| 2023 |
A Model for the Frequency Dispersion of p-type Si/Ga2O3 Capacitance and Conductance in Accumulation |
| 2023 |
Voltage Gain of 28nm-node Various Channel-width pMOSFETs under Thermal Annealing Treatments of DPN Processes |
| 2023 |
Gain Performance of Nano-node Channel-width nMOSFETs Treated by DPN Processes with Various Nitrogen Concentrations |
| 2023 |
Gain Efficiency of 28 nm-node Various Channel-width pMOSFETs under Nitrogen Concentration of DPN Treatment |
| 2023 |
Amplification Gain of Nano-node Channel-width nMOSFETs with Thermal Annealing Treatments of DPN Processes |
| 2023 |
Dit Extraction of Nano-node HK/MG nMOSFETs Treated with DPN Process under Diverse Nitrogen Concentration |
| 2023 |
Degradation Study of RhB with Ag3PO4-Na2SiO3 under Visible Light |
| 2023 |
Substrate Bias Effect of 28 nm-node HK/MG nMOSFETs with DPN Temperature Treatments |
| 2023 |
Back-bias Effect of Nano-node HK/MG nMOSFETs under Different Nitrogen Concentration of DPN Process Treatment |
| 2023 |
C-V Characteristics of Nano-node HK/MG nMOSFETs with LDD and SDE implantation |
| 2023 |
Study of Enlarged Field Enhancement Factor for Carbon Nanotubes on Millimeter Scaled Platform |
| 2023 |
不同氮濃度DPN製程處理下28 nm節點I/O HK/MG nMOSFETs之基底偏壓效應 |
| 2023 |
28 nm節點I/O HK/MG nMOSFETs在不同溫度DPN製程處理下之基底偏壓效應 |
| 2023 |
基底偏壓效應探究28 nm節點I/O HK/MG nMOSFETs在不同退火溫度和氮濃度DPN製程處理下之電特性 |
| 2022 |
奈米製程之DIBL效應量測技術探討 |
| 2022 |
奈米等級nMOSFETs與nFinFETs之DIBL效應比較與探討 |
| 2022 |
奈米nMOSFET中閘極電場對通道等效遷移率之影響 |
| 2022 |
Reduction Study of MB with Ag3PO4/Na2SiO3 |
| 2022 |
Electrical Characteristics of 28nm-node Small p-channel MOSFETs with High-k/Metal Gate Processes |
| 2022 |
Electrical Performance of 28nm-node Long/Short Channel-width nMOSFETs under DPN Nitridation Treatment |
| 2022 |
λ-factor of Nano-node HK/MG nMOSFETs with DPN Different Annealing Temperatures |
| 2022 |
奈米HK/MG nMOSFET元件在不同氮化退火溫度與高/低汲極電場下之通道調變效應 |
| 2021 |
Anneal Effect of Bi2MoO6/SnOx:N to the Degradation of RhB under Visible Light Irradiation |
| 2021 |
以轉導觀點探究3D nMESFET與 III-V 3D nMOSFET之優劣 |
| 2021 |
奈米SOI n-型鰭式電晶體在閘極電場偏壓下之爾利效應修正 |
| 2021 |
Channel Surface Integrity with 2.4nm High-k Gate Dielectric under DPN Treatment at Different Annealing Temperatures |
| 2021 |
28奈米HK/MG製程在不同氮化退火溫度下I/O nMOSFET閘極氧化層品質均勻性分析 |
| 2020 |
Integrity of N-type Channel Surface for Nano-node High-k Gate Dielectric |
| 2020 |
ON/OFF Current of Nano-node Field-Effect Transistors on p-substrate or SOI Substrate |
| 2020 |
Junction Integrity for 28nm High-k nMOSFETs with Thermal Stress |
| 2020 |
Q-factor Investigating Integrity of 28nm-node High-k Gate Dielectric |
| 2020 |
Test Patterns Exposing Integrity of 28nm-node High-k Gate Dielectric on p-substrate with Nitridation Treatments |
| 2020 |
Integrity of Fringe Gate Leakage for 28nm HK/MG nMOSFETs with Nitridation Treatments |
| 2020 |
Leakage of High-k Gate Dielectric of nMOSFETs with DPN Treatment under Various Nitrogen Concentrations |
| 2020 |
Effect of Bismuth Content in Precursor on the Structural and Optical Properties of Bismuth Molybdenum Oxide Film Prepared by Spray Pyrolysis |
| 2020 |
Electrical Characterization of Si/ZnO:Er,Yb Diode on NH4F/AgNO3 Aqueous Solution Processed Si Substrate |
| 2020 |
Silane-free procedure for SiO2 layer formation at room temperature |
| 2019 |
Nano-node n-type Gate Dielectric Integrity and Uniformity Correlated to Nitridation Process |
| 2019 |
Uniformity of Gate Dielectric for Core HK/MG pMOSFET with Nitridation Treatments |
| 2019 |
Gate Dielectric Distribution of I/O HK/MG pMOSFET with Nitridation Treatments |
| 2019 |
Electrical Study of Er and N codoped Zinc Oxide Diode |
| 2019 |
Study of State Energies in InAs/GaSb Superlattice with InSb Interlayer |
| 2019 |
Photoluminescence Study of Er doped Zinc Oxide Prepared by Spray Pyrolysis with Zinc Formate Precursor |
| 2019 |
Punch-through and DIBL Effects Exposing Nano-node SOI FinFETs under Heat Stress |
| 2019 |
Comparison of Degradation and Recovery of SiONx and Hf-based Dielectric under Electrical-field Stress |
| 2018 |
Conductivity Study of Er doped Zinc Oxide by Spray Pyrolysis with Zinc Formate Precursor |
| 2018 |
Thickness Study of Er-doped Magnesium Zinc Oxide Diode |
| 2018 |
Abnormal Characteristics of Drive Current for n-type FinFETs under Normal Operation Field |
| 2018 |
DIBL Effect for Nano-node p-type FinFETs under Thermal Stress |
| 2018 |
Punch-through Effect for Nano-node n-type FinFETs under Thermal Stress and Vt Implant Energy |
| 2018 |
Anneal effect of Er doped zinc oxide by spray pyrolysis |
| 2018 |
Observation of Degradation and Recovery of Stacked HfOx/ZrOy/HfOx MOSFETs |
| 2018 |
Off-state Current Behaviors of 28nm-node nMOSFETs under Negative Gate Bias |
| 2018 |
The μeq Fitting for Mixed Current Model of MOSFETs Considering Horizontal Electric Field |
| 2018 |
Electrical Characteristics of WO3/Ag/WO3 Sandwich Structure Fabricated with Magnetic-control Sputtering Metrology |
| 2018 |
Drive Current Behaviors of Multi N-channel FinFETs under Different VT Implant Energies |
| 2018 |
GIDL Effect Observed in FinFET Shapes and VT Implant Energy |
| 2018 |
Off-state Drain Current Characteristics of p-type Multi-channel FinFETs Impacted with Different Vt Implantation Energy |
| 2018 |
A Prototype of Mini-wireless Remote Monitoring Control System Applied to Delicate Agriculture |
| 2017 |
DIBL Effect Gauging the Integrity of Nano-node n-channel FinFETs |
| 2017 |
VT Implant Energy Impacting DIBL and Punch‐through Effects of Nano‐node n‐channel FinFETs on SOI Wafers |
| 2017 |
Decoupled Tunneling and GIDL Effects for 28nm High‐k Stacked nMOSFETs |
| 2017 |
Deposition Temperature Study of Nitrogen‐doped Zinc Oxide by Spray Pyrolysis |
| 2017 |
Electrical Stress Probing Recovery Efficiency of 28nm HK/MG nMOSFETs under Different Nitrogen Concentration in Nitridation |
| 2017 |
Voltage Stress Exposing Degradation Rate of 28nm HK/MG nMOSFETs under Different Nitridation Annealing Temperatures |
| 2017 |
Isolation Integrity of Drain/Gate Contact Exposed with Source/Drain Extension Length for SOI p‐channel FinFETs |
| 2017 |
I‐V Model of Nano nMOSFETs Incorporating Drift and Diffusion Current |
| 2017 |
The DIBL Effect of SOI p‐channel FinFETs under Various SDE Lengths |
| 2017 |
GIDL效應驗證微影偏移於奈米SOI n通道FinFETs |
| 2017 |
長源/汲極延伸長度與不同VT離子佈植能量下在SOI n通道FinFETs中之DIBL與次臨界擺幅效應 |
| 2017 |
不同源/汲極延伸長度在SOI n通道FinFETs中之DIBL與貫穿效應 |
| 2017 |
n型奈米鰭式電晶體在汲極加壓後之元件劣化探討 |
| 2017 |
n型奈米鰭式電晶體閘極電流密度分佈探討 |
| 2017 |
溫度調變下不同p通道鰭式電晶體之DIBL變化 |
| 2017 |
n通道鰭式電晶體在溫度不同之汲極引起的能障下降變化 |
| 2017 |
Degradation and Recovery of HfZrO2 Dielectric under Voltage Stress |
| 2017 |
I-V Model for Nano-MOSFETs by Considering Diffusion Current |
| 2017 |
Corner Gate Leakage of n-channel FinFETs under Heating Effect |
| 2017 |
Resistance Study of Er doped Zinc Oxide Diode by Spray Pyrolysis |
| 2017 |
Photocatalytic Study of Calcium Zinc Oxide with Different Calcium Content |
| 2017 |
Plasma Implant Causing DIBL Variation in p-channel FinFETs with Single or Multi-fin Shape on SOI Wafer |
| 2017 |
VT Ion Implant Inducing DIBL Variance in n‐channel FinFETs on SOI Substrate |
| 2016 |
不同n型鰭式電晶體之爾利電壓變化與多根鰭之相依性 |
| 2016 |
不同通道之爾利效應在p型鰭式場效應電晶體 |
| 2016 |
調變微影曝光能量參數對n型奈米鰭式電晶體之電性特性研究 |
| 2016 |
通道寬度調變對奈米多通道n型鰭式電晶體之電特性探究 |
| 2016 |
氮氣流量對非晶氮化鉭應用於擴散阻絕層與擴散係數之影響研究 |
| 2016 |
Photocatalytic Study of Zinc Oxide with Different Bismuth Doping |
| 2016 |
Dark current reduction of n-ZnO/p-Si diode with Boron doped interlayer |
| 2016 |
Thermal Stress Exposing Surface Channel‐length Effect of Nano n-type FinFETs |
| 2016 |
Substrate Current Characteristics for 28 nm HK/MG NMOSFETs under HC Stresses |
| 2016 |
Hot‐Carrier Induced Degradation and Its Recovery in HK/MG NMOSFETs |
| 2016 |
Feasible Programming Methods for 28nm‐node nMOSFETs |
| 2016 |
CLM Effect of Nano p‐channel FinFETs Depending on VT Implant Energies |
| 2016 |
Effective Surface Channel‐length Effect of Nano‐scale n‐channel FinFETs Integrated with VT Doping Energies |
| 2016 |
Middle Gate Bias Exposing CLM Effect of Nano n‐channel FinFETs |
| 2016 |
Heat Stress Impacting Early Effect of Nano p‐channel FinFETs at High Gate Field |
| 2016 |
The Program Mechanism with CHEI/DAHC on Nano HK/MG CMOS Logic Process |
| 2016 |
Nitrogen Flow Rate Relating Diffusion Behaviors of Copper in TaN Layers |
| 2016 |
Performance of TaN as Diffusion Barrier Layer under N2 Flow‐rate Control |
| 2016 |
A New Model Explaining the Saturation Current of Nano‐MOSFETs |
| 2016 |
Early Effect of Nano p‐channel FinFETs Biased at Middle Gate Field |
| 2016 |
Comparison of Nano-node n-channel FinFETs and 28nm HK/MG nMOSFETs |
| 2016 |
Gate Leakage for Nano-node nMOSFETs and n-channel FinFETs |
| 2015 |
Photocatalytic Study of Silver and Bismuth Codoped Zinc Oxide by Spray Pyrolysis |
| 2015 |
Electrical Performance of Dense and Isolated n-type FinFETs in Micro-loading Effect |
| 2015 |
Heating Stress Probing Electrical Performance of Multiple N-channel FinFETs with VT Doping Energies |
| 2015 |
Electrical Characteristics of Multi-gate P-channel FinFETs with VT Implanting Energies under Temperature Stress |
| 2015 |
CIP Metrology Improving the Bump Yield in Photo-lithography Process |
| 2015 |
Reducing the Rework in the Photo-lithography Process of Wafer-bump Assembly with Quality Management |
| 2015 |
Conductivity Study of Magnesium Zinc Oxide with Indium and Nitrogen co-doping by Spray Pyrolysis |
| 2015 |
Visible Light Photocatalytic Study of Zinc Oxide Diode by Spray Pyrolysis |
| 2015 |
Recovery of Hot-carrier Induced Degradation in HK/MG PMOSFETs Treated by Different Nitridation Conditions |
| 2015 |
Simulation to Expose and Control the RSCE Effect for 28nm HK/MG nMOSFETs |
| 2015 |
GCIP Characteristics of High-k Stack NMOSFETs |
| 2015 |
The GCIP effect with High Drain-Bias Stress in 28 nm HK/MG nMOSFETs |
| 2015 |
Multiple Sweeping Drain-Bias Stress in 28 nm HK/MG nMOSFETs |
| 2015 |
Early Effect for n-type FinFETs with Single-fin or Multi-fin Contour |
| 2015 |
A Derivative Metrology to Justify the Punch-Through Effect for n-type FinFETs |
| 2015 |
Fringe-Gate Leakage Mechanisms under Various Source/Drain Extension Spacing for p-type FinFETs |
| 2015 |
Electrical Characteristics of p-type FinFETs with Different Source/Drain Extension Spacing |
| 2014 |
CLM Effect for 28nm Stacked HK NMOSFETs after DPN Treatment with Different Annealing Temperatures |
| 2014 |
GIDL and Gated-Diode Metrologies for28nm HK/MG nMOSFETs in Nitridation Annealing Temperatures |
| 2014 |
Electrical Quality of 28nm HK/MGMOSFETs with PDA and DPN Treatment |
| 2014 |
Comparison of Gate Leakage for SiONx and HfZrOx Gate Dielectrics of MOSFETs with Decoupled Plasma Nitridation Process |
| 2014 |
Early Effect Exposing Performance of 28nm HK/MG pMOSFETs under PDA or DPN Nitridation Treatment |
| 2014 |
Relationship between Stress Distribution and Hot‐Carrier Effect for Strained nMOSFETs |
| 2014 |
Discussion of different Nitrogen Concentrations and Annealing Temperatures on GIDL Current Characteristics of High-k Stack PMOSFETs |
| 2014 |
The Gate Leakage of 28 nm MOSFETs by Different Processes of DPN Treatments |
| 2014 |
Drain Field Exposing Hump Effect for 28nm HK/MG nMOSFETs under Plasma Nitridation Treatments |
| 2014 |
Characteristics and Kink Effect under Temperature Stress for 28nm HK/MG nMOSFETs after Plasma Nitridation Treatments |
| 2014 |
Electrical Performance of n-channel FinFETs with Threshold-voltage Doping Energies under Heating Stress |
| 2014 |
Temperature Stress Probing Performance of p-channel FinFETs under Different VT Implanting Energies |
| 2014 |
Photo Matrix Technology Overcoming the Constraint of Nano-node FinFETs |
| 2014 |
Photocatalytic Study of Bismuth Doped Zinc Oxide Prepared by Spray Pyrolysis:The effect of Annealing |
| 2013 |
Next Promising P-type FinFET Devices without or with Cobalt-Silicide Applied to the Gate |
| 2013 |
Impact of Stress Induced by Stressors on Hot Carrier Reliability of Strained nMOSFETs |
| 2013 |
Characteristics and Hot-Carrier Effects of Strained pMOSFETs with SiGe Channel and Embedded SiGe Source/Drain Stressor |
| 2013 |
The Improvement of MOSFET Electric Characteristics through Strain Engineering by Refilled SiGe as Source and Drain |
| 2013 |
The Enhancement of MOSFET Electric Performance through Strain Engineering by Refilled SiGe as Source and Drain |
| 2013 |
Promising N-type FinFET Devices without or with Cobalt-Silicide Applied to the Gate |
| 2013 |
The Side Effects on N-type FinFET Devices |
| 2013 |
The Adjustment of Threshold Voltage on P-type FinFET Devices |
| 2013 |
The Side Effects and the Effects of Thickness of Source/Drain Fin on P-type FinFET Devices |
| 2013 |
Body Effect of SiGe and CESL Strained Nano-node NMOSFETs on (100) Silicon Substrate |
| 2013 |
Probing Moving Charge Distribution of Biaxial and CESL Strained PMOSFETs with Body Effect |
| 2013 |
High Quality of 0.18um CMOS 5.2GHz Cascode LNA for RFID Tag Applications |
| 2013 |
Si-Capping Thicknesses Impacting Compressive Strained MOSFETs with Temperature Effect |
| 2013 |
Electrical Performance of a-Si:H and Poly-Si TFTs with Heating Stress |
| 2013 |
Strained pMOSFETs with SiGe Channel and Embedded SiGe Source/Drain Stressor under Heating and Hot-Carrier Stresses |
| 2013 |
Trend of Subthreshold Swing with DPN Process for 28nm N/PMOSFETs |
| 2013 |
Channel-Length Modulation Effect for 28nm HK/MG PMOSFETs after Post Deposition Annealing Treatment |
| 2013 |
VT Adjustment for 28nm HfOx/ZrOx/HfOx Gate Dielectric of nMOSFET using DPN Process with Annealing Temperatures |
| 2013 |
奈米製程CESL壓縮應變與不同矽覆蓋層於pMOSFET之特性與熱載子效應分析 |
| 2013 |
Electrical Performance for 28nm HK/MG PMOSFETs by PDA or DPN Treatment with N2 Concentrations |
| 2013 |
Punch-Through Characteristics of High-k/Metal Gate NMOSFETs before and after PDA Treatment |
| 2013 |
Device Characterization for Stacked High-k/Metal Gate of NMOSFETs before and after PDA Process |
| 2013 |
Gate Leakage Characteristics for 28nm Gate-Last HK/MG NMOSFETs with PDA Process Treatment |
| 2013 |
Performance Study for 28nm High-k/Metal Gate of PMOSFETs with Gate-Last Process before and after PDA Treatment |
| 2013 |
Early Effect for 28nm HZH Gate-Stacked NMOSFETs after Post Deposition Annealing Process Treatment |
| 2013 |
Study of Gate Leakage for 28nm HfZrOx Gate Dielectric of PMOSFETs after Post Deposition Annealing Process |
| 2013 |
CLM Effect for 28nm Stacked HK/MG NMOSFETs after DPN Process with Different Nitrogen Concentration |
| 2013 |
Gate Leakage Effect for 28nm HK/MG NMOSFETs after DPN Treatment with Different Annealing Temperatures |
| 2013 |
Gate Leakage for 28nm High-k/Metal Gate NMOSFETs after DPN Treatment with Different Nitrogen Concentration |
| 2013 |
Kink Effect for 28nm HK/MG nMOSFETs after DPN Treatment with Different Annealing Temperatures |
| 2013 |
On the Degradation of Negative Bias Temperature Instability in a-Si:H TFTs |
| 2013 |
Junction and Punch-Through Leakage Mechanisms for 28nm High-k/ Metal Gate of PMOSFETs after PDA Process Treatment |
| 2013 |
The Influence of Nitrogen Concentrations and Annealing Temperatures on HfO2 nMOSFET Properties and PBTI Reliability |
| 2013 |
Electrical Characteristics and Hot-Carrier Effect of Stacked HK/MG nMOSFETs under DPN Treatment plus Annealing Temperatures |
| 2013 |
Gate Leakage for 28nm HfZrOx Gate Dielectric of PMOSFETs after Decoupled Plasma Nitridation Process with Annealing Temperatures |
| 2013 |
Early Effect for 28nm HfOx/ZrOy/HfOx Gate Dielectric of NMOSFETs after DPN Process with Different Nitrogen Concentration |
| 2013 |
Performance of Deep-nano Gate-last HK/MG nMOSFETs using DPN or PDA Process with Annealing Temperatures under Temperature Stress |
| 2013 |
Study of Gate Leakage Characteristics for 28nm HfZrOx PMOSFETs after DPN Process Treatment with Different Nitrogen Concentration |
| 2013 |
利用週期性介電質波導設計之環形共振分波器 |
| 2012 |
A Study of Characteristics of Halogen-Free Prevented Solder Materials |
| 2012 |
Promising Low Noise Amplifiers Using 90nm CMOSFET Devices |
| 2012 |
Threshold Voltages of MOSFET Devices Using 3-D FinFET Structure |
| 2012 |
Determination of Threshold Voltages of PMOSFET Devices using FinFET Structure |
| 2012 |
Threshold Voltages of NMOSFET Devices using FinFET Structure |
| 2012 |
Predicting Breakdown Characteristics of Nano-scaled HfO2 Gate Dielectric by Ramping Metrology |
| 2012 |
Fin-Thickness Effects on the Electric Performances of PMOSFET Devices Using FinFET Structure |
| 2012 |
Fin-Thickness Effects on n-Channel FinFET Devices with Cobalt Silicide as Gate |
| 2012 |
Strain Effects on Nano-NMOSFET Devices Following Refilled Source/ Drain Silicon Technology |
| 2012 |
Fin-Thickness Effects on p-Channel FinFET Devices with Cobalt Silicide as Gate |
| 2012 |
Strain Effects on Nano-NMOSFET Devices with Refilled S/D SiGe Process Technology |
| 2012 |
Strain Effects on Nano-PMOSFET Devices Fabricated with Refilled S/D SiGe Technology |
| 2012 |
Fin-Thickness Effects on p-Channel FinFET Devices |
| 2012 |
Temperature Effects on Drain Fringe Junction Capacitances of Strained pMOSFET Devices |
| 2012 |
Electrical Characteristics of Amorphous and Poly-Crystalline Thin-Film Transistors with Temperature Effect |
| 2012 |
Nano-regime Si-Capping Thicknesses Impacting Strained pMOSFET on <110> Silicon Substrate |
| 2012 |
Phenomenon of nMOSFETs with CESL stressor for different channel lengths |
| 2012 |
Comparison of NMOSFET and PMOSFET devices that combine CESL |
| 2012 |
0.18微米製程2.4GHz高輸出增益與低雜訊指數疊接式低雜訊放大器整合於RFID晶片 |
| 2012 |
0.18微米製程5.2/5.8GHz高增益與絕佳隔離之疊接式低雜訊放大器應用於射頻鑑別系統 |
| 2012 |
<100>矽基片奈米p型電晶體在單軸CESL應變下之汲極接面電位研究 |
| 2012 |
<100>矽基片奈米製程MOS電晶體在源/汲極回填矽壓縮應變下之汲極接面電位研究 |
| 2012 |
探討奈米製程CESL壓縮應變於<100>矽基片上p型電晶體之汲極接面電位 |
| 2012 |
CESL壓/拉應變對奈米等級<100>不同通道長度nMOSFETs之汲極接面電位研究 |
| 2012 |
重填矽源/汲極應變和CESL壓縮應變對奈米等級<100> nMOSFET之汲極接面電位研究 |
| 2012 |
奈米製程在單軸CESL拉伸應變於<100>晶圓表面上nMOSFET之汲極接面電位研究 |
| 2012 |
<110>矽基片45奈米電晶體在CESL應變與矽鍺回填源/汲極製程下之接面效能研究 |
| 2012 |
射頻鑑別系統中2.4GHz高增益/高隔離度串接式低雜訊放大器 |
| 2011 |
Distinguishing Junction Breakdown and Punch-through Characteristics for Uniaxial CESL Strained Nano-regime N/PMOSFETs on <100> Silicon Substrate |
| 2011 |
Promising Reliability of Refilled S/D Strained N/PMOSFET Devices Fabricated on <100> Substrate Linked to Junction Breakdown, and Punch-Through |
| 2011 |
Distinguishing Reliability of CESL Strained N/PMOSFET Devices Fabricated on <110> Substrate Correlated with Junction Breakdown, and Punch-Through |
| 2011 |
Distinguishing Characteristics of Refilled S/D Strained NMOSFET Devices Fabricated on <110> Substrate Associated with Junction Breakdown, and Punch-Through |
| 2011 |
Promising Characteristics of CESL Strained PMOSFET Devices Fabricated on <100> Substrate Correlated with Junction Breakdown, and Punch-Through |
| 2011 |
Distinguishing Repeatability of CESL Strained NMOSFET Devices Fabricated on <100> Substrate Associated with Junction Breakdown, and Punch-Through |
| 2011 |
Characteristics of SiGe Channel and Embedded SiGe S/D Strained PMOSFETs |
| 2011 |
Characteristics of the Hot-Carrier Effect on Strained nMOSFETs with Tensile and Compressive CESL Stressors |
| 2011 |
IMC Integrity for Sn96.7?Ag3.7 Polymer Core Solder Ball in BGA Package |
| 2011 |
Drop Test for Sn96.7?Ag3.7 Polymer Core Solder Ball in BGA Package |
| 2011 |
Reflow Influence for Sn96.7?Ag3.7 Polymer Core Solder Ball in BGA Package |
| 2011 |
Solder Stability for Pb?free HBGA Assembly with Oxygenous Reflow |
| 2011 |
Nickel Solder Ball Performance for Pb?free LFBGA Assembly under Oxygenous Reflow |
| 2011 |
Oxygenous Reflow Affecting Performance of Pb?free TFBGA Assembly |
| 2011 |
SOP Package Surface Discoloration after PCT Test |
| 2011 |
3.5 GHz to 10.0 GHz Mixers of High Gain and Good Isolations |
| 2011 |
Embedded SiGe Source/Drain and Temperature Degrading Junction Performance on <110> 45 nm MOSFETs |
| 2011 |
Deterioration of Junction Performance with Temperature Effect for 45 nm Si-Capping MOSFETs on <110> Silicon Substrate |
| 2011 |
Nano-Scale Si-Capping Thicknesses Impacting Junction Performance on <110> Silicon Substrate |
| 2011 |
Study of Temperature Effects of Mobility, Swing, and Early Voltages on Strained MOSFET Devices |
| 2011 |
Current Conduction Mechanisms of 0.65 nm Equivalent Oxide Thickness HfZrLaO Thin Films |
| 2011 |
Time Dependent Dielectric Breakdown (TDDB) Characteristics of Metal-Oxide-Semiconductor Capacitors with HfLaO and HfZrLaO Ultra-Thin Gate Dielectrics |
| 2011 |
Promoted Electrical Performance and Temperature Effects of Strained Short-Channel Transistors |
| 2011 |
6.0-10.1 GHz High-Gain Mixer |
| 2011 |
12GHz~ 18GHz High Gain Low Noise Amplifier |
| 2011 |
Variation of Channel Resistance for Nano-regime MOSFETs under Different Si Capping Thickness Depositing CESL Inducing Compressive Strain on <110> Si Wafer |
| 2011 |
Compressive/ Tensile Strained CESL Impacting Channel Resistance for Nano-regime <100> nMOSFETs |
| 2011 |
Channel Resistance for Nano-regime Biaxial Strained MOSFETs on <110> Silicon Substrate |
| 2011 |
A Study of Channel Resistance and Temperature Effect for <110> pMOSFET with Embedded SiGe Source/Drain Technology |
| 2011 |
Junction Leakage Performance with Temperature Effect for <110> 45 nm pMOSFETs Applied with Si-Capping and Refilled Source/Drain Process Technology |
| 2011 |
Variation of Channel Resistance for Nano-regime pMOSFETs under Refilled S/D SiGe Strain and Different Si Capping Thicknesses on <110> Si Wafer |
| 2011 |
Resistor Characteristics of Uniaxial CESL Strained Nano-regime nMOSFETs on <100> Silicon Wafer |
| 2011 |
Junction Leakage Efficiency for Nano-regime nMOSFETs between Si Capping Layers on <110> Wafer and Conventional <100> Wafer |
| 2011 |
Nano-regime pMOSFET Channel Resistance with Non-strained <100> and Strained <110> Wafers |
| 2011 |
A Study to Channel Resistance for <100> Strained PMOSFETs with Different Si Capping Layers |
| 2010 |
Miniaturization of Cascode Low-Noise Amplifier with 0.18um CMOS Process for 2.4GHz RFID Applications |
| 2010 |
Minimizing Size of Cascade Low-Noise Amplifier with 0.18um CMOS Process for 2.4GHz RFID Applications |
| 2010 |
Optimization of First-Stage cascode Low-Noise Amplifier with 0.18um CMOS Process for 2.4GHz RFID Applications |
| 2010 |
Contrivance and Proof of Ladder-Like Antenna for 2.46GHz RFID Applications |
| 2010 |
Design and Proof of Spiral-Like Antenna for 2.45GHz RFID Tag Applications |
| 2010 |
Clamp-Like Planar Antenna for 2.45GHz RFID Tag Applications |
| 2010 |
Mobility Enhancement on Nano-strained NMOSFET with Epitaxial Silicon Buffer Layers |
| 2010 |
CESL Deposition Promoting n/p MOSFETs under 45-nm-node Process Fabrication |
| 2010 |
ELFR Experiment Test Verifying Anomaly of Nano-DRAM Products in W-Plug Process |
| 2010 |
Study of Nano-regime Strained MOSFETs with Temperature Effect |
| 2010 |
C-V Analysis and Degradation of HC Stress near Vt Bias for CLC Poly-Si n-TFTs with Laser Annealing Powers |
| 2010 |
Temperature Dependence of Carrier Mobility Variation in Nanoscale Strained (110) MOSFETs |
| 2010 |
Characteristics of Uni-axial Strained Nano-scale nMOSFETs with CESL Process on <100> Silicon Substrate |
| 2010 |
A Study on N/P-Type Short / Long Channel Strained Devices on <100> Substrate with Various Thicknesses of Si-Cap Layer at Different Testing Temperatures |
| 2010 |
Performance of Nanoscale Strained PMOSFET Devices Measured at Different Temperatures |
| 2010 |
N/PMOSFET Characteristics Fabricated on <100> Silicon Substrate Using Strained Technology at Different temperatures |
| 2010 |
Characterization of Strained MOSFETs with Tensile and Compressive CESL Stressors |
| 2010 |
Degradation Mechanism for CLC Poly-Si n-TFTs under Low Vertical-Field HC Stress with Different Laser Annealing Powers |
| 2010 |
Promising 5.0-16.0 GHz CMOS-Based Oscillators With Tuned LC Tank |