Materials Symposia [IEDMS 2016], Session B2 (session chair), 2016/11, Taipei, Taiwan.
  17. 2016 International Conference on Computer, Networks and Communication Technology [CNCT2016], (Technical Program of Committee), 2016/12, Xiamen, China
  18. 2016 International Conference on Economics, Management and Social Development [EMSD 2016], (Technical Program of Committee), 2016/12, Zhangjiajie, China
  19. 3rd International Conference on Wireless Communication and Sensor Network [WCSN 2016], (Technical Program of Committee), 2016/12, Wuhan, China
  20. 2017 International Conference on Advanced Material Science and Engineering-- AMSE2017, (Technical Program of Committee), 2017/2, Shenzhen, China
  21. Mechanical Engineering and Materials -- MEM2017, (Technical Program of Committee), 2017/ 6, Xiamen, China
  22. International Conference on Electronic Industry and Automation-- EIA2017, (Technical Program of Committee), 2017/6, Suzhou, China
  23. International Conference on Cloud Technology and Communication Engineering-- CTCE2017, (Technical Program of Committee), 2017/8, Guilin, China
  24. 3rd Annual International Conference on Advanced Material Engineering-- AME2017, (Technical Program of Committee and co-editor), 2017/4, Shanghai, China
  25. 3rd Annual International Conference on Electronics, Electrical Engineering and Information Science-- EEEIS2017, (Technical Program of Committee), 2017/09, Guangzhou, Guangdong, China
  26. 4th annual International Conference on Information Technology and Applications-- ITA 2017, (Technical Program of Committee), 2017/05, Guangzhou, Guangdong, China
  27. 4th annual 2017 International Conference on Design, Manufacturing and Mechatronics-- (ICDMM2017), (Technical Program of Committee), 2017/5, Guangzhou, Guangdong, Chin
  28. 2017 International Conference on Wireless Communications, Networking and Applications— (WCNA 2017), (Technical Program of Committee, keynote speaker, and Chair), 2017/10, Shenzhen, China.
  29. 2017 International Conference on Material Engineering and Advanced Manufacturing Technology (MEAMT 2017), (Technical Program of Committee and Program Chair), 2017/8, Busan, Korea [organized by IASED (International Academy of Science and Engineering for Development, www.iased.net)]
  30. 3rd Annual 2017 International Workshop on Material Science and Engineering --- (IWMSE 2017), (Technical Program of Committee), 2017/9, Guangzhou, Guangdong, China.
  31. 2018 International Conference on Material Engineering and Advanced Manufacturing Technology (MEAMT 2018), (Technical Program of Committee and Program Chair), 2018/5, Beijing, China.
  32. International Conference on Earth Observations and Societal Impacts, 2018 (ICEO&SI 2018), July 2018 (Session C-5, session chair)
  33. 2018 the 2nd annual conference on Cloud Technology and Communication Engineering (CTCE2018), (Technical Program of Committee), 2018/08, Nanjing, China.
  34. 5th International Conference on Wireless Communication and Sensor Network (WCSN 2018), (Technical Program of Committee and Editor), 2018/12, Wuhan, China.
  35. 2018 2nd International Workshop on Materials Science and Mechanical Engineering (2nd IWMSME2018), (Technical Program of Committee), 2018/10, Qingdao, Shandong Province, China.
  36. 2019 International Conference on Material Engineering and Advanced Manufacturing Technology (MEAMT 2019), (Technical Program of Committee and Program Chair), Shanghai, China on 26-28 April, 2019.
  37. 2019 International Conference on Material Engineering and Advanced Manufacturing Technology (MEAMT 2019), (Co-editor), Shanghai, China on 26-28 April, 2019.
  38. 2nd Annual International Conference on Control, Automation and Electrical Systems (ICCAES2019), 2019/04, Wuhan, China. (Technical Program of Committee)
  39. 7th Annual International Conference on Material Science and Engineering (ICMSE2019) April 19-20, 2019 / Wuhan, Hubei, China. (Technical Program of Committee)
  40. IEEE/ 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2019)- Hangzhou, China, July 02-05, 2019 (Invited speaker).
  41. IEEE/ 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2019)- Hangzhou, China, July 02-05, 2019 (Best paper reviewer).
  42. International Congress on Advanced Materials Sciences and Engineering (ICAMSE-2019) - Osaka, Japan, July 22-24, 2019 (Invited speaker, session 8: Nano materials)
  43. International Congress on Advanced Materials Sciences and Engineering (ICAMSE-2019) - Osaka, Japan, July 22-24, 2019 (session chair, session 8: Nano materials)
  44. The 8th IEEE International Symposium on Next-Generation Electronics (ISNE 2019)- Zhengzhou, China, Oct.9-10, 2019 (Invited speaker)
  45. The 8th IEEE International Symposium on Next-Generation Electronics (ISNE 2019)- Zhengzhou, China, Oct.9-10, 2019 (Technical Program of Committee)
  46. The 8th IEEE International Symposium on Next-Generation Electronics (ISNE 2019)- Zhengzhou, China, Oct.9-10, 2019 (Session chair: Session 7 Semiconductor Technology)
  47. 2019年度「台灣精密工程科技研討會Taiwan Precision Technology Workshop, TPTW2019), Nov. 28, 2019 (竹北 喜來登飯店) Session chair
  48. 2020 International Conference on Material Engineering and Advanced Manufacturing Technology (MEAMT 2020), (Program Chair), 20-22 July, 2020, Seoul, Korea.
  49. 2020 7th International Conference on Manufacturing and Industrial Technologies (ICMIT 2020), July 22-24, 2020, Rome, Italy (Technical Program of Committee)
  50. IEEE/ The 2nd International Conference on Circuits and Systems (ICCS2020), October 16-19, 2020, Chengdu, China (Technical Program of Committee)
  51. 2020 International Conference on Material Engineering and Advanced Manufacturing Technology (MEAMT 2020), (On-line session Chair), 20-22 July, 2020, Seoul, Korea.
  52. 2021 8th International Conference on Manufacturing and Industrial Technologies (ICMIT 2021), July 26-28, 2021, Lisbon, Portugal (Technical Program of Committee)
  53. 2021 9th Annual International Conference on Material Science and Engineering (ICMSE 2021), July 23-25, 2021, Guiyang, Guizhou, China (Technical Program of Committee)
  54. 2021 5th International Conference on Material Engineering and Advanced Manufacturing Technology (MEAMT 2021), (Technical Committee Chair), Oct. 15-17, 2021, Singapore.
  55. Materials Science Forum, (Scientific Committee Chair for MEAMT2020 proceedings), Jan. 2021.
  56. 2021 2nd International conference on Industrial Engineering and Artificial Intelligence (IEAI 2021), Apr. 2-4, 2021, Osaka, Japan (Technical Program of Committee)
  57. 9th IEEE International Symposium on Next-Generation Electronics (ISNE 2021), July 10-12, 2021, Changsha, China (On-line invited speaker)
  58. 8th Annual International Conference on Information Technology and Applications (ITA2021), Sept. 17-19, Xiamen, Fujian, China (Technical Program of Committee)
  59. 2022 3rd International conference on Industrial Engineering and Artificial Intelligence (IEAI 2022), Apr. 28-30, 2022, Chiang Mai, Thailand (Technical Program of Committee)
  60. 2021 明新科技大學 工程科技技術應用研討會 Dec. 17, 2021 (新竹 明新科大) Session chair
  61. 2022 International Conference on Science, Education, and Viable Engineering (IEEE IC7), June. 23-26, 2022, Yilan, Taiwan (Session chair)
  62. 2022 明新科技大學 工程科技技術應用研討會 Dec. 02, 2022 (新竹 明新科大) Session chair
  63. 2023 7th International Conference on Material Engineering and Advanced Manufacturing Technology (MEAMT 2023), (Technical Committee Chair), Aug. 25-27, 2023, Taizhou, China.
  64. 2023 7th International Conference on Material Engineering and Advanced Manufacturing Technology (MEAMT 2023), (Technical Committee), Aug. 25-27, 2023, Taizhou, China.
  65. 2023 11th IEEE & 12th ICSEVEN, (Technical Program Committee), Osaka, Japan on Apr. 12-16, 2023.
  66. 2023 International Conference on Smart Materials and Surfaces (ICoSMS 2023), (Program Chair), July 21-23, 2023, Taizhou, China.
  67. 2023 12th IEEE & 13th ICSEVEN, (Technical Program Committee), Bangkok, Thailand on Nov. 8-12, 2023.
  68. 2023 12th IEEE & 13th ICSEVEN, Bangkok, Thailand on Nov. 8-12, 2023. (Session chair)
  69. 2023 明新科技大學 工程科技技術應用研討會 Dec. 01, 2023 (新竹 明新科大) Session chair

 

(23 session chairs; 4 program chairs & 2 Technical Committee Chair; 34 TPCs; 3 Editor or co-editor; 5 invited speakers)

 

【教學績效】

  1. 明新科技大學最近幾年學生教學評量: 總平均 大於 4.2 (5 分為滿分).
  2. 台北科技大學,授課期間學生教學評量: 總平均 大於 4.5 (5 分為滿分).
  3. 國立交通大學人才培育中心2007/9-10學員意見調查: 總平均 4.5 (5 分為滿分).
  4. 明新科大主辦暨教育部為指導單位,全國「RFID設計與應用競賽」,職所帶領之團隊分別以「設計S型天線應用在2.4GHz RFID收發器」與「5.2GHz單級疊接式超低雜訊放大器應用於無線辨識系統」於設計競賽組,獲得第二名與第三名之佳績,2008/12/20.
  5. 明新科技大學電子研究所,「Device Measurement and Reliability Analysis」全英文式授課,2007秋季與2008秋季.
  6. 明新科技大學電子研究所,「Principles of Flat Panel Display」全英文式授課,2009春季.
  7. 明新科技大學電子研究所,「Semiconductor Device Physics」全英文式授課,2009秋季.
  8. 2009岸三地無線電研討會 (CSTRWC09) (於天津大學) 兩篇論文「First-Stage Cascode Ultra-Low-Noise Amplifier with 0.18um CMOS Process for 2.4GHz RFID Applications」與「A High Power-added Efficiency of Power Amplifier for 2.4GHz RFID Applications Embedded with 0.18um CMOS Process」榮獲優秀論文獎
  9. 2009 IEEE/IMPACT Analysis of Promising Copper Wire Bonding in Assembly Consideration」入圍「最佳學生論文獎」候選名單6篇中之一.
  10. 2010 共同指導的北科大機電所博士班 謝禎穎 博士畢業,四年期間論文發表 超過102.
  11. 明新科技大學電子研究所,「IC Measurement and Reliability Analysis」全英文式授課,2010春季.
  12. 台北科技大學機電整合研究所,「Nano-silicon Physics」全英文式授課,2010春季.
  13. 台北科技大學機電整合研究所,「Nano-silicon Physics」全英文式授課,2011春季.
  14. 台北科技大學機電整合研究所,「Nano-silicon Physics」全英文式授課,2012春季.
  15. 2011 電子系二技彭敏茹、何耀元、羅伊呈、彭沂昕專題指導,論文發表 每個人皆有5篇或以上論文(包括每個人皆有 1IEEE 論文).
  16. 2011 電子系二技 研究所甄試: 彭敏茹(台北科大/機電所)、何耀元(元智大學/光電所)、羅伊呈(長庚大學/電子所).
  17. 2011 明新科大/日電子研究所 楊人澔,論文發表 20 ( 2 EI paper, 5 IEEE conference, 3 APICOR, 1 IEDMS, 9 國內研討會論文) ,並獲得2011年明新科大「畢業傑出成就獎」.
  18. 台北科技大學機電整合研究所,「CMOS Device measurement and Reliability Engineering」全英文式授課,2013春季.
  19. 2013 明新科大/日電子研究所 杜重寬、吳國維、張敬宗與彭思豪,論文發表皆超過 10 ,並獲得2013年明新科大/電子所「畢業傑出研究獎」;王志玄 論文發表 3 (2IEEE/NMDC2013 1APWS2013) ,獲得2013年明新科大/電子所「畢業優秀研究獎」.
  20. 台北科技大學機電整合研究所,「CMOS Device measurement and Reliability Engineering」全英文式授課,2014春季.
  21. 2014 明新科大/日電子研究所 楊捷閩、李朝旺、與連俊瑋,論文發表皆超過 10 ,並獲得2014年明新科大/電子所「畢業傑出研究獎」.
  22. 2015 明新科大/日電子研究所 林建良 論文發表 5篇與賴益得 論文發表 3. 電子所「畢業傑出研究獎」
  23. 2016年明新科大/日電子研究所 田振威 王昱崴 論文發表各 8篇電子所「畢業傑出研究獎」
  24. 2016 明新科大/ 大學部 游一宏: 論文發表 8. 電子所「畢業傑出研究獎」
  25. 2017年明新科大/日電子研究所 饒子揚 論文發表15 電子所「畢業傑出研究獎」
  26. 2017電子,信號,與通訊創新科技研討會: 黃文敭、張耀文、趙廷唯、王木俊, “溫度調變下不同p通道鰭式電晶體之DIBL變化”, 國立高雄應用科技大學, 高雄, 5 2017. (優秀論文獎)
  27. 2018年明新科大/日電子研究所 趙廷唯 論文發表11
  28. 2020年明新科大/日電子研究所 陳建銘 論文發表12
  29. 2021/03 清大自強基金會授課,學生教學評量: 總平均 92 (100 分為滿分).
  30. 2021秋季 明新科大/ 電子日國際專班三甲與電子日國際專班三乙班 (兩班, 課名: 積體電路工程以全英文授課
  31. 2022春季 明新科大/ 電子三甲(一班, 課名: 半導體製程技術以全英文授課
  32. 2023春季 明新科大/ 電子研究所一甲(一班, 課名: 積體電路量測與可靠性分析以全英文授課

 

得獎或特殊事項

  1. 明新科大主辦暨教育部為指導單位,全國「RFID設計與應用競賽」,職所帶領之團隊分別以「設計S型天線應用在2.4GHz RFID收發器」與「5.2GHz單級疊接式超低雜訊放大器應用於無線辨識系統」於設計競賽組,獲得第二名與第三名之佳績,2008/12/20.
  2. 2009岸三地無線電研討會 (CSTRWC09) (於天津大學) 兩篇論文「First-Stage Cascode Ultra-Low-Noise Amplifier with 0.18m CMOS Process for 2.4GHz RFID Applications」與「A High Power-added Efficiency of Power Amplifier for 2.4GHz RFID Applications Embedded with 0.18 m CMOS Process」榮獲優秀論文獎
  3. 2009 IEEE/IMPACT Analysis of Promising Copper Wire Bonding in Assembly Consideration」入圍「最佳學生論文獎」候選名單6篇中之一
  4. 2010 (98學年度) 榮獲 明新科技大學/教學績優教師.
  5. 2011榮獲中華民國私立教育事業協會/ 模範教師獎 (100)教協安字第100024
  6. 2011謝禎穎 榮獲明新科技大學/ 100 學年度「熱心優良校友」
  7. 2011 榮獲工業技術研究院 績優教師
  8. 2012 義守大學/ 電子工程技術研討會_優秀論文 (0.18微米製程5.2/5.8GHz高增益與絕佳隔離之疊接式低雜訊放大器應用於射頻鑑別系統)
  9. 國立臺灣科技大學所舉辦之101年度『半導體及光電設備領域』優良教材競賽 獲得特優獎 (作品:光電平面顯示器概論)
  10. 2012榮獲中華民國私立教育事業協會/ 模範教師獎 (101)教協安字第101071
  11. Keynote speaker: 2012 International Conference on Commercialization of Transducer & MEMS, 2012/9. (Suzhou, China)
  12. 2014 (102學年度) 榮獲 明新科技大學/教學績優教師.
  13. 2015 榮獲工業技術研究院 績優教師
  14. 2015榮獲中華民國私立教育事業協會/ 模範教師獎 (104)教協安字第1040000125
  15. 2016 榮獲明新科技大學/工學院 專題比賽 論文組 第一名 (大學部 學生: 游一宏)
  16. 2016 International Conference on Innovation, Communication and Engineering (ICICE 2016)/ Best conference paper award.
  17. 2017電子,信號,與通訊創新科技研討會/國立高雄應用科技大學_優秀論文 (溫度調變下不同p通道鰭式電晶體之DIBL變化)
  18. 2017/8 榮獲工業局/智慧電子學院 績優教師
  19. MEAMT2017 國際研討會 (2017/9 釜山/ 韓國最佳論文審核委員獎
  20. WCNA2017國際研討會 (2017/10 中國/深圳) 大會主席 (2017/10/09 會議取消)
  21. 2018 (106學年度) 榮獲 明新科技大學/教學績優教師.
  22. MEAMT2018 最佳論文審核委員獎 (2018/5 北京/ 中國)
  23. Quarterly Franklin Membership (Membership ID#NF67107), Date: 2018/10/09, London Journals Press.
  24. 2019/4 榮獲工業局/智慧電子學院 績優教師
  25. MEAMT2019 最佳論文審核委員獎 (2019/5 上海/ 中國)
  26. 2020/12 (109學年度) 榮獲 明新科技大學/教學績優教師. (第四次得獎)
  27. 2021/09 榮獲 明新科技大學/ 特殊優秀人才彈性薪資 教師 (2次獲獎)
  28. 2022/03 榮獲 2022第十八屆全國電子設計創意競賽暨學術研討會 最佳論文獎
  29. 2022/06 榮獲 2022 9th IEEE ICSEVEN 國際研討會 最佳學者獎
  30. 2022/09 榮獲 明新科技大學/ 特殊優秀人才彈性薪資 教師
  31. 2023/01 (111學年度) 榮獲 明新科技大學/教學績優教師. (第五次得獎)
  32. 2023/01 榮獲 10th IEEE & 11th ICSEVEN  口頭最佳論文獎
  33. 2023/01 榮獲 10th IEEE & 11th ICSEVEN  學術貢獻獎
  34. 2023/04 榮獲 3rd IEEE ICEIB2023 最佳論文獎
  35. 2023/11 榮獲 12th IEEE & 13th ICSEVEN  海報組最佳論文獎
  36. 2023/11 榮獲 12th IEEE & 13th ICSEVEN  學術成就獎
  37. 2023/11 榮獲 明新科技大學/ 特殊優秀人才彈性薪資 教師 (3次獲獎)

 

產學合作與研究計畫

  1. 科準科技公司,「0.175微米DRAM晶片捐贈」,捐贈金額US$143,4452006/2.
  2. 國科會計畫NSC 96-2221-E-159-017,「在奈米製程下,銅金屬導線之電子遷移與肌膚效應結合後,在射頻頻率範圍操作中,共伴效應之研究」,計畫經費: NT$ 560,0002007/8~ 2008/7.
  3. 台大RF ID教育暨研發實驗中心,「教育部RFID 科技及應用人才培育先導型計畫--- RF IC Design」,計畫經費: NT$ 480,7502008/4~ 2009/3.
  4. 明新科大,「校內專題計劃:0.18um矽基材 CMOS 射頻積體電路中功率放大器之散熱路徑模擬」,計畫: MUST-95-電子-01,經費: NT$ 40,0002006/1~ 2006/9.
  5. 清華大學/工程與系統科學系,「腦科學光纖感測與給藥系統」,2003/4~ 2008/8.
  6. 交通大學/材料工程與科學系,「綠光雷射退火下Panel電晶體之元件特性探討與可靠性量測」,2008/1~ 2009/12.
  7. 明新科大,「校內專題計劃: 綠光雷射退火後之多晶矽薄膜電晶體特性與可靠性研究」,計畫: MUST-98電子-9,經費: NT$ 36,0002009/1~ 2009/9. (共同主持人)
  8. 北科大機電整合研究所,「奈米矽元件研發中心」成員之一.
  9. 工業技術研究院,「新型USB充電器電路之開發及控制」,()99050,合作金額NT$199,0002010/5~ 2010/11. (共同主持人; 主持人:黃東正)
  10. 雷剛科技公司,「RFID中低雜訊放大器之最佳化佈局研究」,()99065,合作金額NT$100,0002010/10~ 2011/6.
  11. 泓廣科技公司,「高耐壓高電流場效電晶體之研究及電性分析」,()100007,合作金額NT$100,0002011/1~ 12. (共同主持人; 主持人:楊信佳)
  12. 明新科大,「校內專題計劃: N型多晶矽薄膜電晶體在綠光雷射退火與活化後之C-V特性與可靠性研究」,計畫: MUST-100-電子-5,經費: NT$ 50,0002011/1~ 2011/9.
  13. 明新科大,「校內專題計劃: 接觸蝕刻截止層厚度應變對奈米等級矽電晶體之電特性與可靠性研究」,計畫: MUST-101-電子-1,經費: NT$ 33,0002012/1~ 2012/9. (共同主持人)
  14. 明新科大,「校內專題計劃: 45 奈米等級矽應變與矽鍺通道元件之電特性與可靠度研究」,計畫: MUST-101-電子-2,經費: NT$ 33,0002012/1~ 2012/9.
  15. 泓廣科技公司,「功率積體電路之研究及電路分析」,()1010012,合作金額NT$60,0002012/1~ 9.
  16. 明新科大,「校內專題計劃: 藉由TCAD模擬軟體輔助以探究奈米等級接觸蝕刻停止層應力於應變矽電晶體之通道電場分佈」,計畫: MUST-102電子-1,經費: NT$ 56,0002013/1~ 2013/9.
  17. 明新科大,「校內專題計劃: 28奈米氧化鉿/氧化鋯/氧化鉿閘極介電物質使用去耦合氮化電漿製程後之元件熱載子可靠性研究」,計畫: MUST-103電子-3,經費